MB2S thru MB10S Case: MBS Glass Passivated Single Phase Bridge Rectifiers Reverse Voltage 200 to 1000V Forward Current 0.5 Amp Features y y y y y Glass passivated die construction Ideal for automatic insertion Plastic material used carries UL flammability recognition 94V-0 High surge current capability High case dielectric strength of 1500 VRMS Dimensions in inches and (millimeters) MB2S Maximum Repetitive Peak Reverse Voltage 200V MB4S 400V 280V 400V MB6S 600V 420V 600V MB8S 800V 560V 800V MB10S 1000V 700V 1000V SMSC Catalog Number Maximum RMS Voltage Maximum DC Blocking Voltage 140V 200V Mechanical Data Case: Molded plastic case Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Marked on Body Mounting Position: Any Weight: 0.078 oz., 0.22g Maximum Ratings and Thermal Characteristics (TA = 25℃ unless otherwise noted) Maximum average forward output rectified current Tc =40℃ IF(AV) 0.5 A IFSM 35 A i2t 5.0 A2s RθJA RθJC 85 20 ℃/W Tj, TSTG -55 to 150 ℃ Maximum Instantaneous Forward Voltage per leg VF 1.0V IFM =0.5A Maximum DC reverse current at rated DC blocking voltage per leg IR 5.0µA 500µA TA = 25℃ TA = 125℃ Typical Junction Capacitance per leg CJ 13pF 1.0MHZ, VR=4.0V Peak forward surge current single half sine-wave superimposed on rated load (JEDEC Method) Rating for fusing (t<8.3ms) Maximum thermal resistance per leg (1) Operating Junction and storage temperature range Electrical Characteristics (TA = 25℃ unless otherwise noted) Notes: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 0.47” (12 x 12mm) copper pads. Document Number: MB2S thru MB10S Jul.27, 2009 www.smsemi.com 1 MB2S thru MB10S 10 60 Hz Resistive or Inductive load IF, INSTANTANEOUS FORWARD CURRENT(A) I(AV), AVERAGE FORWARD CURRENT (A) 0.50 0.25 Tj = 25°C Pulse Width = 300µs 2% duty cycle 1.0 0.1 0.01 0 40 60 80 100 120 140 0.4 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per elem ent) 100 60 Tj = 25°c f = 1.0 Mhz Vsig = 50 mV p-p Single half-sine-Wave (JEDEC M ethod) 50 CJ , CAPACITANCE (pF) IFSM , PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Output Current Derating Curve 0.8 0.6 40 30 20 10 10 0 1 1 10 1 100 10 100 VR, REVERSEVOLTAGE (V) Fig. 4 Typ Junct ion Capacitance (per element) NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current IR, INSTANTANEOUS REVERSECURRENT(µ 100 Tj = 125°C 10 1.0 Tj = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENTOF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) Document Number :MB2S thru MB10S Jul. 27, 2009 www.smsemi.com 2