TI1 LMV611 1.4 mhz, low power general purpose, 1.8v operational amplifier Datasheet

LMV611, LMV612, LMV614
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
LMV611 Single/LMV612 Dual/LMV614 Quad 1.4 MHz, Low Power General Purpose, 1.8V
Operational Amplifiers
Check for Samples: LMV611, LMV612, LMV614
FEATURES
DESCRIPTION
•
The LMV611/LMV612/LMV614 are single, dual, and
quad low voltage, low power Operational Amplifiers.
They are designed specifically for low voltage general
purpose applications. Other important product
characteristics are, rail to-rail input/output, low supply
voltage of 1.8V and wide temperature range. The
LMV611/LMV612/LMV614 input common mode
extends 200mV beyond the supplies and the output
can swing rail-to-rail unloaded and within 30mV with
2kohm load at 1.8V supply. The LMV611/2/4
achieves a gain bandwidth of 1.4MHz while drawing
100 uA (typ) quiescent current.
1
2
•
•
•
•
•
•
•
(Typical 1.8V Supply Values; Unless Otherwise
Noted)
Ensured 1.8V, 2.7V and 5V Specifications
Output Swing
– w/600Ω Load 80mV from Rail
– w/2kΩ Load 30mV from Rail
VCM 200mV Beyond Rails
Supply Current (Per Channel) 100μA
Gain Bandwidth Product 1.4MHz
Maximum VOS 4.0mV
Temperature Range −40°C to 125°C
APPLICATIONS
•
•
•
•
•
•
•
Consumer Communication
Consumer Computing
PDAs
Audio Pre-Amp
Portable/Battery-Powered Electronic
Equipment
Supply Current Monitoring
Battery Monitoring
The industrial-plus temperature range of −40°C to
125°C allows the LMV611/LMV612/LMV614 to
accommodate a broad range of extended
environment applications.
The LMV611 is offered in the tiny 5-Pin SC70
package, the LMV612 in space saving 8-Pin VSSOP
and SOIC, and the LMV614 in 14-Pin TSSOP and
SOIC. These small package amplifiers offer an ideal
solution for applications requiring minimum PCB
footprint. Applications with area constrained PC board
requirements include portable and battery operated
electronics.
Typical Application
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012–2013, Texas Instruments Incorporated
LMV611, LMV612, LMV614
SNOSC69B – APRIL 2012 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
Machine Model
ESD Tolerance (3)
200V
Human Body Model
2000V
Supply Voltage (V+–V −)
6V
Differential Input Voltage
± Supply Voltage
Voltage at Input/Output Pins
V++0.3V, V--0.3V
Storage Temperature Range
−65°C to 150°C
Junction Temperature
(4)
150°C
For soldering specifications see product folder at www.ti.com and SNOA549
(1)
(2)
(3)
(4)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Operating Ratings (1)
Supply Voltage Range
1.8V to 5.5V
−40°C to 125°C
Temperature Range
Thermal Resistance (θJA)
(1)
2
5-Pin SC70
414°C/W
5-Pin SOT-23
265°C/W
8-Pin VSSOP
235°C/W
8-Pin SOIC
175°C/W
14-Pin TSSOP
155°C/W
14-Pin SOIC
127°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
1.8V DC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 1.8V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
VOS
Typ (3)
Max (2)
Units
LMV611 (Single)
1
4
mV
LMV612 (Dual)
LMV614 (Quad)
1
5.5
Parameter
Input Offset Voltage
Condition
Min (2)
TCVOS
Input Offset Voltage Average
Drift
5.5
IB
Input Bias Current
15
IOS
Input Offset Current
13
IS
Supply Current (per channel)
103
CMRR
Common Mode Rejection Ratio
PSRR
CMVR
AV
VO
IO
(1)
(2)
(3)
(4)
(5)
Power Supply Rejection Ratio
Input Common-Mode Voltage
Range
Large Signal Voltage Gain
LMV611 (Single)
LMV611, 0 ≤ VCM ≤ 0.6V
1.4V ≤ VCM ≤ 1.8V (4)
60
78
LMV612 and LMV614
0 ≤ VCM ≤ 0.6V
1.4V ≤ VCM ≤ 1.8V (4)
