TI1 LM3433 Common anode capable high brightness led driver with high frequency dimming Datasheet

LM3433
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SNVS535B – OCTOBER 2007 – REVISED MARCH 2008
LM3433 Common Anode Capable High Brightness LED Driver with High Frequency
Dimming
Check for Samples: LM3433
FEATURES
1
•
2
•
•
•
•
•
•
Operating input voltage range of -9V to -14V
w.r.t. LED anode
Control inputs are referenced to the LED
anode
Output current greater than 6A
Greater than 30kHz PWM frequency capable
Negative output voltage capability allows LED
anode to be tied directly to chassis for
maximum heat sink efficacy
No output capacitor required
Up to 1MHz switching frequency
•
•
•
•
Low IQ, 1mA typical
Soft start
Adaptive programmable ON time allows for
constant ripple current
LLP-24 package
APPLICATIONS
•
•
•
•
LCD backlighting
Projection systems
Solid state lighting
Automotive lighting
DESCRIPTION
The LM3433 is an adaptive constant on-time DC/DC buck (step-down) constant current controller (a true current
source). The LM3433 provides a constant current for illuminating high power LEDs. The output configuration
allows the anodes of multiple LEDs to be tied directly to the ground referenced chassis for maximum heat sink
efficacy. The high frequency capable architecture allows the use of small external passive components and no
output capacitor while maintaining low LED ripple current. Two control inputs are used to modulate LED
brightness. An analog current control input is provided so the LM3433 can be adjusted to compensate for LED
manufacturing variations and/or color temperature correction. The other input is a logic level PWM control of LED
current. The PWM functions by shorting out the LED with a parallel switch allowing high PWM dimming
frequencies. High frequency PWM dimming allows digital color temperature control, interference blanking, field
sequential illumination, and brightness control. Additional features include thermal shutdown, VCC under-voltage
lockout, and logic level shutdown mode. The LM3433 is available in a low profile LLP-24 package.
Typical Application Circuit
0.1
PF
44.2k
LED ANODE
ADJ
ADJ
EN
EN
DIM
DIM
DMO
TON
DIMR
-12V
BST2
CSP
270 pF
CSN
Q3
Q1
HO
0.47 PF
LM3433
BST
6 PH
0.01
LED CATHODE
Q2
LS
LO
SS
COMP
4.7 PF
VEE
VIN
CGND
VCC
+3.3V
LED
HS
22 PF
2.2 PF
GND
0.01
PF
-12V
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2008, Texas Instruments Incorporated
LM3433
SNVS535B – OCTOBER 2007 – REVISED MARCH 2008
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Connection Diagram
NC
BST2
DIMO
DIMR
21
20
19
CSN
23
22
CSP
24
Top View
TON
1
18
HS
ADJ
2
17
HO
EN
3
16
BST
DIM
4
15
VCC
VIN
5
14
LO
CGND
6
13
LS
7
8
9
10
11
12
VEE
COMP
NC
SS
NC
NC
LM3433
Figure 1. 24-Lead LLP
NS Package Number SQA24A
Pin Functions
Pin Descriptions
Pin
2
Name
Function
1
TON
On-time programming pin. Tie an external resistor (RON) from TON to CSN, and a capacitor (CON)
from TON to VEE. This sets the nominal operating frequency when the LED is fully illuminated.
2
ADJ
Analog LED current adjust. Tie to VIN for fixed 60mV average current sense resistor voltage. Tie to
an external reference to adjust the average current sense resistor voltage (programmed output
current). Refer to the "VSENSE vs. ADJ Voltage" graphs in the Typical Performance Characteristics
section and the Design Procedure section of the datasheet.
3
EN
Enable pin. Connect this pin to logic level HI or VIN for normal operation. Connect this pin to CGND
for low current shutdown. EN is internally tied to VIN through a 100k resistor.
4
DIM
Logic level input for LED PWM dimming. DIM is internally tied to CGND through a 100k resistor.
