DISCRETE SEMICONDUCTORS DATA SHEET BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL CONDITIONS MIN. DESCRIPTION 1 gate 2 drain 3 source 4 drain − 300 V ID DC drain current − 300 mA Ptot total power dissipation up to Tamb = 25 °C − 1.5 W ±VGSO gate-source voltage open drain − 20 V RDS(on) drain-source on-resistance ID = 250 mA; VGS = 10 V − 8 Ω VGS(off) gate-source cut-off voltage ID = 1 mA; VDS = VGS 0.8 2 V d 4 handbook, halfpage g 1 Top view 2 s 3 MAM054 Marking code BSP130. Fig.1 Simplified outline and symbol. April 1995 UNIT drain-source voltage PINNING - SOT223 PIN MAX. VDS DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PARAMETER 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS drain-source voltage ±VGSO gate-source voltage ID DC drain current IDM peak drain current Ptot total power dissipation Tstg Tj CONDITIONS MIN. open drain MAX. UNIT − 300 V − 20 V − 300 mA − 1.4 A − 1.5 W storage temperature −65 +150 °C junction temperature − 150 °C up to Tamb = 25 °C; note 1 THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient; note 1 83.3 K/W Note 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 300 − − V ±IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 100 nA VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS 0.8 − 2 V RDS(on) drain-source on-resistance ID = 20 mA; VGS = 2.4 V − 7.9 14 Ω ID = 250 mA; VGS = 10 V − 6.7 8 Ω IDSS drain-source leakage current VDS = 240 V; VGS = 0 − − 100 nA Yfs transfer admittance ID = 250 mA; VDS = 25 V 200 380 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 57 90 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 15 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 2.6 15 pF Switching times (see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V − 2.5 10 ns toff turn-off time ID = 250 mA; VDD = 50 V; VGS = 10 to 0 V − 17 30 ns April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor VDD = 50 V handbook, halfpage BSP130 handbook, halfpage 90 % INPUT 10 % 90 % 10 V OUTPUT ID 0V 50 Ω 10 % MBB691 ton toff MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. MRC218 2 MRC214 150 handbook, halfpage handbook, halfpage Ptot C (pF) (W) 1.5 100 1 Ciss 50 0.5 Coss Crss 0 0 0 50 100 150 Tj (°C) 200 0 5 10 15 25 20 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.4 Power derating curve. April 1995 Fig.5 4 Capacitance as a function of drain-source voltage, typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MRC217 1.2 handbook, halfpage P = 1.5 W ID (A) 5V 4V 3.5 V 0.8 MRC223 1.2 handbook, halfpage VGS = 10 V ID (A) BSP130 0.8 3V 0.4 0.4 2.5 V 2V 0 0 0 4 8 VDS (V) 12 0 Tj = 25 °C. 4 8 VGS (V) 12 VDS = 10 V; Tj = 25 °C. Fig.6 Typical output characteristics. Fig.7 Typical transfer characteristics. MRC219 30 MRC220 25 handbook, halfpage handbook, halfpage RDSon VGS = 2 V RDSon (Ω) 2.5 V 3 V 3.5 V (Ω) 20 4V 20 15 5V 10 10 10 V 5 0 10−2 10−1 1 ID (A) 0 10 0 April 1995 4 6 8 10 VGS (V) VDS = 100 mV; Tj = 25 °C. Tj = 25 °C. Fig.8 2 Drain-source on-resistance as a function of drain current, typical values. Fig.9 5 Drain-source on-resistance as a function of gate-source voltage, typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 MRC221 102 handbook, full pagewidth δ= 0.75 0.5 Rth j-a (K/W) 0.2 10 0.1 0.05 0.02 0.01 1 δ= P tp T 0 t tp T 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time. MRC222 10 handbook, halfpage ID (A) 1 tp = 10 µs 100 µs 1 ms 10 ms (1) 10−1 100 ms tp δ= T P 1s DC 10−2 t tp T 10−3 10 1 102 VDS (V) 103 δ = 0.01; Tamb = 25 °C. (1) RDS(on) limitation. Fig.11 SOAR curve. April 1995 6 103 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor MRC215 2.5 BSP130 MRC216 1.25 handbook, halfpage handbook, halfpage k k (1) 2 1 (2) 1.5 0.75 1 0.5 0.5 0.25 0 −50 0 50 100 Tj (°C) 0 −50 150 R DS(on) at T j k = ----------------------------------------R DS(on) at 25 °C 50 100 Tj (°C) 150 V GS(th) at T j k = ------------------------------------------ . V GS(th) at 25 °C Typical RDS(on); (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V. Typical VGS(th) at 1 mA. Fig.13 Temperature coefficient of gate-source threshold voltage. Fig.12 Temperature coefficient of drain-source on-resistance. April 1995 0 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 April 1995 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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