Micronas HAL566SF-K Two-wire hall-effect sensor family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 556, HAL 560,
HAL 566
Two-Wire Hall-Effect Sensor Family
Edition Aug. 11, 2009
DSH000026_004EN
HAL55x, HAL56x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235
and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability and Welding
6
2.
Functional Description
7
7
12
12
12
12
13
14
15
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specification
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
18
18
20
22
4.
4.1.
4.2.
4.3.
Type Description
HAL556
HAL560
HAL566
24
24
24
24
25
25
5.
5.1.
5.2.
5.3.
5.4.
5.5.
Application Notes
Application Circuit
Extended Operating Conditions
Start-up Behavior
Ambient Temperature
EMC and ESD
26
6.
Data Sheet History
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HAL55x, HAL56x
DATA SHEET
Two-Wire Hall-Effect Sensor Family Sensor Family
in CMOS technology
Release Note: Revision bars indicate significant
changes to the previous edition.
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
1.2. Family Overview
1. Introduction
This sensor family consists of different two-wire Hall
switches produced in CMOS technology. All sensors
change the current consumption depending on the
external magnetic field and require only two wires
between sensor and evaluation circuit. The sensors of
this family differ in the magnetic switching behavior
and switching points.
The sensors include a temperature-compensated Hall
plate with active offset compensation, a comparator,
and a current source. The comparator compares the
actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points).
Accordingly, the current source is switched on (high
current consumption) or off (low current consumption).
The types differ according to the mode of switching
and the magnetic switching points.
Type
Switching
Behavior
Sensitivity
see
Page
556
unipolar
very high
18
560
unipolar
inverted
low
20
566
unipolar
inverted
very high
22
Unipolar Switching Sensors:
The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters
are robust against mechanical stress effects.
The sensors are designed for industrial and automotive applications and operate with supply voltages from
4 V to 24 V in the junction temperature range from
−40 °C up to 140 °C. All sensors are available in the
SMD-package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features
– current output for two-wire applications
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field
is removed. The sensor does not respond to the magnetic north pole on the branded side.
Unipolar Inverted Switching Sensors:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field
is removed. The sensor does not respond to the magnetic north pole on the branded side.
– junction temperature range from −40 °C up to
140 °C.
– operates from 4 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– switching offset compensation at typically 145 kHz
– overvoltage and reverse-voltage protection
– magnetic characteristics are robust against
mechanical stress effects
– constant magnetic switching points over a wide supply voltage range
– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
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HAL55x, HAL56x
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1.3. Marking Code
1.5. Hall Sensor Package Codes
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type
Temperature Range
K
E
HAL556
556K
556E
HAL560
560K
560E
HAL566
566K
566E
Type: 556, 560, or 566
Example: HAL556UA-E
→ Type: 556
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +100 °C
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
K: TJ = −40 °C to +140 °C
Soldering
E: TJ = −40 °C to +100 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction temperature. Please refer to section 5.4. on page 25 for
details.
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1 VDD
3
NC
2
4
GND
Fig. 1–1: Pin configuration
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HAL55x, HAL56x
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2. Functional Description
The HAL55x, HAL56x two-wire sensors are monolithic
integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the
biased Hall plate forces a Hall voltage proportional to
this field. The Hall voltage is compared with the actual
threshold level in the comparator. The temperaturedependent bias increases the supply voltage of the
Hall plates and adjusts the switching points to the
decreasing induction of magnets at higher temperatures.
HAL55x, HAL56x
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Comparator
Current
Source
Switch
Clock
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source
is switched off and the current consumption is caused
only by the current through the Hall sensor. In the high
current consumption state, the current source is
switched on and the current consumption is caused by
the current through the Hall sensor and the current
source. The built-in hysteresis eliminates oscillation
and provides switching behavior of the output signal
without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced
through the Hall plate in a different direction, and the
Hall voltage is measured. At the end of the two
phases, the Hall voltages are averaged and thereby
the offset voltages are eliminated. The average value
is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from
crossing the magnetic switching level to switching of
the current level can vary between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
VDD-pin together with external series resistors.
