Rohm BR93LC66 4,096-bit serial electrically erasable prom Datasheet

Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
•• Features
Low power CMOS Technology
• 256 × 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
– 3mA (max.) active current: 5V
– 5µA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
– Default to write-disable state at power up
– Software instructions for write-enable / disable
– Vcc lockout inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention
•Pin assignments
CS
1
SK
2
DI
3
BR93LC66 /
BR93LC66RF
DO 4
8
VCC
NC 1
7
N.C.
VCC 2
6
N.C.
CS 3
5
GND
SK
4
BR93LC66F /
BR93LC66FV
8
N.C.
7
GND
6
DO
5
DI
•Pin descriptions
Pin
Name
Function
CS
Chip select input
SK
Serial clock input
DI
DO
Start bit, operating code, address, and serial
data input
Serial data output, READY / BUSY internal
status display output
GND
Ground
N.C.
Not connected
N.C.
Not connected
VCC
Power supply
•TheOverview
BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and
data read from it and written to it.
Operation control is performed using five types of commands. The commands, addresses, and data are input
through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or
BUSY) can be output from the DO pin.
1
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
•Block diagram
Power supply
CS
voltage detector
Command code
Control
High voltage
Write disable
SK
generator
Clock generation
Address
DI
Address
8bit
Command
buffer
decoder
Data
R/W
8bit
register
4096bit
16bit
register
DO
amplifier
Dummy bit
•Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
VCC
– 0.3 ~ + 6.5
V
Applied voltage
500∗1
BR93LC66
Power
dissipation BR93LC66F / RF
BR93LC66FV
350∗2
Pd
mW
300∗3
Storage temperature
Tstg
Operating temperature
Topr
—
Terminal voltage
– 65 ~ + 125
°C
– 40 ~ + 85
°C
– 0.3 ~ VCC + 0.3
V
∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
•Recommended operating conditions (Ta = 25°C)
Parameter
Power supply
voltage
Input voltage
2
Writing
Reading
Symbol
VCC
VIN
Min.
Typ.
Max.
Unit
2.7
—
5.5
V
2.0
—
5.5
V
0
—
VCC
V
EEPROM array
16bit
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
•Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V
CC
Parameter
Symbol
Input low level voltage
Min.
VIL
– 0.3
= 5V ± 10%)
Typ.
Max.
Unit
Conditions
—
0.8
V
—
Input high level voltage
VIH
2.0
— VCC + 0.3
V
Output low level voltage 1
VOL1
—
—
V
Output high level voltage 1
VOH1
2.4
—
—
V
IOH = – 0.4mA
Output low level voltage 2
VOL2
—
—
0.2
V
IOL = 10µA
Output high level voltage 2
VOH2
VCC – 0.4 —
—
V
IOH = – 10µA
0.4
—
IOL = 2.1mA
Input leakage current
ILI
– 1.0
—
1.0
µA
VIN = 0V ~ VCC
Output leakage current
ILO
– 1.0
—
1.0
µA
VOUT = 0V ~ VCC, CS = GND
Operating current
dissipation 1
Operating current
dissipation 2
ICC1
—
1.5
3
mA
VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, WRITE
ICC2
—
0.7
1.5
mA
VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, READ
Standby current
ISB
—
1.0
5
µA
CS = SK = DI = GND, DO = OPEN
(unless otherwise noted, Ta = – 40 to 85°C, VCC = 3V ± 10%)
Parameter
Symbol
Input low level voltage
VIL
Input high level voltage
VIH
Output low level voltage
VOL
Output high level voltage
VOH
Min.
Unit
Conditions
V
—
VCC + 0.3
V
—
—
0.2
V
IOL = 10µA
VCC – 0.4 —
—
V
IOH = – 10µA
– 0.3
Typ.
— 0.15 × VCC
0.7 × VCC —
—
Max.
Input leakage current
ILI
– 1.0
—
1.0
µA VIN = 0V ~ VCC
Output leakage current
Operating current
dissipation 1
Operating current
dissipation 2
ILO
– 1.0
—
1.0
µA VOUT = 0V ~ VCC, CS = GND
ICC1
—
0.5
2
mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, WRITE
ICC2
—
0.2
1
mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, READ
Standby current
ISB
—
0.4
3
µA CS = SK = DI = GND, DO = OPEN
•Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V
CC
Parameter
Symbol
Input low level voltage
VIL
Input high level voltage
VIH
Output low level voltage
VOL
Output high level voltage
VOH
Min.
Unit
Conditions
— 0.15 × VCC
V
—
0.7 × VCC — VCC + 0.3
V
—
– 0.3
—
Typ.
Max.