55
76
−0.2V ≤ VCM ≤ 0V
1.8V ≤ VCM ≤ 2.0V
50
μV/°C
nA
nA
185
μA
dB
1.8V ≤ V+ ≤ 5V
72
100
−
−0.2 to 2.1
dB
+
For CMRR Range TA = 25°C
≥ 50dB
TA −40°C to
85°C
V −0.2
V−
V+
TA = 125°C
V− +0.2
V+ −0.2
RL = 600Ω to 0.9V,
VO = 0.2V to 1.6V, VCM = 0.5V
77
101
RL = 2kΩ to 0.9V,
VO = 0.2V to 1.6V, VCM = 0.5V
80
105
Large Signal Voltage Gain
LMV612 (Dual)
LMV614 (Quad)
RL = 600Ω to 0.9V,
VO = 0.2V to 1.6V, VCM = 0.5V
75
90
RL = 2kΩ to 0.9V,
VO = 0.2V to 1.6V, VCM = 0.5V
78
100
Output Swing
RL = 600Ω to 0.9V
VIN = ±100mV
1.65
RL = 2kΩ to 0.9V
VIN = ±100mV
1.75
Output Short Circuit Current (5)
mV
V +0.2
V
dB
dB
1.72
0.077
0.105
1.77
0.024
Sourcing, VO = 0V
VIN = 100mV
8
Sinking, VO = 1.8V
VIN = −100mV
9
V
0.035
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see Input Common-Mode Voltage Range specifications.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45mA over long term may adversely affect
reliability.
Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
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1.8V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 1.8V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
Parameter
SR
Slew Rate
GBW
Φm
Conditions
Typ (3)
Max (2)
Units
0.35
V/μs
Gain-Bandwidth Product
1.4
MHz
Phase Margin
67
deg
Gm
Gain Margin
7
dB
en
Input-Referred Voltage Noise
f = 10 kHz, VCM = 0.5V
60
nV/√Hz
in
Input-Referred Current Noise
f = 10 kHz
0.08
pA/√Hz
THD
Total Harmonic Distortion
f = 1kHz, AV = +1
RL = 600Ω, VIN = 1 VPP
0.023
Amp-to-Amp Isolation
See (5)
(1)
(2)
(3)
(4)
(5)
See
Min (2)
(4)
%
123
dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input referred, RL = 100kΩ connected to V+/2. Each amp excited in turn with 1kHz to produce VO = 3VPP (For Supply Voltages <3V, VO
= V+).
2.7V DC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
VOS
Parameter
Input Offset Voltage
Typ (3)
Max (2)
Units
LMV611 (Single)
1
4
mV
LMV612 (Dual)
LMV614 (Quad)
1
5.5
Condition
Min (2)
TCVOS
Input Offset Voltage Average
Drift
5.5
IB
Input Bias Current
15
IOS
Input Offset Current
8
IS
Supply Current (per channel)
CMRR
Common Mode Rejection Ratio
PSRR
(1)
(2)
(3)
(4)
4
Power Supply Rejection Ratio
105
LMV611, 0 ≤ VCM ≤ 1.5V
2.3V ≤ VCM ≤ 2.7V (4)
60
81
LMV612 and LMV614
0 ≤ VCM ≤ 1.5V
2.3V ≤ VCM ≤ 2.7V (4)
55
80
−0.2V ≤ VCM ≤ 0V
2.7V ≤ VCM ≤ 2.9V
50
mV
μV/°C
nA
nA
190
μA
dB
1.8V ≤ V+ ≤ 5V
VCM = 0.5V
74
100
dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see Input Common-Mode Voltage Range specifications.
Submit Documentation Feedback
Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
2.7V DC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See(1)
Symbol
VCM
Parameter
Input Common-Mode Voltage
Range
Condition
For CMRR
Range ≥ 50dB
TA = 25°C
Large Signal Voltage Gain
LMV611 (Single)
VO
(5)
V −0.2
Typ (3)
Max (2)
−0.2 to 3.0
V+ +0.2
V−
Units
V+
−
V
+
V −0.2
V +0.2
RL = 600Ω to 1.35V,
VO = 0.2V to 2.5V
87
104
RL = 2kΩ to 1.35V,
VO = 0.2V to 2.5V
92
110
Large Signal Voltage Gain
LMV612 (Dual)
LMV614 (Quad)
RL = 600Ω to 1.35V,
VO = 0.2V to 2.5V
78
90
RL = 2kΩ to 1.35V,
VO = 0.2V to 2.5V
81
100
Output Swing
RL = 600Ω to 1.35V
VIN = ±100mV
2.55
RL = 2kΩ to 1.35V
VIN = ±100mV
2.65
Output Short Circuit Current (5)
IO
−
TA = −40°C to
85°C
TA = 125°C
AV
Min (2)
dB
dB
2.62
0.083
0.110
V
2.675
0.025
Sourcing, VO = 0V
VIN = 100mV
30
Sinking, VO = 0V
VIN = −100mV
25
0.04
mA
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45mA over long term may adversely affect
reliability.