5
VIN
Logic power input: Connect to positive voltage between +3.0V and +5.8V w.r.t. CGND.
6
CGND
7
VEE
8
COMP
9
NC
No internal connection. Tie to VEE or leave open.
10
SS
Soft Start pin. Tie a capacitor from SS to VEE to reduce input current ramp rate. Leave pin open if
function is not used. The SS pin is pulled to VEE when the device is not enabled.
11
NC
No internal connection. Tie to VEE or leave open.
12
NC
No internal connection. Tie to VEE or leave open.
13
LS
Low side FET gate drive return pin.
14
LO
Low side FET gate drive output. Low in shutdown.
15
VCC
Low side FET gate drive power bypass connection and boost diode anode connection. Tie a 2.2µF
capacitor between VCC and VEE.
16
BST
High side "synchronous" FET drive bootstrap rail.
17
HO
High side "synchronous" FET gate drive output. Pulled to HS in shutdown.
18
HS
Switching node and high side "synchronous" FET gate drive return.
19
DIMR
LED dimming FET gate drive return. Tie to LED cathode.
20
DIMO
LED dimming FET gate drive output. DIMO is a driver that switches between DIMR and BST2.
Chassis ground connection.
Negative voltage power input: Connect to voltage between –14V to –9V w.r.t. CGND.
Compensation pin. Connect a capacitor between this pin and VEE.
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Pin Descriptions (continued)
Pin
Name
21
BST2
Function
DIMO high side drive supply pin. Tie a 0.1µF between BST2 and CGND.
22
NC
23
CSN
No internal connection. Tie to VEE or leave open.
Current sense amplifier inverting input. Connect to current sense resistor negative terminal.
24
CSP
Current sense amplifier non-inverting input. Connect to current sense resistor positive terminal.
EP
VEE
Exposed Pad on the underside of the device. Connect this pad to a PC board plane connected to
VEE.
Block Diagram
VIN
CGND
Linear
Regulator
BST2
Level
Shift
DIM
PWM
Driver
DIMO
Level
Shift
EN
DIMR
ADJ
VCC
UVLO
BST
Thermal
Shutdown
+
Gm
CSP
+
CSN
-
Bootstrap
Driver
Programmable
ON Time
Gm
HO
HS
Off-Time
Comp
Low Side
Gate
Driver
10 PA
LO
LS
SS
COMP
VEE
TON
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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(1)
Absolute Maximum Ratings
VIN, EN, DIM, ADJ to CGND
-0.3V to +7V
COMP, SS to VEE
-0.3V to +7V
BST to HS
-0.3V to +7V
VCC to VEE
-0.3V to +7.5V
CGND, DIMR, CSP, CSN, TON to VEE
-0.3V to +16V
HS to VEE (2)
-0.3V to +16V
LS to VEE
-0.3V to +0.3V
HO output
HS-0.3V to BST+0.3V
DIMO to DIMR
-0.3V to +7V
LO output
LS-0.3V to VCC +0.3V
BST2 to VEE
-0.3V to 22.0V
Maximum Junction Temperature
150°C
Power Dissipation (3)
Internally Limited
ESD Susceptibility
(4)
Human Body Model
2kV
Machine Model
200V
Charge Device Model
(1)
(2)
(3)
(4)
1kV
Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
The HS pin can go to -6V with respect to VEE for 30ns and +22V with respect to VEE for 50ns without sustaining damage.
The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal
resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated
using: PD (MAX) = (TJ(MAX) − TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and
the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Thermal
shutdown engages at TJ=175°C (typ.) and disengages at TJ=155°C (typ).
Human Body Model, applicable std. JESD22-A114-C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device
Model, applicable std. JESD22-C101-C.
