DS16149,DS16179,DS36149,DS36179 DS16149 DS36149 DS16179 DS36179 Hex MOS Drivers Literature Number: SNOSBR3A DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers General Description Features The DS16149/DS36149 and DS16179/DS36179 are Hex MOS drivers with outputs designed to drive large capacitive loads up to 500 pF associated with MOS memory systems. PNP input transistors are employed to reduce input currents allowing the large fan-out to these drivers needed in memory systems. The circuit has Schottky-clamped transistor logic for minimum propagation delay, and a disable control that places the outputs in the logic ‘‘1’’ state (see truth table). This is especially useful in MOS RAM applications where a set of address lines has to be in the logic ‘’1’’ state during refresh. The DS16149/DS36149 has a 15 X resistor in series with the outputs to dampen transients caused by the fast-switching output. The DS16179/DS36179 has a direct low impedance output for use with or without an external resistor. Y e et Y O bs ol Schematic Diagram Y High speed capabilities # Typ 9 ns driving 50 pF # Typ 29 ns driving 500 pF Built-in 15 X damping resistor (DS16149/DS36149) Same pin-out as DM8096 and DM74366 C1995 National Semiconductor Corporation TL/F/7553 TL/F/7553 – 1 RRD-B30M105/Printed in U. S. A. DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers February 1986 Absolute Maximum Ratings (Note 1) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage Logical ‘‘1’’ Input Voltage Logical ‘‘0’’ Input Voltage Supply Voltage (VCC) Temperature (TA) DS16149, DS16179 DS36149, DS36179 7.0V 7.0V Min 4.5 Max 5.5 Units V b 55 a 125 a 70 §C §C 0 b 1.5V b 65§ C to a 150§ C Storage Temperature Range Maximum Power Dissipation* at 25§ C Cavity Package 1371 mW Molded Package 1280 mW Lead Temperature (Soldering 10 seconds) 300§ C *Derate cavity package 9.1 mW/§ C above 25§ C; derate molded package 10.2 m/W§ C above 25§ C. DC Electrical Characteristics (Notes 2 and 3) Parameter Conditions Logical ‘‘1’’ Input Voltage VIN(0) Logical ‘‘0’’ Input Voltage IIN(1) Logical ‘‘1’’ Input Current VCC e 5.5V, VIN e 5.5V IIN(0) Logical ‘‘0’’ Input Current VCC e 5.5V, VIN e 0.5V VCLAMP Input Clamp Voltage VCC e 4.5V, IIN e b18 mA VOH Logical ‘‘1’’ Output Voltage (No Load) VCC e 4.5V, IOH e b10 mA Logical ‘‘0’’ Output Voltage (No Load) VCC e 4.5V, IOL e 10 mA VOH Logical ‘‘0’’ Output Voltage (With Load) VCC e 4.5V, IOL e 20 mA Logical ‘‘1’’ Drive Current IOD Logical ‘‘0’’ Drive Current ICC Power Supply Current Units V V 0.1 40 mA b 50 b 250 mA et Logical ‘‘1’’ Output Voltage (With Load) IID Max 0.8 VCC e 4.5V, IOH e b1.0 mA VOL Typ 2.0 b 0.75 O V 3.4 4.3 V DS36149/DS36179 3.5 4.3 V DS16149/DS16179 0.25 0.4 V DS36149/DS36179 0.25 0.35 V DS16149 2.4 3.5 V DS16179 2.5 3.5 V DS36149 2.6 3.5 V DS36179 2.7 3.5 V DS16149 0.6 1.1 V DS16179 0.4 0.5 V DS36149 0.6 1.0 V DS36179 0.4 0.5 VCC e 4.5V, VOUT e 0V, (Note 4) VCC e 4.5V, VOUT e 4.5V, (Note 4) VCC e 5.5V b 1.2 DS16149/DS16179 bs ol VOL Min e Symbol VIN(1) Disable Inputs e 0V All Other Inputs e 3V All Inputs e 0V V b 250 mA 150 mA 33 14 60 mA 20 mA Switching Characteristics (VCC e 5V, TA e 25§ C) (Note 4) Symbol tS g tS ’ tF Parameter Storage Delay Negative Edge Storage Delay Positive Edge Fall Time Conditions (Figure 1 ) (Figure 1 ) (Figure 1 ) 2 Typ Max Units CL e 50 pF Min 4.5 7 ns CL e 500 pF 7.5 12 ns CL e 50 pF 5 8 ns CL e 500 pF 8 13 ns CL e 50 pF 5 8 ns CL e 500 pF 22 35 ns Switching Characteristics (VCC e 5V, TA e 25§ C) (Note 4) (Continued) Symbol tR Parameter Rise Time Conditions (Figure 1 ) Typ Max Units CL e 50 pF Min 6 9 ns CL e 500 pF 26 35 ns tLH Delay from Disable Input to Logical ‘‘1’’ RL e 2 kX to Gnd, CL e 50 pF, (Figure 2 ) 15 22 ns tHL Delay from Disable Input to Logical ‘‘0’’ RL e 2 kX to VCC, CL e 50 pF, (Figure 3 ) 11 18 ns Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Unless otherwise specified min/max limits apply across the b 55§ C to a 125§ C temperature range for the DS16149 and DS16179 and across the 0§ C to a 70§ C range for the DS36149 and DS36179. All typical values are for TA e 25§ C and VCC e 5V. Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown as max or min on absolute value basis. Note 4: When measuring output drive current and switching response for the DS16179 and DS36179 a 15 X resistor should be placed in series with each output. This resistor is internal to the DS16149/DS36149 and need not be added. Truth Table e Connection Diagram Dual In-Line Package Disable Input Input 0 0 0 1 1 Output DIS2 et DIS 1 0 0 1 0 1 0 1 X X X 1 0 1 1 1 bs ol X e Don’t care TL/F/7553 – 2 Top View Order Number DS16149J, DS36149J, DS16179J, DS36179J, DS36149N or DS36179N See NS Package Number J16A or N16A AC Test Circuits and Switching Time Waveforms O tS g , tS g , tR, tF TL/F/7553 – 3 FIGURE 1 3 AC Test Circuits and Switching Time Waveforms (Continued) TL/F/7553 – 4 et e FIGURE 2 TL/F/7553 – 5 FIGURE 3 *Internal on DS16149 and DS36149 bs ol Note 1: The pulse generator has the following characteristics: ZOUT e 50 X and PRR s 1 MHz. Rise and fall times between 10% and 90% points s 5 ns. Note 2: CL includes probe and jig capacitance. O Typical Applications TL/F/7553 – 6 4 e Physical Dimensions inches (millimeters) O bs ol et Ceramic Dual-In-Line Package (J) Order Number DS16149J, DS36149J DS16179J or DS36179J NS Package Number J16A 5 e et Molded Dual-In-Line Package (N) Order Number DS36149N, DS36149N NS Package Number N16A bs ol DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers Physical Dimensions inches (millimeters) (Continued) LIFE SUPPORT POLICY O NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 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