2.7V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.0V, VO = 1.35V and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
Parameter
Conditions
SR
Slew Rate
GBW
Gain-Bandwidth Product
Φm
Gm
en
Input-Referred Voltage Noise
f = 10 kHz, VCM = 0.5V
in
Input-Referred Current Noise
THD
Total Harmonic Distortion
Amp-to-Amp Isolation
See (5)
(1)
(2)
(3)
(4)
(5)
See
Min (2)
(4)
Typ (3)
Max (2)
Units
0.4
V/µs
1.4
MHz
Phase Margin
70
deg
Gain Margin
7.5
dB
57
nV/√Hz
f = 10 kHz
0.08
pA/√Hz
f = 1kHz, AV = +1
RL = 600Ω, VIN = 1VPP
0.022
%
123
dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input referred, RL = 100kΩ connected to V+/2. Each amp excited in turn with 1kHz to produce VO = 3VPP (For Supply Voltages <3V, VO
= V+).
Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
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5V DC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5V, V − = 0V, VCM = V+/2, VO = V+/2 and RL > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
VOS
Parameter
Typ (3)
Max (2)
Units
LMV611 (Single)
1
4
mV
LMV612 (Dual)
LMV614 (Quad)
1
5.5
Condition
Input Offset Voltage
Min (2)
TCVOS
Input Offset Voltage Average
Drift
5.5
IB
Input Bias Current
14
IOS
Input Offset Current
9
IS
Supply Current (per channel)
CMRR
Common Mode Rejection Ratio
PSRR
CMVR
Power Supply Rejection Ratio
Input Common-Mode Voltage
Range
116
0 ≤ VCM ≤ 3.8V
4.6V ≤ VCM ≤ 5.0V (4)
60
86
−0.2V ≤ VCM ≤ 0V
5.0V ≤ VCM ≤ 5.2V
50
78
1.8V ≤ V+ ≤ 5V
VCM = 0.5V
For CMRR Range TA = 25°C
≥ 50dB
TA = −40°C to
85°C
TA = 125°C
AV
VO
IO
(1)
(2)
(3)
(4)
(5)
6
Large Signal Voltage Gain
LMV611 (Single)
V −0.2
−0.2 to 5.3
nA
210
μA
nA
dB
dB
+
V +0.2
V+
V
−
V
+
V −0.3
V +0.3
88
102
RL = 2kΩ to 2.5V,
VO = 0.2V to 4.8V
94
113
Large Signal Voltage Gain
LMV612 (Dual)
LMV614 (Quad)
RL = 600Ω to 2.5V,
VO = 0.2V to 4.8V
81
90
RL = 2kΩ to 2.5V,
VO = 0.2V to 4.8V
85
100
Output Swing
RL = 600Ω to 2.5V
VIN = ±100mV
4.855
4.890
RL = 2kΩ to 2.5V
VIN = ±100mV
4.945
Output Short Circuit Current
35
−
RL = 600Ω to 2.5V,
VO = 0.2V to 4.8V
(5)
μV/°C
100
−
mV
0.120
dB
dB
0.160
4.967
0.037
LMV611, Sourcing, VO = 0V
VIN = 100mV
100
Sinking, VO = 5V
VIN = −100mV
65
V
0.065
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
For specified temperature ranges, see Input Common-Mode Voltage Range specifications.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45mA over long term may adversely affect
reliability.
Submit Documentation Feedback
Copyright © 2012–2013, Texas Instruments Incorporated
Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
www.ti.com
SNOSC69B – APRIL 2012 – REVISED MARCH 2013
5V AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5V, V − = 0V, VCM = V+/2, VO = 2.5V and R L > 1 MΩ.