Operating Conditions
Operating Junction Temperature Range
(1)
−40°C to +125°C
−65°C to +150°C
Storage Temperature
Input Voltage VIN w.r.t. CGND
3.0V to 5.8V
Input Voltage VEE w.r.t. CGND
-9V to -14V
ADJ Input Voltage Range to CGND
0V to VIN
CSP, CSN Common Mode Range With Respect to CGND
-6V to 0V
(1)
4
All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits
are 100% production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control
(SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
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Electrical Characteristics
Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating
Temperature Range ( TJ = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or
statistical correlation. Typical values represent the most likely parametric norm at TJ = +25ºC, and are provided for reference
purposes only. Unless otherwise stated the following conditions apply: VEE = -12.0V and VIN = +3.3V with respect to CGND.
Symbol
Parameter
Conditions
Min (1)
Typ (2)
Max (1)
3
19
Units
SUPPLY CURRENT
IINVEE
IINVIN
VEE Quiescent Current
VIN Quiescent Current
EN = CGND
EN = VIN, Not Switching
1.0
EN = VIN, Not Switching
300
EN = CGND
35
71
µA
mA
µA
OUTPUT CURRENT CONTROL
VCS
Current sense target voltage;
VCS = VCSP – VCSN
VADJ = VIN
57
60
63
mV
GADJ
IADJ Gain = (VADJCGND)/(VCNP-VCSN)
VIN = 3.3V, VADJ = 0.5V or
1.5V w.r.t. CGND
15
16.67
18
V/V
ICSN
Isense Input Current
VADJ = 1V w.r.t. CGND
-50
VADJ = VIN
10
VADJ = VIN
60
VADJ = 1V w.r.t. CGND
1
ICSP
Isense Input Current
Gm
CS to COMP
Transconductance; Gm =
ICOMP / (VCSP – VCSN VADJ/16.67)
µA
µA
0.6
1.3
2.2
mS
VTON - VEE at terminate ON
time event
230
287
334
mV
7.1
V
ON TIME CONTROL
TONTH
On time threshold
GATE DRIVE AND INTERNAL REGULATOR
VCCOUT
VCC output regulation w.r.t.
VEE
ICC = 0mA to 20mA
6.3
6.75
VCCILIM
VCC current limit
VCC = VEE
33
53
ROLH
HO output low resistance
I = 50mA source
2
ROHH
HO output high resistance
I = 50mA sink
3
ROLL
LO output low resistance
I = 50mA source
2
ROHL
LO output high resistance
I = 50mA sink
3
ROLP
DIMO output low resistance
I = 5mA source
20
ROHP
DIMO output high resistance
I = 5mA sink
30
mA
Ω
Ω
Ω
FUNCTIONAL CONTROL
VINUVLO
VIN undervoltage lockout
VCCUVLO
VCC - VEE undervoltage lockout On Threshold
thresholds
Off threshold
VEN
Enable threshold, with respect
to CGND
REN
Enable pin pullup resistor
VDIM
DIM logic input threshold
With respect to CGND
Device off w.r.t. CGND
DIM pin pulldown resistor
IADJ
ADJ pin current
(1)
(2)
V
6.6
7.0
4.9
5.4
5.8
Device on w.r.t. CGND
V
1.6
V
0.6
100
DIM rising threshold w.r.t.
CGND
DIM falling threshold w.r.t.
CGND
RDIM
1.4
6.0
kΩ
1.6
V
0.6
100
-1.0
kΩ
1.0
µA
All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits
are 100% production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control
(SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
Typical numbers are at 25°C and represent the most likely norm.
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Electrical Characteristics (continued)
Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating
Temperature Range ( TJ = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or
statistical correlation. Typical values represent the most likely parametric norm at TJ = +25ºC, and are provided for reference
purposes only. Unless otherwise stated the following conditions apply: VEE = -12.0V and VIN = +3.3V with respect to CGND.
