Chenmko CHM3055LXPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHM3055LXPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 3.7 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-62/SOT-89
FEATURE
* Small package. (SC-62/SOT-89 )
* High density cell design for extremely low RDS(ON).
* Rugged and reliable.
1.6MAX.
4.6MAX.
0.4+0.05
2.5+0.1
0.8MIN.
CONSTRUCTION
* N-Channel Enhancement
+0.08
0.45-0.05
+0.08
0.40-0.05
+0.08
0.40-0.05
1.50+0.1
1.50+0.1
1
1 Gate
D (3)
CIRCUIT
4.6MAX.
1.7MAX.
2
3
2 Drain
3 Source
(1) G
Dimensions in millimeters
S (2)
Absolute Maximum Ratings
Symbol
SC-62/SOT-89
TA = 25°C unless otherwise noted
Parameter
CHM3055LXPT
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
3.7
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
25
3000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
42
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-01
RATING CHARACTERISTIC CURVES ( CHM3055LXPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
2
V
(Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
g FS
V
Forward Transconductance
VDS = VGS, ID = 250 µA
1
VGS=10V, ID=3.9A
68
100
VGS=4.5V, ID=3.7A
90
120
3
VDS =5V, ID = 3.7A
mΩ
S
6
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q
Gate-Drain Charge
gd
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
13
VDS=48V, ID=3.7A
17
nC
2.6
VGS=10V
3.2
V DD= 25V
15
20
I D = 1.0A , VGS = 10 V
18
20
RGEN= 6 Ω
40
50
16
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 1.5A , VGS = 0 V
(Note 1)
(Note 2)
2.5
A
1.5
V
RATING CHARACTERISTIC CURVES ( CHM3055LXPT )
Typical Electrical Characteristics
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
25
10
V G S =1 0 V
I D , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
8.0V
6.0V
20
VG S =5 . 0 V
15
10
VG S =4 . 0 V
5
VG S =3 . 0 V
8
TJ=-55°C
6
4
TJ=125°C
2
TJ=25°C
0
0
0
3.0
2.0
1.0
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
0
R DS(on) , NORMALIZED
6
4
2
0
4
8
Qg , TOTAL GATE CHARGE (nC)
12
16
Figure 5. Gate Threshold Variation with
Temperature
VDS=VGS
ID=250uA
1.2
THRESHOLD VOLTAGE
4.0
5.0
6.0
VGS=10V
ID=3.9A
1.9
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
VGS , GATE TO SOURCE VOLTAGE (V)
VDS=48V
ID=3.7A
0
Vth , NORMALIZED GATE-SOURCE
3.0
Figure 4. On-Resistance Variation with
Temperature
2.2
8
1.3
2.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
1.0
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
TJ , JUNCTION T EMPERATURE (°C)
150
200
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