Ordering number : ENN7536 CPH3422 N-Channel Silicon MOSFET CPH3422 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2152A [CPH3422] 2.9 0.15 0.4 0.6 3 0.2 • 2 1 0.6 1.6 2.8 0.05 1.9 0.7 0.9 0.2 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V 1 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) V 4 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0 VDS=60V, VGS=0 Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.5A RDS(on)1 RDS(on)2 ID=0.5A, VGS=10V ID=0.5A, VGS=4V Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ Unit max 60 V 1.2 0.45 Marking : KX 1 µA ±10 µA 2.6 0.9 V S 480 630 mΩ 640 900 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82003 TS IM TA-100219 No.7536-1/4 CPH3422 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 70 Output Capacitance 9.0 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 6.5 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5 ns Rise Time tr td(off) See specified Test Circuit. 4 ns See specified Test Circuit. 12 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 12 ns VDS=30V, VGS=10V, ID=1A 3.0 nC nC Gate-to-Source Charge Qgs Qgd VDS=30V, VGS=10V, ID=1A VDS=30V, VGS=10V, ID=1A 0.6 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=1A, VGS=0 0.9 0.6 nC 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=0.5A RL=60Ω VIN D VOUT PW=10µs D.C.≤1% G CPH3422 50Ω VGS=3.0V 0.4 1.4 1.2 1.0 0.8 5°C 75° C --25 °C Drain Current, ID -- A 5.0 1.6 0.6 Ta= 2 0.4 0.2 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 0 2.0 1000 900 800 700 600 500 400 300 4 6 8 10 12 14 1.5 16 Gate-to-Source Voltage, VGS -- V 18 20 IT05975 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1100 2 1.0 4.5 5.0 IT05974 RDS(on) -- Ta 1200 Ta=25°C ID=0.5A 0 0.5 IT05973 RDS(on) -- VGS 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25° C 1.8 10.0 0.6 VDS=10V °C V 4 .0V 6.0V 8.0V V 3.5 V 0.8 ID -- VGS 2.0 75° C ID -- VDS 1.0 Drain Current, ID -- A S Ta= --25 P.G 1100 1000 900 V 4 S= VG A, 800 .5 =0 ID 700 V 10 S= , VG 5A 600 0. I D= 500 400 300 200 100 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT05976 No.7536-2/4 CPH3422 yfs -- ID VDS=10V °C -25 = 7 Ta 5 75 °C °C 25 3 2 3 2 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 5 5 0.6 7 Ciss, Coss, Crss -- pF td(off) 10 tf 7 5 td(on) 3 1.2 IT05978 Ciss 5 2 1.0 Ciss, Coss, Crss -- VDS 100 3 0.8 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 7 0.4 IT05977 SW Time -- ID 100 Switching Time, SW Time -- ns 1.0 7 5 5°C 25° C --25 °C 1.0 3 2 Ta= 7 2 Drain Current, ID -- A 3 2 Coss 10 7 Crss 5 3 tr 2 2 1.0 0.1 f=1MHz 1.0 2 3 5 7 Drain Current, ID -- A 0 1.0 IT05979 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 10 7 5 VDS=30V ID=1A <10µs 10 0µ s IDP=4A Drain Current, ID -- A 0.1 7 5 2.5 3.0 Total Gate Charge, Qg -- nC 3.5 IT05981 PD -- Ta 1.2 0.01 0.01 Operation in this area is limited by RDS(on). ) 2.0 C 5° =2 Ta n( 1.5 s 1.0 10 0.5 o ati 0 0m 3 2 3 2 0 er 2 op 4 ID=1A 10 6 1.0 7 5 s 1m ms 3 2 8 30 IT05980 ASO DC Gate-to-Source Voltage, VGS -- V VGS=0 3 0.1 0.01 Allowable Power Dissipation, PD -- W IF -- VSD 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 5 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7100 IT05982 1.0 0.9 M ou nte 0.8 do na ce ram 0.6 ic bo ard (9 0.4 00 mm 2 ✕0 .8 mm 0.2 ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05983 No.7536-3/4 CPH3422 Note on usage : Since the CPH3422 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2003. Specifications and information herein are subject to change without notice. PS No.7536-4/4