Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 1/8 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB110P10E3 BVDSS -100V ID @ VGS=-10V -23A 80mΩ 93mΩ RDSON(TYP) @ VGS=-10V, ID=-11A RDSON(TYP) @ VGS=-4.5V, ID=-8A Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-220 MTB110P10E3 G：Gate D：Drain S：Source G D S Ordering Information Device MTB110P10E3-0-UB-X Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB110P10E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=-10V Continuous Drain Current @ TC=100C, VGS=-10V Pulsed Drain Current Continuous Drain Current @ TA=25C , VGS=10V Continuous Drain Current @ TA=70C , VGS=10V Avalanche Current Avalanche Energy @ L=7.1mH, ID=-11A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS -100 ±20 -23 -16 -76 -3.0 -2.4 -11 430 14 140 70 2 1.3 -55~+175 ID (Note 3) (Note 2) (Note 2) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) IDM IDSM IAS EAS EAR PD PDSM Tj, Tstg Unit V A mJ W W C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c (Note 1) Value 1.1 62 Unit C/W C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. . 3 Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial T J=25°C. 4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTB110P10E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 3/8 Characteristics (TC=25C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions -100 -1.0 - -0.09 19 80 93 -2.5 ±100 -1 -25 110 125 V V/°C V S nA VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS = VGS, ID=-250μA VDS =-10V, ID=-11A VGS=±20V VDS =-100V, VGS =0V VDS =-80V, VGS =0V, Tj=125C VGS =-10V, ID=-11A VGS =-4.5V, ID=-8A 30.6 3.8 9.3 9.0 18.2 69.8 73.2 1726 104 71 11 - -0.84 25.3 33.4 -23 -76 -1.3 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC ID=-11A, VDS=-80V, VGS=-10V ns VDS=-50V, ID=-11A, VGS=-10V, RG=5.1Ω pF VGS=0V, VDS=-25V, f=1MHz Ω f=1MHz A V ns nC IS=-11A, VGS=0V IF=-11A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width 300μs, Duty Cycle2% MTB110P10E3 CYStek Product Specification Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 -10V -9V -8V -7V -6V -5V 40 30 -BVDSS, Normalized Drain-Source Breakdown Voltage -ID, Drain Current(A) 50 VGS=-4V VGS=-3.5V 20 VGS=-3V 10 VGS=-2.5V 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 -VSD, Source-Drain Voltage(V) VGS=-2V VGS=-2.5V 100 VGS=-3V VGS=-4.5V VGS=-10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.01 0.1 1 10 -ID, Drain Current(A) 100 0 4 8 12 16 -IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 500 450 R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-11A 400 350 300 250 200 150 100 50 2 VGS=-10V, ID=-11A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 80mΩ typ. 0 0 0 MTB110P10E3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VG S(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 Coss 100 Crss 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 1 VDS=-10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=-20V 6 VDS=-80V 4 VDS=-50V 2 ID=-11A 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 5 10 15 20 25 30 Total Gate Charge---Qg(nC) 35 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 100 -ID, Maximum Drain Current(A) 1000 -ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 10μs RDS(ON) Limit 100μs 10 1ms TC=25°C, Tj=175°C, VGS=10V,RθJC=1.1°C/W single pulse 1 10ms 100ms DC 20 15 10 5 VGS=10V, RθJC=1.1°C/W 0 0.1 0.1 MTB110P10E3 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 6/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 50 4500 VDS=-10V Peak Transient Power (W) 45 -ID, Drain Current (A) 40 35 30 25 20 15 3500 3000 2500 2000 1500 10 1000 5 500 0 0 2 4 6 -VGS, Gate-Source Voltage(V) 8 10 TJ(MAX) =175°C TC=25°C θ JC=1.1°C/W 4000 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.Rθ JC (t)=r(t)*RθJC 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=1.1 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1.E-05 MTB110P10E3 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB110P10E3 CYStek Product Specification Spec. No. : C968E3 Issued Date : 2014.08.04 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension Marking: 4 Device Name B110 P10 Date Code □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.400 4.600 2.250 2.550 0.710 0.910 1.170 1.370 0.330 0.650 1.200 1.400 10.250 9.910 9.750 8.950 12.650 12.950 DIM A A1 b b1 c c1 D E E1 Inches Min. Max. 0.173 0.181 0.089 0.100 0.028 0.036 0.046 0.054 0.013 0.026 0.047 0.055 0.404 0.390 0.384 0.352 0.510 0.498 DIM e e1 F H h L L1 V Φ Millimeters Min. Max. 2.540* 4.980 5.180 2.650 2.950 8.100 7.900 0.000 0.300 12.900 13.400 2.850 3.250 7/500 REF 3.400 3.800 Inches Min. Max. 0.100* 0.196 0.204 0.104 0.116 0.319 0.311 0.000 0.012 0.508 0.528 0.112 0.128 0.295 REF 0.134 0.150 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB110P10E3 CYStek Product Specification