BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD745 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD745A BD745B VALUE VCBO 70 90 BD745C 110 BD745 45 BD745A BD745B UNIT 50 VCEO BD745C 60 80 V V 100 V EBO 5 V IC 20 A ICM 25 A IB 7 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 115 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W ½LIC 2 90 mJ Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V (BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter MIN 45 BD745A 60 BD745B 80 BD745C 100 TYP MAX IC = 30 mA IB = 0 VCE = 50 V VBE = 0 BD745 0.1 V CE = 70 V VBE = 0 BD745A 0.1 V CE = 90 V VBE = 0 BD745B 0.1 Collector cut-off V CE = 110 V VBE = 0 BD745C 0.1 current V CE = 50 V VBE = 0 TC = 125°C BD745 5 V CE = 70 V VBE = 0 TC = 125°C BD745A 5 V CE = 90 V VBE = 0 TC = 125°C BD745B 5 V CE = 110 V VBE = 0 TC = 125°C BD745C Collector cut-off VCE = 30 V IB = 0 BD745/745A 0.1 current V CE = 60 V IB = 0 BD745B/745C 0.1 VEB = 5V IC = 0 breakdown voltage Emitter cut-off current Forward current transfer ratio VCE = 4V IC = 1 A V CE = 4V IC = 5 A V CE = 4V IC = 20 A Collector-emitter IB = 0.5 A IC = 5 A saturation voltage IB = 5A IC = 20 A (see Note 5) BD745 0.5 20 mA 150 1 (see Notes 5 and 6) 3 VCE = 4V IC = 5 A 4V IC = 20 A VCE = 10 V IC = 1 A f = 1 kHz 25 VCE = 10 V IC = 1 A f = 1 MHz 5 current transfer ratio mA 5 V CE = Small signal forward mA 40 (see Notes 5 and 6) voltage current transfer ratio V 5 Base-emitter Small signal forward UNIT 1 (see Notes 5 and 6) 3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.1 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP td Delay time 20 ns tr Rise time IC = 5 A IB(on) = 0.5 A IB(off) = -0.5 A 350 ns ts Storage time V BE(off) = -4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 500 ns tf Fall time 400 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT hFE - DC Current Gain TC = 125°C TC = 25°C TC = -55°C VCE = 4 V t p = 300 µs, duty cycle < 2% 10 0·1 1·0 10 100 TCS635AF 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS635AE 100 IC = 10 IB tp = 300µs, duty cycle < 2% 1·0 0·1 TC = -55°C TC = 25°C TC = 125°C 0·01 0·1 1·0 IC - Collector Current - A 10 100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS635AC tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD745 BD745A BD745B BD745C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 3. PRODUCT INFORMATION 3 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AB Ptot - Maximum Power Dissipation - W 120 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 4. PRODUCT 4 INFORMATION 125 150 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT MDXXAW INFORMATION 5 BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION