SavantIC Semiconductor Product Specification BDX33/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX34/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BDX33 VCBO VCEO Collector-base voltage Collector-emitter voltage BDX33A BDX33B Open emitter Emitter-base voltage IC 60 80 BDX33C 100 BDX33 45 BDX33A BDX33B UNIT 45 Open base 60 80 V V 100 BDX33C VEBO VALUE Open collector 5 V Collector current-DC 10 A ICM Collector current-Pulse 15 A IB Base current 0.25 A PC Collector power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.78 /W SavantIC Semiconductor Product Specification BDX33/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX33 VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current MAX V BDX33B 80 BDX33C 100 BDX33/33A IC=4A ,IB=8mA BDX33B/33C IC=3A ,IB=6mA BDX33/33A IC=4A ; VCE=3V BDX33B/33C IC=3A ; VCE=3V BDX33 VCB=45V, IE=0 BDX33A VCB=60V, IE=0 BDX33B VCB=80V, IE=0 BDX33C VCB=100V, IE=0 BDX33 VCE=22V, IB=0 BDX33A VCE=30V, IB=0 BDX33B VCE=40V, IB=0 BDX33C VCE=50V, IB=0 VEB=5V; IC=0 BDX33/33A UNIT 60 IC=0.1A, IB=0 Emitter cut-off current 2.5 V 2.5 V 0.2 mA 0.5 mA 5 mA 4.0 V IC=4A ; VCE=3V DC current gain Forward diode voltage TYP. 45 BDX33A 750 BDX33B/33C VF MIN IC=3A ; VCE=3V IF=8A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX33/A/B/C