Symbol
Parameter
ISS
SS pin source current
RSS
SS pin pulldown resistance
Conditions
Min (1)
Typ (2)
Max (1)
Units
10
µA
EN = CGND
1.0
kΩ
LO falling to HO rising dead
time
26
HO falling to LO rising dead
time
28
DIM rising to DIMO rising
delay
68
124
DIM falling to DIMO falling
delay
58
160
AC SPECIFICATIONS
TDTD
LO and HO dead time
TPDIM
DIM to DIMO propagation
delay
ns
ns
THERMAL SPECIFICATIONS
TJLIM
Junction temperature thermal
limit
TJLIM(hyst)
Thermal limit hysteresis
θJA
LLP-24 package thermal
resistance
6
JEDEC 4 layer board
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175
°C
20
°C
39
°C/W
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Typical Performance Characteristics
Efficiency
vs.
LED Forward Voltage
(VCGND-VEE = 9V)
Efficiency
vs.
LED Forward Voltage
(VCGND-VEE = 12V)
97
96
2A
4A
6A
8A
96
94
94
EFFICIENCY (%)
EFFICIENCY (%)
95
93
92
91
90
2A
4A
6A
8A
89
88
87
1
2
3
4
5
6
92
90
88
86
84
7
1
2
3
VLED (V)
Efficiency
vs.
LED Forward Voltage
(VCGND-VEE = 14V)
5
6
7
VSENSE
vs.
VADJ
(VIN = 3.3V)
100
96
2A
4A
6A
8A
94
90
80
70
VSENSE (mV)
92
EFFICIENCY (%)
4
VLED (V)
90
88
86
60
50
40
30
84
20
82
10
0
0.2
80
1
2
3
4
5
6
7
0.4
0.6
0.8
1
1.2
1.4
1.6
60
80
ADJ VOLTAGE (V)
VLED (V)
VSENSE
vs.
VADJ
(VIN = 5.0V)
VSENSE
vs.
Temperature
(ADJ = VIN)
61
250
60.8
60.6
200
VSENSE (mV)
VSENSE (mV)
60.4
150
100
60.2
60
59.8
59.6
59.4
50
59.2
0
0.2
0.7
1.2
1.7
2.2
2.7
59
-40
3.2
-20
0
20
40
AMBIENT TEMPERATURE
(°C)
ADJ VOLTAGE (V)
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Typical Performance Characteristics (continued)
VSENSE
vs.
Temperature
(ADJ = 1.0V)
Average LED Current
vs.
DIM Duty Cycle
(30kHz dimming, ILED = 6A nominal)
61
7
AVERAGE LED CURRENT (A)
60.8
60.6
VSENSE (mV)
60.4
60.2
60
59.8
59.6
59.4
59.2
59
-40
-20
0
20
40
60
6
5
4
3
2
1
0
80
AMBIENT TEMPERATURE
(°C)
0
10 20 30 40 50 60 70 80 90 100
DIM DUTY CYCLE (%)
Startup Waveform
Shutdown Waveform
ILED = 6A nominal, VIN = 3.3V, VEE = -12V, VLED = 3V, SS = open
ILED = 6A nominal, VIN = 3.3V, VEE = -12V, VLED = 3V, SS = open
Top trace: EN input, 2V/div, DC
Top trace: EN input, 2V/div, DC
Middle trace: VEE input current, 2A/div, DC
Middle trace: VEE input current, 2A/div, DC
Bottom trace: ILED, 2A/div, DC
Bottom trace: ILED, 2A/div, DC
T = 100µs/div
T = 100µs/div
30kHz PWM Dimming Waveform Showing Inductor Ripple Current
ILED = 6A nominal, VIN = 3.3V, VEE = -12V
Top trace: DIM input, 2V/div, DC
Bottom trace: ILED, 2A/div, DC
T = 10µs/div
Operation
CURRENT REGULATOR OPERATION
The LM3433 is a controller for a Continuous Conduction Buck Converter. Because of its buck topology and
operation in the continuous mode, the output current is very well controlled. It only varies within a switching
frequency cycle by the inductor ripple current. This ripple current is normally set at 10% of the DC current.