Reverse current is limited at the VDD-pin by an internal
series resistor up to −15 V. No external protection
diode is needed for reverse voltages ranging from 0 V
to −15 V.
6
GND
2
Fig. 2–1: HAL55x, HAL56x block diagram
fosc
t
B
BOFF
BON
t
IDD
IDDhigh
IDDlow
t
IDD
1/fosc = 6.9 μs
t
Fig. 2–2: Timing diagram (example HAL56x)
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HAL55x, HAL56x
DATA SHEET
3. Specification
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas
Weight approximately 0.039 g
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Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
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Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
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HAL55x, HAL56x
DATA SHEET
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
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Fig. 3–1:
TO92UA-2: Dimensions ammopack inline, not spread
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3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1
TO92UA-1/-2
y
0.95 mm nominal
1.0 mm nominal
A4
0.3 mm nominal
0.3 mm nominal
3.05 mm ±50 μm
D1
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−151)2)
282)
V
TJ
Junction Temperature Range
−40
170
°C
1)
2)
−18 V with a 100 Ω series resistor at pin 1 (−16 V with a 30 Ω series resistor)
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4
24
V
TA
Ambient Temperature for
Continuous Operations
−40
851)
°C
1)
when using the “K” type and VDD ≤ 16 V
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the
supply voltage on and off (pulse mode). Please refer to section 5.4. on page 25 for details.
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HAL55x, HAL56x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
IDD
Low Current Consumption
over Temperature Range
1
2
3.3
5
mA
IDD
High Current Consumption
over Temperature Range
1
12
14.3
17
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
fosc
Internal Oscillator
Chopper Frequency
−
−
145
−
kHz
ten(O)
Enable Time of Output after
Setting of VDD
1
−
30
−
μs
1)
tr
Output Rise Time
1
−
0.4
1.6
μs
VDD = 12 V, Rs = 30 Ω
tf
Output Fall Time
1
−
0.4
1.6
μs
VDD = 12 V, Rs = 30 Ω
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
−
−
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–1
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point
−
−
150
200
K/W
1)
B > BON + 2 mT or B < BOFF - 2 mT for HAL55x,
Conditions
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
B > BOFF + 2 mT or B < BON - 2 mT for HAL56x
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–1: Recommended pad size SOT89B-1
Dimensions in mm
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3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 4.0 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching Type
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL556
−40 °C
3.4
6.3
7.7
2.1
4.2
5.9
0.8
2.1
3
mT
unipolar
25 °C
3.4
6
7.4
2
3.8
5.7
0.5
1.8
2.8
mT
100 °C
3.2
5.5
7.2
1.9
3.7
5.7
0.3
1.8
2.8
mT
140 °C
3
5.2
7.4
1.2
3.6
6
0.2
1.6
3
mT
HAL560
−40 °C
41
46.5
52
47
53
59
4
6.5
10
mT
unipolar
25 °C
41
46.6
52
46
52.5
58.5
3
6
9
mT
inverted
100 °C
41
45.7
52
45
41.1
57.5
2
5.4
8
mT
140 °C
39
44.8
51
43.5
49.8
56.5
2
5
8
mT
HAL566
−40 °C
2.1
4
5.9
3.4
6
7.7
0.8
2
2.8
mT
unipolar
25 °C
2
3.9
5.7
3.4
5.9
7.2
0.5
2
2.7
mT
inverted
100 °C
1.85
3.8
5.7
3.25
5.6
7
0.3
1.8
2.6
mT
140 °C
1.3
3.6
7.3
2.6
5.2
7.3
0.2
1.6
3
mT
Note: For detailed descriptions of the individual types, see pages 18 and following.
