Vishay BAT41-TAP Small signal schottky diode Datasheet

BAT41
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage
and high breakdown voltage. This device e2
is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges
• This diode is also available in a MiniMELF case
with type designation LL41
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Mechanical Data
Case: DO35 Glass Case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT41
Ordering code
Type Marking
Remarks
BAT41-TR or BAT41-TAP
BAT41
Tape and Reel/Ammopack
/
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Tamb = 25 °C
Repetitive peak forward current
tp < 1 s, δ < 0.5, Tamb = 25 °C
Symbol
Value
Unit
VRRM
100
V
IF
IFRM
100
1)
mA
350
1)
mA
1)
mA
mW
Surge forward current
tp = 10 ms, Tamb 25 °C
IFSM
750
Power dissipation
Tamb = 65 °C
Ptot
2001)
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 85659
Rev. 1.5, 26-Feb-07
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BAT41
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage2)
2)
Leakage current
Forward voltage2)
Diode capacitance
2)
Test condition
IR = 100 µA
Symbol
Min
Typ.
V(BR)
100
110
Max
Unit
V
VR = 50 V, Tj = 25 °C
IR
100
nA
VR = 50 V, Tj = 100 °C
IR
20
µA
IF = 1 mA
VF
IF = 200 mA
VF
VR = 1 V, f = 1 MHz
CD
400
450
mV
1000
mV
2
pF
Pulse test, tp = 300 µs
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100000
IR - Reverse Leakage Current (nA)
Ptot- Power Dissipation (mW)
250
200
150
100
50
Tj = 125 °C
10000
20225
50
100
Tamb - Ambient Temperature (°C)
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2
50 °C
100
25 °C
10
1
150
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
75 °C
1000
0
0
100 °C
20226
0
10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
Document Number 85659
Rev. 1.5, 26-Feb-07
BAT41
Vishay Semiconductors
1000
5.0
CD - Diode Capacitance (pF)
I F - Forward Current (mA)
4.5
100
T j = 125 ° C
10
1
- 40 °C
0.1
25 °C
0.01
0
200
18641
400
600
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
800
1000
0
1200
VF - Forward Voltage (mV)
20227
Figure 3. Typical Forward Characteristics
5
10
15
20
25
30
35
40
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO35
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85659
Rev. 1.5, 26-Feb-07
www.vishay.com
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BAT41
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85659
Rev. 1.5, 26-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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