Setting the ripple current lower than 10% is a useful tradeoff of inductor size for less LED light output ripple.
Additional circuitry can be added to achieve any LED light ripple desired.
8
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The LED current is set by the voltage across a sense resistor. This sense voltage is nominally 60mV but can be
programmed higher or lower by an external control voltage.
The running frequency of the converter is programmed by an external RC network in conjunction with the LED's
forward voltage. The frequency is nominally set around 200kHz to 500khz. Fast PWM control is available by
shorting the output of the current source by a MOSFET in parallel with the LED. During the LED OFF time the
running frequency is determined by the RC network and the parasitic resistance of the output circuit including the
DIM FET RDSON.
The LM3433 system has been evaluated to be a very accurate, high compliance current source. This is manifest
in its high output impedance and accurate current control. The current is measured to vary less than 6mA out of
6A when transitioning from LED OFF (output shorted) to LED ON (output ~6V).
PROTECTION
The LM3433 has dedicated protection circuitry running during normal operation. The thermal shutdown circuitry
turns off all power devices when the die temperature reaches excessive levels. The VCC undervoltage lockout
(UVLO) comparator protects the power devices during power supply startup and shutdown to prevent operation
at voltages less than the minimum operating input voltage. The VCC pin is short circuit protected to VEE. The
LM3433 also features a shutdown mode which decreases the supply current to approximately 35µA.
The ADJ, EN, and DIM pins are capable of sustaining up to +/-2mA. If the voltages on these pins will exceed
either VIN or CGND by necessity or by a potential fault, an external resistor is recommended for protection. Size
this resistor to limit pin current to under 2mA. A 10k resistor should be sufficient. This resistor may be used in
any application for added protection without any impact on function or performance.
DESIGN PROCEDURE
This section presents guidelines for selecting external components.
SETTING LED CURRENT CONTROL
LM3433 uses average current mode control to regulate the current delivered to the LED (ILED). An external
current sense resistor (RSENSE) in series with the LED is used to convert ILED into a voltage that is sensed by the
LM3433 at the CSP and CSN pins. CSP and CSN are the inputs to an error amplifier with a programmed input
offset voltage (VSENSE). VSENSE is used to regulate ILED based on the following equation:
ILED = VSENSE/RSENSE
(1)
FIXED LED CURRENT
The ADJ pin sets VSENSE. Tie ADJ to VIN to use a fixed 60mV internal reference for VSENSE. Select RSENSE to fix
the LED current based on the following equation:
RSENSE = 60mV/ILED
(2)
ADJUSTABLE LED CURRENT
When tied to an external voltage the ADJ pin sets VSENSE based on the following equation:
VSENSE = (VADJ - VCGND)/16.66
(3)
When the reference on ADJ is adjustable, VSENSE and ILED can be adjusted within the linear range of the ADJ pin.
This range has the following limitations:
0.3V < VADJ < (The greater of 1.5V or (VIN - 1.9V))
(4)
When VADJ is less than this linear range the VSENSE is guaranteed by design to be less than or equal to
0.3V/16.667. When VADJ is greater than this linear range and less than VIN - 1V, VSENSE is guaranteed by design
to be less than or equal to VADJ/16.667. If VADJ is greater than VIN - 1V, VSENSE switches to 60mV.
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INPUT CAPACITOR SELECTION
A low ESR ceramic capacitor is needed to bypass the MOSFETs. This capacitor is connected between the drain
of the synchronous FET (CGND) and the source of the main switch (VEE). This capacitor prevents large voltage
transients from appearing at the VEE pin of the LM3433. Use a 22µF value minimum with X5R or X7R dielectric.
In addition to the FET bypass capacitors, additional bypass capacitors should be placed near the VEE and VIN
pins and should be returned to CGND.
The input capacitor must also be sized to handle the dimming frequency input ripple when the DIM function is
used. This ripple may be as high as 85% of the nominal DC input current (at 50% duty cycle). When dimming
this input capacitor should be selected to handle the input ripple current.