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HAL55x, HAL56x
DATA SHEET
HAL 55x, HAL 56x
mA
25
mA
20
HAL 55x, HAL 56x
18
20
IDD
IDD
IDDhigh
15
16
IDDhigh
14
10
12
5
VDD = 4 V
10
IDDlow
0
VDD = 12 V
8
−5
VDD = 24 V
TA = −40 °C
6
TA = 25 °C
−10
−15
−20
−15
−5
5
TA = 100 °C
4
TA = 140 °C
2
15
0
−50
35 V
25
IDDlow
0
50
100
VDD
Fig. 3–4: Typical supply current
versus ambient temperature
HAL 55x, HAL 56x
kHz
200
18
IDD
HAL 55x, HAL 56x
180
fosc
IDDhigh
16
14
160
140
12
10
TA = −40 °C
120
TA = 25 °C
100
VDD = 4 V
80
VDD = 12 V
TA = 100 °C
8
TA = 140 °C
6
VDD = 24 V
60
IDDlow
4
40
2
0
20
0
1
2
3
4
5
6 V
0
−50
VDD
Fig. 3–3: Typical supply current
versus supply voltage
16
200 °C
TA
Fig. 3–2: Typical supply current
versus supply voltage
mA
20
150
0
50
100
150
200 °C
TA
Fig. 3–5: Typ. internal chopper frequency
versus ambient temperature
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HAL55x, HAL56x
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kHz
200
kHz
200
HAL 55x, HAL 56x
180
fosc
HAL 55x, HAL 56x
180
fosc
160
160
140
140
120
120
100
100
80
TA = −40 °C
80
TA = −40 °C
60
TA = 25 °C
60
40
TA = 100°C
40
TA = 25 °C
TA = 100°C
TA = 140°C
TA = 140°C
20
0
20
0
5
10
15
20
25
30 V
0
VDD
4
5
6
7
8 V
VDD
Fig. 3–6: Typ. internal chopper frequency
versus supply voltage
Micronas
3
Fig. 3–7: Typ. internal chopper frequency
versus supply voltage
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HAL55x, HAL56x
DATA SHEET
4. Type Description
Applications
4.1. HAL556
The HAL556 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position such as:
The HAL556 is a very sensitive unipolar switching sensor (see Fig. 4–1).
– applications with large airgap or weak magnets,
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Current consumption
IDDhigh
In the HAL55x, HAL56x two-wire sensor family, the
HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic.
BHYS
IDDlow
Magnetic Features:
– switching type: unipolar
0
BOFF
B
BON
– very high sensitivity
Fig. 4–1: Definition of magnetic switching points for
the HAL556
– typical BON: 6 mT at room temperature
– typical BOFF: 4 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
3.4
6.3
7.7
2.1
4.2
5.9
0.8
2.1
3
25 °C
3.4
6
7.4
2
3.8
5.7
0.5
1.8
2.8
100 °C
3.2
5.5
7.2
1.9
3.7
5.7
0.3
1.8
2.8
4.6
mT
140 °C
3
5.2
7.4
1.2
3.6
6
0.2
1.6
3
4.4
mT
5.2
2.7
4.9
mT
6.5
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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HAL55x, HAL56x
DATA SHEET
mT
8
mT
8
HAL 556
HAL 556
BONmax
BON
BOFF
7
BON
BOFF
BON
7
BONtyp
6
6
BOFFmax
5
5
4
4
BOFFtyp
BOFF
3
3
TA = −40 °C
TA = 25 °C
2
BONmin
BOFFmin
2
VDD = 4 V
TA = 100 °C
TA = 140 °C
1
VDD = 12 V
1
VDD = 24 V
0
0
5
10
15
20
25
30 V
0
−50
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
BON
BOFF
HAL 556
7
50
100
150
200 °C
TA, TJ
VDD
mT
8
0
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin,
B ONmax, BOFF min, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
BOFF
6
5
4
BON
3
TA = −40 °C
TA = 25 °C
2
TA = 100 °C
TA = 140 °C
1
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
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HAL55x, HAL56x
DATA SHEET
4.2. HAL560
Applications
The HAL560 is a low-sensitive unipolar switching sensor with an inverted output (see Fig. 4–5).
