Thyristor SMD Type SCR Thyristor MCK22-8 1.70 0.1 ■ Features ● Repetitive peak off-state voltages :600V ● R.M.S On-State Current ( IT(RMS)= 1.5 A ) 0.42 0.1 ● Low On-State Voltage (1.2V(Typ.)@ITM) 0.46 0.1 3. Gate ▼ ○ ○ 2. Anode ○ 1. Cathode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Peak Repetitive Forward Voltages VDRM 600 Reverse Peak Gate Voltage VRGM 5 Unit V IT(AV) 1 IT(RMS) 1.5 ITSM 15 2 It 0.9 A 2s Forward Peak Gate Current IFGM 0.2 A Reverse Peak Gate Voltage VRGM 5 V Peak Gate Power @ Pulse Width ≤ 1us PGM 0.5 PG(AV) 0.1 Thermal Resistance Junction to Ambient RthJA 125 Thermal Resistance Junction to Case RthJC 15 Average On-State Current @ Tc =99 °C RMS on-state Current Surge On-State Current @ 1/2 Cycle, 60Hz Circuit Fusing Considerations @ t=8.3ms Average Gate Power @ t=8.3ms junction Temperature Storage Temperature range TJ 125 Tstg -40 to 150 A W K/W ℃ ■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.) Parameter Non-Trigger Gate Voltage On-state Voltage Symbol (Note.1) (Note.1) Gate Trigger Voltage Repetitive Peak Off-State Current Test Conditions Min Typ. Max VGD VAK = 12 V, RL=100 Ω ,Tc = 125 °C VTM IT=3A 1.7 VD=7V, RL=100Ω,Tc = 25 °C 0.8 Tc = -40 °C 1.2 VAK = VDRM or VRRM, RGK = 1000 Ω,Tc = 25 °C 10 VGT IDRM Gate Trigger Current IGT Holding Current IH 0.2 Tc = 125 °C 200 VD=6 V, RL=100Ω, Tc = 25 °C 200 Tc = -40 °C VAK = 12 V, Gate Open Unit 5 Tc = -40 °C 10 dv /dt VGM = 0.67VDRM, TJ = 125 °C Exponential waveform , RGK = 1000 Ω Critical Rate of Rise On-State Current di/dt ITM = 3A, Ig = 10mA uA 500 Tc = 25 °C Critical Rate of rise of off-state Voltage V 200 mA V/us 50 A/us Note.1:Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% www.kexin.com.cn 1 Thyristor SMD Type SCR Thyristor MCK22-8 ■ Typical Characterisitics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ oC] Fig 1. Gate Characteristics 1 10 PGM (0.5W) PG(AV) (0.1W) 0 10 IGM (0.2A) Gate Voltage [V] VGM (5V) 25 ℃ VGD(0.2V) -1 10 -1 0 10 1 10 2 10 140 120 θ = 180 80 60 π 360° 20 θ 0 0.0 10 : Conduction Angle 0.2 0.4 Transient Thermal Impedance Instantaneous On-State Current [A] 1 10 o TJ = 125 C 0 10 o TJ = 25 C -1 10 1 10 0 0.4 0.8 1.2 1.6 2.0 10 2.4 -2 10 -1 10 Instantaneous On-State Voltage [V] 1 10 2 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 2.0 1.2 1.5 0.9 o o IGT (t C) IGT (25 C) 1.5 1.0 0.5 0.6 0.3 -50 0 10 Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature VGT (25 oC) 1.2 10 -2 o 1.0 2 2 10 VGT (t C) 0.8 Fig 4. Thermal Response Fig 3. Typical Forward Voltage 0 50 100 o Junction Temperature [ C] 2 0.6 Average On-State Current [A] Gate Current [mA] 10 2π θ 40 3 10 o 100 www.kexin.com.cn 150 0.0 -50 0 50 100 o Junction Temperature [ C] 150 Thyristor SMD Type SCR Thyristor MCK22-8 ■ Typical Characterisitics Fig 7. Typical Holding Current Fig 8. Power Dissipation 2.0 Max. Average Power Dissipation [W] 10 9 8 7 Holding Current [mA] 6 5 4 3 2 1 -40 -20 0 20 40 60 80 Junction Temperature [℃] 100 120 140 1.8 1.6 θ = 30 1.4 o θ = 60 o θ = 90 o θ = 120 o θ = 180 o 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Average On-State Current [A] www.kexin.com.cn 3