= 2.0V)
—
0.2
V
IOL = 10µA
VCC – 0.4 —
—
V
IOH = – 10µA
Input leakage current
ILI
– 1.0
—
1.0
µA
VIN = 0V ~ VCC
Output leakage current
ILO
– 1.0
—
1.0
µA
VOUT = 0V ~ VCC, CS = 0V
Operating current
dissipation 2
ICC2
—
0.2
1
mA
VIN = VIH / VIL, DO = OPEN, fsk = 200kHz,
READ
Standby current
ISB
—
0.4
3
µA
CS = SK = DI = 0V, DO = OPEN
3
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
operation
•(1)Circuit
Command mode
With these ICs, commands are not
Start Operating
Address
Data
Command
code
bit
recognized or acted upon until the
start bit is received. The start bit is
1
10
A7 ~ A0
—
Read (READ)∗1
taken as the first “1” that is received
1
00
11XXXXXX
—
Write Enabled (WEN)
after the CS pin rises.
1
01
A7 ~ A0
D15 ~ D0
Write (WRITE)∗2
∗1 After setting of the read command
2
∗
1
00
01XXXXXX D15 ~ D0
Write to All Addresses (WRAL)
and input of the SK clock, data corre1
00
00XXXXXX
—
Write
Disabled
(WDS)
sponding to the specified address is
3
∗
1
11
A7 ~ A0
—
output, with data corresponding to upErase (ERASE)
per addresses then output in se1
00
10XXXXXX
—
Chip Erase (ERAL)∗3
quence. (Auto increment function)
X: Either VIH or VIL
∗2 When the write or write all addresses command is executed, all data in the selected memory cell is erased automatically, and the input data is written to
the cell.
∗3 These modes are optional modes. Please contact Rohm for information on operation timing.
(2) Operation timing characteristics
(unless otherwise noted, Ta = – 40 to 85°C, VCC = 5V ± 10%)
Parameter
Symbol
Min.
Typ.
Max.
Unit
SK clock frequency
fSK
—
—
1
MHz
SK "H" time
tSKH
450
—
—
ns
SK "L" time
—
—
ns
tSKL
450
CS "L" time
tCS
450
—
—
ns
CS setup time
tCSS
50
—
—
ns
DI setup time
tDIS
100
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
100
—
—
ns
Data "1" output delay time
tPD1
—
—
500
ns
Data "0" output delay time
tPD0
—
—
500
ns
Time from CS to output confirmation
tSV
—
—
500
ns
tDF
—
—
100
ns
tE / W
—
—
10
ms
Time from CS to output High impedance
Write cycle time
4
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
For low voltage operation (unless otherwise noted, Ta = – 40 to 85°C, VCC = 3V ± 10%)
Parameter
Min.
Typ.
Max.
Unit
fSK
—
—
250
kHz
SK "H" time
tSKH
1
—
—
µs
SK "L" time
tSKL
1
—
—
µs
CS "L" time
tCS
1
—
—
µs
CS setup time
tCSS
200
—
—
ns
DI setup time
tDIS
400
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
400
—
—
ns
Data "1" output delay time
tPD1
—
—
2
µs
Data "0" output delay time
tPD0
—
—
2
µs
Time from CS to output confirmation
tSV
—
—
2
µs
Time from CS to output High impedance
tDF
—
—
400
ns
tE / W
—
—
25
ms
SK clock frequency
Write cycle time
Symbol
When reading at low voltage (Unless otherwise noted, Ta = – 40 to 85°C, VCC = 2.0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
SK clock frequency
fSK
SK "H" time
tSKH
—
—
200
kHz
2
—
—
µs
SK "L" time
CS "L" time
tSKL
2
—
—
µs
tCS
2
—
—
µs
CS setup time
tCSS
400
—
—
ns
DI setup time
tDIS
800
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
800
—
—
ns
Data "1" output delay time
tPD1
—
—
4
µs
Data "0" output delay time
tPD0
—
—
4
µs
Time from CS to output High impedance
tDF
—
—
800
ns
䊊 Not designed for radiation resistance.
5
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
(3) Timing chart
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
tPD0
tPD1
tDF
DO (READ)
tDF
STATUS VALID
DO (WRITE)
• Data is acquired from DI in synchronization with the SK rise.
• During a reading operation, data is output from DO in synchronization with the SK rise.
• During a writing operation, a Status Valid (READY or BUSY) is valid from the time CS is HIGH until time tcs after CS falls following the input of a write
command and before the output of the next command start bit. Also, CS must be in a HIGH-Z state when DO is LOW.
• After the completion of each mode, make sure that CS is set to LOW, to reset the internal circuit, before changing modes.
Fig.1 Data synchronization timing
6
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
(4) Reading (Figure 2)
When the read command is acknowledged, the data
(16 bits) for the input address is output serially. The
data is synchronized with the SK rise during A0 acquisition and a “0” (dummy bit) is output. All further data is
output in synchronization with the SK pulse rises.