The HAL560 is designed for applications with one
magnetic polarity and strong magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with strong magnets,
– solid state switches,
– contactless solutions to replace micro switches,
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– position and end point detection, and
– rotating speed measurement.
Magnetic Features:
Current consumption
– switching type: unipolar inverted
IDDhigh
– low sensitivity
BHYS
– typical BON: 45.6 mT at room temperature
– typical BOFF: 51.7 mT at room temperature
IDDlow
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
0
BON
B
BOFF
Fig. 4–5: Definition of magnetic switching points for
the HAL560
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Max.
−40 °C
41
46.5
52
47
53
59
4
6.5
10
49.8
mT
25 °C
41
46.5
52
46
52.5
58.5
3
6
9
49.5
mT
100 °C
41
45.7
52
45
51.1
57.5
2
5.4
8
48.4
mT
140 °C
39
44.8
51
43.5
49.8
56.5
2
5
8
47.3
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
HAL55x, HAL56x
DATA SHEET
mT
60
HAL 560
mT
60
HAL 560
BOFFmax
BON
BOFF 55
BON
BOFF 55
BOFF
50
50
BOFFtyp
BONmax
BONtyp
BON
45
45
BOFFmin
TA = –40 °C
40
40
TA = 25 °C
BONmin
TA = 100 °C
TA = 140 °C
35
VDD = 4 V
35
VDD = 12 V
VDD = 24 V
30
0
5
10
15
20
25
30 V
30
–50
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
HAL 560
BON
BOFF 55
50
100
150
200 °C
TA, TJ
VDD
mT
60
0
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin,
B ONmax, BOFF min, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
BOFF
50
45
BON
TA = –40 °C
40
TA = 25 °C
TA = 100 °C
TA = 140 °C
35
30
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
Micronas
Aug. 11, 2009; DSH000026_004EN
21
HAL55x, HAL56x
DATA SHEET
4.3. HAL566
Applications
The HAL566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4–9).
The HAL566 is designed for applications with one
magnetic polarity and weak magnetic amplitudes at
the sensor position where an inverted output signal is
required such as:
The sensor turns to low current consumption with the
magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side.
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
– position and end point detection, and
– rotating speed measurement.
In the HAL55x, HAL56x two-wire sensor family, the
HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: unipolar inverted
IDDlow
– high sensitivity
– typical BON: 4 mT at room temperature
0
BON
BOFF
B
– typical BOFF: 5.9 mT at room temperature
Fig. 4–9: Definition of magnetic switching points for
the HAL566
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
2.1
4
5.9
3.4
6
7.7
0.8
2
2.8
−
5
−
mT
2
3.9
5.7
3.4
5.9
7.2
0.5
2
2.7
3
4.9
6.2
mT
100 °C
1.85
3.8
5.7
3.25
5.6
7
0.3
1.8
2.6
−
4.7
−
mT
140 °C
1.3
3.6
6
2.6
5.2
7.3
0.2
1.6
3
−
4.4
−
mT
−40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
HAL55x, HAL56x
DATA SHEET
mT
8
mT
8
HAL 566
HAL 566
BOFFmax
BON
BOFF
7
BON
BOFF
BOFF
6
7
6
BONmax
BOFFtyp
5
5
BONtyp
BON
4
4
BOFFmin
3
3
TA = −40 °C
BONmin
TA = 25 °C
2
2
TA = 100 °C
VDD = 4 V
1
TA = 140 °C
1
VDD = 12 V
VDD = 24 V
0
0
5
10
15
20
25
30 V
0
−50
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
8
0
HAL 566
7
Fig. 4–12: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus temperature”, the curves for B ONmin,
B ONmax, BOFF min, and BOFFmax refer to
junction temperature, whereas typical curves
refer to ambient temperature.