Boldface limits apply at the temperature extremes. See (1)
Symbol
Parameter
SR
Slew Rate
GBW
Φm
Min (2)
Conditions
(4)
Max (2)
Units
0.42
V/µs
Gain-Bandwidth Product
1.5
MHz
Phase Margin
71
deg
Gm
Gain Margin
8
dB
en
Input-Referred Voltage Noise
f = 10 kHz, VCM = 1V
50
nV/√Hz
in
Input-Referred Current Noise
f = 10 kHz
0.08
pA/√Hz
THD
Total Harmonic Distortion
f = 1kHz, AV = +1
RL = 600Ω, VO = 1V PP
0.022
Amp-to-Amp Isolation
See (5)
(1)
(2)
(3)
(4)
(5)
See
Typ (3)
%
123
dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Applications section for information of temperature derating of the device. Absolute
Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or
electrically.
All limits are specified by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
Input referred, RL = 100kΩ connected to V+/2. Each amp excited in turn with 1kHz to produce VO = 3VPP (For Supply Voltages <3V, VO
= V+).
Connection Diagrams
Top View
Top View
1
Top View
8
+
V
OUT A
A
2
-
+
7
-IN A
OUT B
3
6
+IN A
+
V
Figure 1. 5-Pin SC70/SOT-23
(LMV611)
See Package Numbers DCK and
DBV
-
-IN B
B
4
5
+IN B
Figure 2. 8-Pin VSSOP/SOIC
(LMV612)
See Package Numbers DGK and
D
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Product Folder Links: LMV611 LMV612 LMV614
Figure 3. 14-Pin TSSOP/SOIC
(LMV614)
See Package Numbers PW and D
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Typical Performance Characteristics
Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
160
Supply Current
vs.
Supply Voltage (LMV611)
100
125°C
140
SUPPLY CURRENT (éA)
Sourcing Current
vs.
Output Voltage
VS = 5V
85°C
120
ISOURCE (mA)
10
100
25°C
80
-40°C
60
VS = 2.7V
1
VS = 1.8V
40
0.1
20
0
0
1
2
3
4
5
6
0.01
0.001
10
Output Voltage Swing
vs.
Supply Voltage
VS = 2.7V
1
VS = 1.8V
0.1
0.01
0.1
10
1
OUTPUT VOLTAGE PROXIMITY TO SUPPLY
VOLTAGE (mV ABSOLUTE VALUE)
Sinking Current
vs.
Output Voltage
10
ISINK (mA)
1
Figure 5.
VS = 5V
140
RL = 600:
130
NEGATIVE SWING
120
110
100
90
80
POSITIVE SWING
70
60
0
OUTPUT VOLTAGE REF TO GND (V)
OUTPUT VOLTAGE PROXIMITY TO
SUPPLY VOLTAGE (mV ABSOLUTE VALUE)
0.1
Figure 4.
100
0.01
0.001
0.01
OUTPUT VOLTAGE REFERENCED TO V+ (V)
SUPPLY VOLTAGE (V)
1
4
2
3
SUPPLY VOLTAGE (V)
Figure 6.
Figure 7.
Output Voltage Swing
vs.
Supply Voltage
Gain and Phase
vs.
Frequency
5
6
45
RL = 2k:
40
NEGATIVE SWING
35
30
25
POSITIVE SWING
20
0
1
2
3
5
4
6
SUPPLY VOLTAGE (V)
Figure 8.
8
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Figure 9.
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Product Folder Links: LMV611 LMV612 LMV614
LMV611, LMV612, LMV614
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
Gain and Phase
vs.
Frequency
Gain and Phase
vs.
Frequency
Figure 10.
Figure 11.
Gain and Phase
vs.
Frequency
CMRR
vs.
Frequency
90
VS = 5V
85
CMRR (dB)
80
VS = 2.7V
75
VS = 1.8V
70
65
60
10
100
Figure 12.
Figure 13.
PSRR
vs.
Frequency
Input Voltage Noise
vs.
Frequency
1000
INPUT VOLTAGE NOISE (nV/ Hz)
90
80
PSRR (dB)
10k
VS = 5V
+PSRR
70
-PSRR
60
50
40
30
10
1k
100
FREQUENCY (Hz)
100
1k
FREQUENCY (Hz)
10k
100
10
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 14.