RECOMMENDED OPERATING FREQUENCY AND ON TIME "TIMEON" CALCULATION
Although the switching frequency can be set over a wide range, the following equation describes the
recommended frequency selection given inexpensive magnetic materials available today:
f=
A
ILED
(MHz)
(5)
In the above equation A=1.2 for powdered iron core inductors and A=0.9 or less for ferrite core inductors. This
difference takes into account the fact that ferrite cores generally become more lossy at higher frequencies. Given
the switching frequency f calculated above, TIMEON can be calculated. If VLED is the forward voltage drop of the
LED that is being driven, TIMEON can be calculated with the following equation:
VLED
TIMEON =
f|VEE|
(6)
TIMING COMPONENTS (RON and CON)
Using the calculated value for TIMEON, the timing components RON and CON can be selected. CON should be
large enough to dominate the parasitic capacitance of the TON pin. A good CON value for most applications is
1nF. Based on calculated TIMEON, CON, and the nominal VEE and VLED voltages, RON can be calculated based on
the following equation:
RON =
TIMEON
CON(0.3/(|VEE|-VLED))
(7)
INDUCTOR SELECTION
The most critical inductor parameters are inductance, current rating, and DC resistance. To calculate the
inductance, use the desired peak to peak LED ripple current (IRIPPLE), RON, and CON. A reasonable value for
IRIPPLE is 10% of ILED. The inductor value is calculated using the following equation:
L=
0.3 x RON x CON
IRIPPLE
(8)
For all VLED and VEE voltages, IRIPPLE remains constant and is only dependent on the passive external
components RON, CON, and L.
The I2R loss caused by the DC resistance of the inductor is an important parameter affecting the efficiency.
Lower DC resistance inductors are larger. A good tradeoff point between the efficiency and the core size is
letting the inductor I2R loss equal 1% to 2% of the output power. The inductor should have a current rating
greater than the peak current for the application. The peak current is ILED plus 1/2 IRIPPLE.
POWER FET SELECTION
FETs should be chosen so that the I2RDSON loss is less than 1% of the total output power. Analysis shows best
efficiency with around 8mΩ of RDSON and 15nC of gate charge for a 6A application. All of the switching loss is in
the main switch FET. An additional important parameter for the synchronous FET is reverse recovery charge
(QRR). High QRR adversely affects the transient voltages seen by the IC. A low QRR FET should be used.
10
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DIM FET SELECTION
Choose a DIM FET with the lowest RDSON for maximum efficieny and low input current draw during the DIM
cycle. The output voltage during DIM will determine the switching frequency. A lower output voltage results in a
lower switching frequency. If the lower frequency during DIM must be bound, choose a FET with a higher RDSON
to force the switching frequency higher during the DIM cycle.
BOOTSTRAP CAPACITORS
The LM3433 uses two bootstrap capacitors and a bypass capacitor on VCC to generate the voltages needed to
drive the external FETs. A 2.2µF ceramic capacitor or larger is recommended between the VCC and LS pins. A
0.47µF is recommended between the HS and BST pins. A 0.1µF is recommended between BST2 and CGND.
SOFT-START CAPACITOR
The LM3433 integrates circuitry that, when used in conjunction with the SS pin, will slow the current ramp on
start-up. The SS pin is used to tailor the soft-start for a specific application. A capacitor value of 0.1µF on the SS
pin will yield a 12mS soft start time. For most applications soft start is not needed.
ENABLE OPERATION
The EN pin of the LM3433 is designed so that it may be controlled using a 1.6V or higher logic signal. If the
enable function is not used, the EN pin may be tied to VIN or left open. This pin is pulled to VIN internally through
a 100k pull up resistor.
PWM DIM OPERATION
The DIM pin of the LM3433 is designed so that it may be controlled using a 1.6V or higher logic signal. The
PWM frequency easily accomodates more than 40kHz dimming and can be much faster if needed. If the PWM
DIM pin is not used, tie it to CGND or leave it open. The DIM pin is tied to CGND internally through a 100k pull
down resistor.
