Diodes BC847BW-7-F Npn surface mount small signal transistor Datasheet

SPICE MODELS: BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW
BC846AW - BC848CW
Lead-free Green
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
·
Ideally Suited for Automatic Insertion
Complementary PNP Types Available (BC856W-BC858W)
C
Lead Free/RoHS Compliant (Note 3 )
"Green" Device (Note 4 and 5)
B C
Mechanical Data
·
·
·
·
·
·
·
·
·
SOT-323
A
For Switching and AF Amplifier Applications
B
E
G
Case: SOT-323
H
Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability
Classification Rating 94V-0
K
Moisture Sensitivity: Level 1 per J-STD-020C
M
J
Terminals: Solderable per MIL-STD-202, Method 208
D
F
L
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Pin Connections: See Diagram
Marking Codes (See Table Below & Diagram on Page 2)
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0°
8°
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Marking Code (Note 2)
Type
Marking
Type
Marking
BC846AW
K1Q
BC847CW
K1M
BC846BW
K1R
BC848AW
K1J, K1E, K1Q
BC847AW
K1E, K1Q
BC848BW
K1K, K1F, K1R
BC847BW
K1F, K1R
BC848CW
K1L, K1M
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
BC846
BC847
BC848
VCBO
80
50
30
V
Collector-Emitter Voltage
BC846
BC847
BC848
VCEO
65
45
30
V
BC846, BC847
BC848
VEBO
6.0
5.0
V
Emitter-Base Voltage
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Emitter Current
IEM
200
mA
Power Dissipation (Note 1)
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-65 to +150
°C
Collector Current
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC846W.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" Policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php.
5. Product manufactured with date code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior t o date
code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Min
Typ
Max
Unit
BC846
BC847 V(BR)CBO
BC848
Symbol
80
50
30
—
—
—
—
—
—
V
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 6) BC846
BC847 V(BR)CEO
BC848
65
45
30
—
—
—
—
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
(Note 4)
6
5
—
—
V
IE = 1mA, IC = 0
hFE
110
200
420
180
290
520
220
450
800
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 6)
VCE(SAT)
—
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 6)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 6)
VBE(ON)
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.0
4.5
pF
VCB = 10V, f = 1.0MHz
NF
—
—
10
dB
VCE = 5V, IC = 200µA,
RS = 2.0kW,
f = 1.0kHz, Df = 200Hz
Collector-Base Breakdown Voltage (Note 6)
DC Current Gain
BC846, BC847 V
(BR)EBO
BC848
Current Gain Group A
B
(Note 6) C
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Ordering Information
Test Condition
(Note 5 & 7)
Device
Packaging
Shipping
BC84xxW-7-F*
SOT-323
3000/Tape & Reel
*xx = device type, e.g. BC846AW-7.
Note:
5. Product manufactured with date code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
date code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
6. Short duration pulse test to minimize self-heating effect.
7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
XXX
XXX = Product Type Marking Code (See Page 1), e.g. K1Q = BC846AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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0.4
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
IC
IB = 20
0.3
TA = 25°C
0.2
TA = 150°C
0.1
TA = -50°C
0
0
0
25
50
75
100
125
150
200
175
0.1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
TA = 150°C
fT, GAIN BANDWIDTH PRODUCT (MHz)
hFE, DC CURRENT GAIN
1000
1
TA = 25°C
100
TA = -50°C
10
VCE = 5V
100
10
1
1
10
1
1000
100
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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