Figure 15.
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Typical Performance Characteristics (continued)
Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
Input Current Noise
vs.
Frequency
THD
vs.
Frequency
10
1
INPUT CURRENT NOISE (pA/ Hz)
RL = 600:
AV = +1
THD (%)
1
0.1
1.8V
0.1
2.7V
5V
0.01
10
100
1k
10k
0.01
10
100k
10
10k
1k
100
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 16.
Figure 17.
THD
vs.
Frequency
Slew Rate
vs.
Supply Voltage
0.5
RL = 600:
AV = +10
SLEW RATE (V/Ps)
0.45
THD (%)
1
5V
0.1
FALLING EDGE
0.4
RISING EDGE
0.35
RL = 2k:
0.3
1.8V
AV = +1
2.7V
0.01
10
VIN = 1VPP
0.25
100
1k
10k
0
100k
1
3
4
5
6
Figure 19.
Small Signal Non-Inverting Response
Small Signal Non-Inverting Response
VS = 1.8V
OUTPUT SIGNAL
RL = 2 k:
VS = 2.7V
RL = 2 k:
(50 mV/DIV)
INPUT SIGNAL
Figure 18.
INPUT SIGNAL
OUTPUT SIGNAL
(50 mV/DIV)
10
2
SUPPLY VOLTAGE (V)
FREQUENCY (Hz)
TIME (2.5 Ps/DIV)
TIME (2.5 Ps/DIV)
Figure 20.
Figure 21.
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Typical Performance Characteristics (continued)
Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
Small Signal Non-Inverting Response
Large Signal Non-Inverting Response
VIN
INPUT SIGNAL
VS = 5V
OUTPUT SIGNAL
(50 mV/DIV)
(900 mV/div)
RL = 2 k:
VOUT
VS = 1.8V
RL = 2k:
AV = +1
TIME (10 Ps/div)
TIME (2.5 Ps/DIV)
Figure 22.
Figure 23.
Large Signal Non-Inverting Response
Large Signal Non-Inverting Response
VIN
(2.5 V/div)
(1.35V/DIV)
VIN
VOUT
VOUT
VS = 2.7V
VS = 5.0V
RL = 2 k:
RL = 2k:
AV = +1
AV = +1
TIME (10 Ps/div)
TIME (10 Ps/DIV)
Figure 24.
Figure 25.
Short Circuit Current
vs.
Temperature (Sinking)
Short Circuit Current
vs.
Temperature (Sourcing)
90
90
SHORT CIRCUIT CURRENT (mA)
SHORT CIRCUIT CURRENT (mA)
5V
80
5V
70
60
50
40
2.7V
30
20
1.8V
10
0
-40
10
60
TEMPERATURE
(°C)
110
80
70
60
50
40
2.7V
30
20
1.8V
10
0
-40
Figure 26.
10
60
TEMPERATURE
(°C)
110
Figure 27.
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Typical Performance Characteristics (continued)
Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
Offset Voltage
vs.
Common Mode Range
Offset Voltage
vs.
Common Mode Range
3
3
VS = 1.8V
VS = 2.7V
2.5
2.5
2
2
1
0.5
-40°C
25°C
-40°C
1.5
VOS (mV)
VOS (mV)
25°C
1.5
1
0.5
85°C
85°C
125°C
125°C
0
0
-0.5
-0.5
-1
-0.4
0
0.4
0.8
1.2
1.6
2
-1
-0.4
2.4
VCM (V)
0.1
0.6
1.1
1.6
2.1
2.6
3.1
VCM (V)
Figure 28.
Figure 29.
Offset Voltage
vs.
Common Mode Range
3
VS = 5V
2.5
2
VOS (mV)
-40°C
1.5
1
0.5
25°C
125°C
85°C
0
-0.5
-1
-0.4
0.6
1.6
2.6
3.6
4.6
5.6
VCM (V)
Figure 30.
12
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
APPLICATION NOTE
INPUT AND OUTPUT STAGE
The rail-to-rail input stage of this family provides more flexibility for the designer. The LMV611/LMV612/LMV614
use a complimentary PNP and NPN input stage in which the PNP stage senses common mode voltage near V−
and the NPN stage senses common mode voltage near V+. The transition from the PNP stage to NPN stage
occurs 1V below V+. Since both input stages have their own offset voltage, the offset of the amplifier becomes a
function of the input common mode voltage and has a crossover point at 1V below V+.