LAYOUT CONSIDERATIONS
The LM3433 is a high performance current driver so attention to layout details is critical to obtain maximum
performance. The most important PCB board design consideration is minimizing the loop comprised by the main
FET, synchronous FET, and their associated decoupling capacitor(s). Place the VCC bypass capacitor as near as
possible to the LM3433. Place the PWM dimming/shunt FET as close to the LED as possible. A ground plane
should be used for power distribution to the power FETs. Use a star ground between the LM3433 circuitry, the
synchronous FET, and the decoupling capacitor(s). The EP contact on the underside of the package must be
connected to VEE. The two lines connecting the sense resistor to CSN and CSP must be routed as a differential
pair directly from the resistor. A Kelvin connection is recommended. It is good practice to route the DIMO/DIMR,
HS/HO, and LO/LS lines as differential pairs. The most important PCB board design consideration is minimizing
the loop comprised by the main FET, synchronous FET, and their associated decoupling capacitor(s). Optimally
this loop should be orthogonal to the ground plane.
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Product Folder Links: LM3433
11
LM3433
SNVS535B – OCTOBER 2007 – REVISED MARCH 2008
www.ti.com
Application Information
0.1
PF
44.2k
LED ANODE
ADJ
ADJ
EN
EN
DIM
DIM
DMO
TON
DIMR
BST2
CSP
270 pF
-12V
CSN
Q3
Q1
HO
LED
HS
0.47 PF
LM3433
BST
LED CATHODE
Q2
LO
22 PF
LS
SS
COMP
4.7 PF
VEE
VIN
100
CGND
+3.3V
0.01
6 PH
VCC
2.2 PF
GND
0.01
PF
0.1
PF
-12V
Figure 2. 2A to 6A Output Application Circuit
0.1
PF
68.1k
Q1
LED ANODE
Q2
ADJ
EN
EN
DIM
DIM
DIMR
ADJ
DMO
TON
BST2
CSP
560 pF
-12V
CSN
Q5
HO
Q6
LED
HS
0.47 PF
LM3433
BST
Q3
Q4
12 PH
0.0075
LED CATHODE
LO
22 PF X 2
LS
SS
4.7 PF
COMP
VIN
100
VEE
+5V
CGND
VCC
GND
0.01
PF
0.1
PF
2.2 PF
-12V
Figure 3. 2A to 14A Output Application Circuit
12
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Product Folder Links: LM3433
LM3433
www.ti.com
SNVS535B – OCTOBER 2007 – REVISED MARCH 2008
Table 1. Some Recommended Inductors (Others May Be Used)
Manufacturer
Inductor
Contact Information
Coilcraft
GA3252-AL and SER1360 series
www.coilcraft.com
800-322-2645
Coiltronics
HCLP2 series
www.coiltronics.com
Pulse
PB2020 series
www.pulseeng.com
Table 2. Some Recommended Input/Bypass Capacitors (Others May Be Used)
Manufacturer
Capacitor
Contact Information
Vishay Sprague
293D, 592D, and 595D series tantalum
www.vishay.com
407-324-4140
Taiyo Yuden
High capacitance MLCC ceramic
www.t-yuden.com
408-573-4150
Cornell Dubilier
ESRD seriec Polymer Aluminum Electrolytic
SPV and AFK series V-chip series
www.cde.com
MuRata
High capacitance MLCC ceramic
www.murata.com
Table 3. Some Recommended MOSFETs (Others May Be Used)
Manufacturer
Inductor
Contact Information
Siliconix
Si7386DP (Main FET, DIM FET)
Si7668ADP (Synchronous FET)
www.vishay.com/company/brands/sili
conix/
ON Semiconductor
NTMFS4841NHT1G (Main FET, Synchronous FET, DIM
FET)
www.onsemi.com
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Product Folder Links: LM3433
13
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