AO4914A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features Q1 The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4914A is Pb-free (meets ROHS & Sony 259 specifications). AO4914AL is a Green Product ordering option. AO4914A and AO4914AL are electrically identical. S1/A G1 S2 G2 1 2 3 4 D1/K D1/K D2 D2 8 7 6 5 SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 Q1 S1 VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage PD TJ, TSTG B TA=25°C A TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Q2 G2 S2 Max Q1 30 Max Q2 30 Units V ±20 ±20 V 8.5 6.6 8.5 6.6 A 30 30 2 2 1.28 -55 to 150 1.28 -55 to 150 Maximum Schottky 30 W °C Units V 3 TA=25°C TA=70°C Pulsed Diode Forward Current Power Dissipation ID IDM Symbol VDS Continuous Forward A Current A G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Continuous Drain A Current D2 K SOIC-8 Gate-Source Voltage Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 18mΩ <18mΩ (VGS = 10V) RDS(ON) < 28mΩ <28mΩ (VGS = 4.5V) IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C AO4914A Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Parameter: Thermal Characteristics MOSFET Q2 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Thermal Characteristics Schottky Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units Typ 48 74 35 Max 62.5 110 40 Units 47.5 71 32 62.5 110 40 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. °C/W °C/W °C/W AO4914A Q1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Conditions Min ID=250µA, VGS=0V VR=30V VR=30V, TJ=125°C 0.005 0.05 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A TJ=125°C VGS=4.5V, ID=6A Forward Transconductance VSD Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.2 10 mA 12 20 100 nA 1.7 3 V A 14.8 18 20.5 25 20.6 28 mΩ 0.6 V 3.5 A 1250 pF VDS=5V, ID=8.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss V VR=30V, TJ=150°C gFS Max Units 30 IGSS IS Typ 23 0.46 955 VGS=0V, VDS=15V, f=1MHz S 175 pF 112 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω mΩ pF 0.85 Ω 17 23 nC 9 11.2 nC 0.5 3.4 nC 4.7 nC 5 6.5 6 7.5 ns ns 19 25 ns ns tf Turn-Off Fall Time 4.5 6 trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 20 24 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.5 12 nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4914A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 10V 30 4.5V 4V 20 VDS=5V 25 3.5V ID(A) ID (A) 30 125°C 15 10 VGS=3V 10 20 5 25°C 0 0 0 1 2 3 4 1.5 5 2 24 3.5 4 4.5 1.6 22 Normalized On-Resistance VGS=4.5V 20 RDS(ON) (mΩ) 3 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 16 14 VGS=10V 12 10 0 5 10 15 20 25 VGS=4.5V 1.4 VGS=10V 1.2 ID=8.5A 1 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 40 35 1.0E-01 IS (A) 125°C 25 125°C 1.0E+00 ID=8.5A 30 RDS(ON) (mΩ) 2.5 20 1.0E-02 25°C 1.0E-03 15 10 FET+SCHOTTKY 1.0E-04 25°C 1.0E-05 5 0 2 4 6 8 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) 1.0 AO4914A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 VDS=15V ID=8.5A Capacitance (pF) VGS (Volts) 8 6 4 1200 1000 800 600 Coss FET+SCHOTTKY 400 2 200 0 0 5 10 15 f=1MHz VGS=0V Ciss 1400 Crss 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 100.0 30 50 TJ(Max)=150°C, TA=25°C 10µs RDS(ON) limited 1ms 100µs ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 40 Power (W) 10.0 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 20 1s 10 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4914A Q2 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V TJ=55°C Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance 20.6 28 VDS=5V, ID=8.5A 23 DYNAMIC PARAMETERS Ciss Input Capacitance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge A VGS=4.5V, ID=6A Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current Gate resistance V 27 Forward Transconductance Rg 3 18 VSD Reverse Transfer Capacitance nA 22 TJ=125°C gFS Crss 1.7 100 14.8 VGS=10V, ID=8.5A 0.75 955 VGS=0V, VDS=15V, f=1MHz µA 5 VGS(th) Output Capacitance V 1 ID(ON) Coss Max Units 30 VDS=24V, VGS=0V IDSS IS Typ mΩ mΩ S 1 V 3 A 1250 pF 145 pF 112 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A pF 0.5 0.85 Ω 17 24 nC 9 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 tD(on) Turn-On DelayTime 5 6.5 tr Turn-On Rise Time 6 7.5 ns tD(off) Turn-Off DelayTime 19 25 ns tf Turn-Off Fall Time 4.5 6 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.7 21 ns Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 3.4 nC nC ns 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4914A Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 32 10V 25 20 24 3.5V ID(A) ID (A) VDS=5V 28 4.5V 15 10 20 125°C 16 12 VGS=3V 13.4 8 5 22 4 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 26 30.76 3.5 2.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 24 Normalized On-Resistance VGS=4.5V VGS=4.5V 22 20 RDS(ON) (mΩ) 16 25°C 18 16 14 VGS=10V VGS=10V 12 10 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 40 1.0E-01 30 IS (A) RDS(ON) (mΩ) ID=8.5A 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4914A Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 16 22 26 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0.76 50 RDS(ON) limited 1ms 10µs 10µs 100µs ID (A) 10ms 0.1s 1.0 20 25 30 TJ(Max)=150°C TA=25°C 40 Power (W) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 30 20 1s 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000