FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1414-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 6000 9000 mA Transconductance gm VDS = 5V, IDS = 3600mA - 5000 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 300mA -0.5 -1.5 -3.0 V -5 - - V 39.5 40.5 - dBm 4.0 5.0 - dB - 3600 4500 mA - 23 - % Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Idsr IGS = -340µA VDS =10V, IDS = 0.6 IDSS (Typ.), f = 14.0 ~ 14.5 GHz, ZS = ZL= 50 ohm Power-added Efficiency ηadd Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IB Edition 1.3 August 2004 G.C.P.: Gain Compression Point 1 FLM1414-12F X, Ku-Band Internally Matched FET Total Power Dissipation (W) POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 60 45 30 15 VGS = 0V 6000 -0.5V 4000 -1.0V -1.5V 2000 -2.0V 50 100 150 2 4 8 6 10 Case Temperature (°C) Drain-Source Voltage OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER VDS=10V f = 14.25 GHz VDS=10V P1dB 40 Pin=37dBm 33dBm 38 36 29dBm 34 Pout Output Power (dBm) 40 Output Power (dBm) 0 200 38 30 36 20 34 ηadd 32 32 10 25dBm 14.0 14.1 14.2 14.3 14.4 25 14.5 27 29 31 33 Input Power (dBm) Frequency (GHz) 2 35 37 ηadd (%) 0 FLM1414-12F X, Ku-Band Internally Matched FET S11 S22 +j100 +j25 13.9 14.0 14.1 14.2 14.3 14.4 13.8 GHz +j10 0 10 25 14.0 14.5 14.6 14.7 100 50Ω 14.4 14.2 14.5 0.1 +j250 14.7 14.7 14.6 250 180° 1 14.5 14.5 14.4 14.3 14.2 14.4 13.8 GHz 14.3 14.7 -j10 -j250 3 4 5 14.0 13.8 GHz 13.8 GHz 13.9 -j100 -90° -j50 FREQUENCY (MHZ) 2 SCALE FOR |S21| 14.2 14.1 14.0 -j25 S21 S12 +90° 0.2 SCALE FOR |S12| +j50 S11 S-PARAMETERS VDS = 10V, IDS = 3600mA S21 S12 MAG ANG MAG ANG MAG ANG 13800 .376 -154.2 1.886 -80.3 .106 13900 .315 -159.6 1.917 -93.5 .110 14000 .248 -164.1 1.944 -105.8 .113 14100 .178 -165.7 1.941 -118.3 .115 14200 .104 -158.7 1.942 -131.7 14300 .051 -115.7 1.928 -143.3 14400 .091 -58.4 1.896 14500 .167 -46.4 1.894 14600 .247 -48.1 14700 .328 -52.7 S22 MAG ANG -87.7 .653 124.8 -101.2 .620 110.8 -114.7 .585 96.6 -128.1 .541 82.5 .114 -141.4 .506 68.3 .114 -153.8 .472 57.2 -156.3 .113 -165.0 .437 47.1 -167.5 .113 -176.2 .411 38.1 1.893 179.5 .115 172.8 .381 28.6 1.886 166.4 .116 160.3 .338 18.6 3 0° FLM1414-12F X, Ku-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.9±0.2 (0.508) 2-R 1.6±0.15 (0.063) 3 2.6±0.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.0±0.15 (0.669) 21.0±0.15 (0.827) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4