(5) Write enable (Figure 3)
These ICs are set to the write disabled state by the internal reset circuit when the power is turned on.
Therefore, before performing a write command, the
write enable command must be executed. When this
command is executed, it remains valid until a write
disable command is issued or the power supply is cut
off. However, read commands can be used in either
the write enable or write disable state.
CS
(6) Write (Figure 4)
This command writes the input 16-bit data (D15 to D0)
to the specified address (A7 to A0). Actual writing of
the data begins after CS falls (following the 27th clock
pulse after the start bit input), and DO is in the Acquire
state.
STATUS is not detected if CS = LOW after the time
tE / W. When STATUS is detected (CS = HIGH), no commands are accepted while DO is LOW (BUSY). Therefore, no commands should be input during this period.
∗1
SK
DI
1
2
1
1
4
0
11
A7
A6
12
27
28
A0
A1
∗2
DO
0
D15 D14
D1
D0
D15
D14
High-Z
∗1 If the first data input following the rise of the start bit CS is "1", the start bit is acknowledged. Also, if a "1" is input following several zeroes in succession,
the "1" is recognized as the start bit, and subsequent operation commences. This applies also to all commands described subsequently.
∗2 Address auto increment function: These ICs are equipped with an address auto increment function which is effective only during reading operations.
With this function, if the SK clock is input following execution of one of the above reading commands, data is read from upper addresses in succession.
CS is held in HIGH state during automatic incrementing.
Fig.2 Read cycle timing (READ)
CS
SK
DI
1
0
0
1
1
DO
High-Z
Fig.3 Write enable cycle timing
7
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
CS
tCS
1
SK
DI
1
2
0
4
A7
1
A6
A1
11
12
A0
D15
STATUS
27
D14
D1
D0
tSV
DO
BUSY READY
High-Z
tE / W
Fig.4 Write cycle timing (WRITE)
CS
tCS
1
SK
DI
1
2
0
5
0
12
D15 D14
0
STATUS
27
D1
D0
tSV
DO
BUSY READY
High-Z
tE / W
Fig.5 Write all address cycle timing (WRAL)
(STATUS)
After time tCS following the fall of CS, after input of the
write command), if CS is set to HIGH, the write execute
= BUSY (LOW) and the command wait status READY
(HIGH) are output.
If in the command wait status (STATUS = READY), the
next command can be performed within the time tE / W.
Thus, if data is input via SK and DI with CS = HIGH in
the t E / W period, erroneous operations may be performed. To avoid this, make sure that DI = LOW when
CS = HIGH. (Caution is especially important when
common input ports are used.) This applies to all of the
write commands.
(7) All address write (Figure 5)
With this command, the input 16-bit data is written
simultaneously to all of the addresses (128 words).
Rather than writing one word at a time, in succession,
data is written all at one time, enabling a write time of
t E / W.
(8) Write disable (Figure 6)
When the power supply is turned on, the IC enters the
write disable status. Similarly, when a write disable
command is issued, the IC enters the same status.
When in this status, all write commands are ignored,
but read commands may be executed.
In the write enable status, writing begins even if a write
command is entered accidentally. To prevent errors of
this type, we recommend executing a write disable
command after writing has been completed.
CS
SK
DI
1
0
0
0
0
DO
High-Z
Fig.6 Write disable cycle timing (WDS)
8
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
notes
•(1)Operation
Cancelling modes
〈READ〉
Start bit
Operating code
Address
Data
1bit
2bits
8bits
16bits
Cancel can be performed for the entire read mode space
Cancellation method: CS LOW
〈WRITE, WRAL〉
Start bit
Operating code
Address
Data
1bit
2bits
8bits
16bits
a
tE / W
b
∗
a: Canceled by setting CS LOW or VCC OFF ( )
b: Cannot be canceled by any method. If VCC is set to OFF during this time, the data in the
designated address is not secured.
: VCC OFF (VCC is turned off after CS is set to LOW)
∗
Fig.7
9
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
(2) Timing in the standby mode
As shown in Figure 8, during standby, if CS rises when
SK is HIGH, the DI state may be read on the rising
edge. If this happens, and DI is HIGH, this is taken to
be the start bit, causing a bit error (see point “a” in
Figure 8).
Make sure all inputs are LOW during standby or when
turning the power supply on or off (see Figure 9).
Point a: Start bit position during erroneous operation
Point b: Actual position of start bit
SK
To prevent erroneous writing, these ICs are equipped
with a POR (Power On Reset) circuit, but in order to
achieve operation at a low power supply, VCC is set to
operate at approximately 1.3V. After the POR has been
activated, writing is disabled, but if CS is set to HIGH,
writing may be enabled because of noise or other factors. However, the POR circuit is effective only when
the power supply is on, and will not operate when the
power is off.