BOFF
6
5
4
BON
3
TA = −40 °C
TA = 25 °C
2
TA = 100 °C
TA = 140 °C
1
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
Micronas
Aug. 11, 2009; DSH000026_004EN
23
HAL55x, HAL56x
DATA SHEET
5. Application Notes
5.2. Extended Operating Conditions
5.1. Application Circuit
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13).
Figure 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
of the sensor, the voltage between pin 1 and 2 (VDD)
must be a minimum of 4 V. With the maximum current
consumption of 17 mA, the maximum RL can be calculated as:
R Lmax
Typically, the sensors operate with supply voltages
above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside
the specification.
Note: The functionality of the sensor below 4 V is not
tested on a regular base. For special test conditions, please contact Micronas.
V SUPmin – 4V
= --------------------------------17mA
5.3. Start-up Behavior
VSUP
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 14). During the initialization time, the current consumption is not defined and can toggle between low
and high.
VSIG
RL
2 or x GND
Fig. 5–1: Application circuit 1
HAL55x:
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging
from 10 Ω to 30 Ω) and a capacitor both placed close
to the sensor are recommended (see Fig. 5–2). In this
case, the maximum RL can be calculated as:
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current
consumption will be low if B is below BOFF.
V SUPmin – 4V
R Lmax = --------------------------------- – RV
17mA
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and
high if B < BON.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be
either low or high after applying VDD. In order to
achieve a defined current consumption, the
applied magnetic field must be above BON,
respectively, below BOFF.
1 VDD
VSUP
HAL56x:
RV
VSIG
4.7 nF
RL
2 or x GND
Fig. 5–2: Application circuit 2
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Micronas
HAL55x, HAL56x
DATA SHEET
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temperature TA).
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
T J = T A + ΔT
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Under static conditions and continuous operation, the
following equation applies:
ΔT = I DD × V DD × RTH
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV1
RV2
100 Ω
30 Ω
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
1 VDD
VEMC
T Amax = T Jmax – ΔT
4.7 nF
2 GND
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
Fig. 5–3: Recommended EMC test circuit
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from
30 μs to 1 ms, the following equation can be used:
t on
ΔT = I DD × VDD × Rth × -------------------t off + t on
Micronas
Aug. 11, 2009; DSH000026_004EN
25
HAL556, HAL560, HAL566
6. Data Sheet History
1. Data sheet: “HAL54x Hall-Effect Sensor Family”,
Nov. 27, 2002, 6251-605-1DS. First release of the
data sheet.
2. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, Aug. 3, 2000,
6251-425-2DS. Second release of the data sheet.
Major changes:
– magnetic characteristics for HAL556 and HAL560
changed. Please refer to pages 12 and 14 for
details.
– new temperature ranges “K” and “A” added
DATA SHEET
6. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire
Hall-Effect Sensor Family”, Feb. 12, 2009,
DSH000026_004EN. Sixth release of the data
sheet. Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89B-1 was added).
7. Data Sheet: “HAL556, HAL560, HAL566 Two-Wire
Hall-Effect Sensor Family”, July 30, 2009,
DSH000026_004EN. Seventh release of the data
sheet. Major changes:
– Package outlines updated
– HAL 560 added.
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced tolerances
– SMD package SOT-89A removed
3. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, Jan. 28, 2003,
6251-425-3DS. Third release of the data sheet.
Major changes:
– temperature range “A” removed
– outline dimensions for TO-92UA changed
4. Data sheet: “HAL556, HAL560, HAL566, Two-Wire
Hall-Effect Sensor Family, May 14, 2004,
6251-425-4DS (DSH000026_001EN). Fourth
release of the data sheet. Major changes:
– new package diagrams for SOT89B-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
5. Data Sheet: “HAL556, HAL566 Two-Wire HallEffect Sensor Family”, Dec. 19, 2008,
DSH000026_002EN. Fifth release of the data sheet.
Major changes:
– Section 1.6. on page 5 “Solderability and Welding
updated
– all package diagrams updated
– recommended footprint SOT89B-1 added
– HAL 560 removed.
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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Aug. 11, 2009; DSH000026_004EN
Micronas