SMBJ12AON
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional*
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The SMBJ12AON is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMBJ12AON is ideally suited
for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other
industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
Specification Features:
• Working Peak Reverse Voltage Range − 12 V
• Peak Power − 600 Watts @ 1 ms at Maximum Clamp Voltage @
•
•
•
•
•
•
Cathode
Peak Pulse Current
ESD Rating of Class 3 (>16 KV) per Human Body Model
ESD Rating IEC 61000 −4.2 Level 4
Low Leakage < 5 mA at 12 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Package is Available
Anode
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
YWW
LEM
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
ABSOLUTE MAXIMUM RATINGS
Please See the Table on the Following Page
Y
WW
LEM
= Year
= Work Week
= Specific Device Code
ORDERING INFORMATION
Device {
Package
Shipping †
SMBJ12AONT3
SMB
2500/Tape & Reel
SMB
(Pb−Free)
2500/Tape & Reel
SMBJ12AONT3G
†The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 0
1
Publication Order Number:
SMBJ12AON/D
SMBJ12AON
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
Rating
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PD
3.0
W
RqJL
40
25
mW/°C
°C/W
RqJA
0.55
4.4
226
W
mW/°C
°C/W
TJ, Tstg
−65 to +150
°C
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
Operating and Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive at maximum IPPM and VCM, see electrical characteristics.
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 30 A)
Symbol
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
IR
VBR
IF
Parameter
IPP
VRWM
I
VC VBR VRWM
Working Peak Reverse Voltage
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
Absolute Maximum Clamping Voltage
Conditions
Symbol
Min
Typ
Max
Unit
IT = 1 mA
VZ
13.2
13.75
14.3
V
VRWM = 12 V
IR
5.0
mA
IPP = 17.5 A
(Per Figures 1 & 2)
VC
15.6
V
IPPM = 30.2 A
(Per Figure 3, Note 6)
VCM
19.9
V
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, IPPM.
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2
SMBJ12AON
100
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 1.6 ms
80
70
60
HALF VALUE IRSM/2 @ 6.5 ms
50
40
30
tP
20
10
0
tr
90
% OF PEAK PULSE CURRENT
% OF PEAK PULSE CURRENT
90
100
PEAK VALUE IRSM @ 1.6 ms
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
6.5
0
20
40
t, TIME (ms)
Figure 1. 1.6 × 6.5 ms Pulse Waveform
100
VALUE (%)
PEAK VALUE − IPP
I
HALF VALUE − PP
2
50
tP
0
0
1
2
80
3
Figure 2. 8 × 20 ms Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
tr≤ 10 ms
60
t, TIME (ms)
140
120
100
80
60
40
20
0
4
0
25
50
75
100
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. 10 × 1000 ms Pulse Waveform
Figure 4. Pulse Derating Curve
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
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3
VL
125
150
SMBJ12AON
APPLICATION NOTES
RESPONSE TIME
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
V
DUTY CYCLE DERATING
If the duty cycle increases, the peak power must be
reduced as indicated by the curves of Figure 7. Average
power must be derated as the lead or ambient temperature
rises above 25°C. The average power derating curve
normally given on data sheets may be normalized and used
for this purpose.
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
DERATING FACTOR
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 ms
0.02
10 ms
0.01
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
Figure 7. Typical Derating Factor for Duty Cycle
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4
SMBJ12AON
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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5
SMBJ12AON
PACKAGE DIMENSIONS
SMB
DO−214AA
CASE 403A−03
ISSUE D
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
C
K
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
J
SOLDERING FOOTPRINT*
0.089
2.261
0.108
2.743
inches
mm
0.085
2.159
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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Phone: 81−3−5773−3850
Email: [email protected]
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For additional information, please contact your
local Sales Representative.
SMBJ12AON/D