Also, to prevent erroneous writing at low voltages,
these ICs are equipped with a built-in circuit (VCC-lockout circuit) which resets the write command if V CC
drops to approximately 2V or lower (typ.).
CS
+ 5V
VCC
GND
0
DI
1
+ 5V
a
b
CS
GND
Fig.8 Timing during erroneous operation
Bad example
Good example
(Bad example) Here, the CS pin is pulled up to VCC. In this case, CS is
HIGH (active state). Please be aware that the EEPROM
SK
may perform erroneous operations or write erroneous
data because of noise or other factors. Also, be aware
that this may occur ever if the CS input is at High-2.
(Good example) In this case, CS is LOW when the power supply is turned
CS
on or off.
DI
0
1
b
Fig.9 Timing during normal operation
(3) Precautions when turning power on and off
When turning the power supply on and off, make sure
CS is set to LOW (see Figure 10).
When CS is HIGH, the EEPROM enters the active
state. To avoid this, make sure CS is set to LOW (disable mode) when turning on the power supply.
(When CS is LOW, all input is cancelled.)
When the power supply is turned off, the low power
state can continue for a long time because of the
capacity of the power supply line. Erroneous operations and erroneous writing can occur at such times for
the same reasons as described above. To avoid this,
make sure CS is set to LOW before turning off the
power supply.
10
Fig.10
(4) Clock (SK) rise conditions
If the clock pin (SK) signal of the BR93LC66 / BR93LC66A has a long rise time (tr) and if noise on the signal
line exceeds a certain level, erroneous operation can
occur due to erroneous counts in the clock. To prevent
this, a Schmitt trigger is built into the SK input of the
BR93LC66. The hysteresis amplitude of this circuit is
set to approximately 0.2V, so if the noise exceeds the
SK input, the noise amplitude should be set to 0.2VP-P
or lower. Furthermore, rises and falls in the clock input
should be accelerated as much as possible.
(5) Power supply noise
The BR93LC66 discharge high volumes of high voltage
when a write is completed. The power supply may fluctuate at such times. Therefore, make sure a capacitor
of 1000pF or greater is connected between VCC (Pin 8)
and GND (Pin 5).
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
(6) Connecting DI and DO directly
The BR93LC66 have an independent input pin (DI) and
output pin (DO). These are treated as individual signals
on the timing chart but can be controlled through one
control line.
Control can be initiated on a single control line by
inserting a resistor R.
µ - COM
BR93LC66
I / O PORT
DI
R
DO
Fig.11 Common connections for
the DI and DO control line
1) Data collision between the µ-COM output and the
DO output
Within the input and output timing of the BR93LC66 the
drive from the µ-COM output to the DI input and a signal output from the DO output can be emitted at the
same time. This happens only for the 1 clock cycle (a
dummy bit “0” is output to the DO pin) which acquires
the AO address data during a read cycle. When the
address data AO = 1, the µ-COM output becomes a
direct current source for the DO pin.
The resistor R is the only resistance which limits this
current. Therefore, a resistor with a value which satisfies the µ-COM and the BR93LC66 current capacity is
required. When using a single control line, when a
dummy bit “0” is output to the DO, the µ-COM I / O
address data AO is also output. Therefore, the dummy
bit cannot be detected.
2) Feedback to the DI input from the DO output
Data is output from the DO pin and then feeds back
into the DI input through the resistor R. This happens
when:
• DO data is output during a read operation
• A READY / BUSY signal is output during WRITE or
WRAL operation
Such feedback does not cause problems in the basic
operation of the BR93LC66.
The µ-COM input level must be adequately maintained
for the voltage drop at R which is caused by the total
input leakage current for the µ-COM and the BR93LC66.
In the state in which SK is input, when the READY /
BUSY function is used, make sure that CS is dropped
to LOW within four clock pulses of the output of the
READY signal HIGH and the standby mode is restored.
For input after the fifth clock pulse, the READY HIGH
will be taken as the start bit and WDS or some other
mode will be activated, depending on the DI state.
11
Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
•External dimension (Units: mm)
BR93LC66
BR93LC66F / RF
9.3 ± 0.3
5.0 ± 0.2
5
0.11
0.3 ± 0.1
0.5 ± 0.1
2.54
5
1
4
0°~15°
1.27
0.15 ± 0.1
1.5 ± 0.1
7.62
8
4.4 ± 0.2
4
0.51Min.
3.2 ± 0.2 3.4 ± 0.3
1
6.2 ± 0.3
6.5 ± 0.3
8
0.4 ± 0.1
0.3Min.
0.15
SOP8
DIP8
BR93LC66FV
8
5
1
4
(0.52)
0.15 ± 0.1
4.4 ± 0.2
0.1
1.15 ± 0.1
6.4 ± 0.3
3.0 ± 0.2
0.65 0.22 ± 0.1
0.3Min.
0.1
SSOP-B8
12
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