This VOS crossover point can create problems for both DC and AC coupled signals if proper care is not taken.
Large input signals that include the VOS crossover point will cause distortion in the output signal. One way to
avoid such distortion is to keep the signal away from the crossover. For example, in a unity gain buffer
configuration and with VS = 5V, a 5V peak-to-peak signal will contain input-crossover distortion while a 3V peakto-peak signal centered at 1.5V will not contain input-crossover distortion as it avoids the crossover point.
Another way to avoid large signal distortion is to use a gain of −1 circuit which avoids any voltage excursions at
the input terminals of the amplifier. In that circuit, the common mode DC voltage can be set at a level away from
the VOS cross-over point. For small signals, this transition in VOS shows up as a VCM dependent spurious signal in
series with the input signal and can effectively degrade small signal parameters such as gain and common mode
rejection ratio. To resolve this problem, the small signal should be placed such that it avoids the VOS crossover
point. In addition to the rail-to-rail performance, the output stage can provide enough output current to drive 600Ω
loads. Because of the high current capability, care should be taken not to exceed the 150°C maximum junction
temperature specification.
INPUT BIAS CURRENT CONSIDERATION
The LMV611/LMV612/LMV614 family has a complementary bipolar input stage. The typical input bias current (IB)
is 15nA. The input bias current can develop a significant offset voltage. This offset is primarily due to IB flowing
through the negative feedback resistor, RF. For example, if IB is 50nA and RF is 100kΩ, then an offset voltage of
5mV will develop (VOS = IB x RF). Using a compensation resistor (RC), as shown in Figure 31, cancels this effect.
But the input offset current (IOS) will still contribute to an offset voltage in the same manner.
Figure 31. Canceling the Offset Voltage due to Input Bias Current
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Typical Applications
HIGH SIDE CURRENT SENSING
The high side current sensing circuit (Figure 32) is commonly used in a battery charger to monitor charging
current to prevent over charging. A sense resistor RSENSE is connected to the battery directly. This system
requires an op amp with rail-to-rail input. The LMV611/LMV612/LMV614 are ideal for this application because its
common mode input range goes up to the rail.
Figure 32. High Side Current Sensing
HALF-WAVE RECTIFIER WITH RAIL-TO-GROUND OUTPUT SWING
Since the LMV611/LMV612/LMV614 input common mode range includes both positive and negative supply rails
and the output can also swing to either supply, achieving half-wave rectifier functions in either direction is an
easy task. All that is needed are two external resistors; there is no need for diodes or matched resistors. The half
wave rectifier can have either positive or negative going outputs, depending on the way the circuit is arranged.
In Figure 33 the circuit is referenced to ground, while in Figure 34 the circuit is biased to the positive supply.
These configurations implement the half wave rectifier since the LMV611/LMV612/LMV614 can not respond to
one-half of the incoming waveform. It can not respond to one-half of the incoming because the amplifier can not
swing the output beyond either rail therefore the output disengages during this half cycle. During the other half
cycle, however, the amplifier achieves a half wave that can have a peak equal to the total supply voltage. RI
should be large enough not to load the LMV611/LMV612/LMV614.
Figure 33. Half-Wave Rectifier with Rail-To-Ground Output Swing Referenced to Ground
Figure 34. Half-Wave Rectifier with Negative-Going Output Referenced to VCC
14
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
INSTRUMENTATION AMPLIFIER WITH RAIL-TO-RAIL INPUT AND OUTPUT
Some manufactures make a non-“rail-to-rail”-op amp rail-to-rail by using a resistive divider on the inputs. The
resistors divide the input voltage to get a rail-to-rail input range. The problem with this method is that it also
divides the signal, so in order to get the obtained gain, the amplifier must have a higher closed loop gain. This
raises the noise and drift by the internal gain factor and lowers the input impedance. Any mismatch in these
precision resistors reduces the CMRR as well. The LMV611/LMV612/LMV614 is rail-to-rail and therefore doesn’t
have these disadvantages.
Using three of the LMV611/LMV612/LMV614 amplifiers, an instrumentation amplifier with rail-to-rail inputs and
outputs can be made as shown in Figure 35.
In this example, amplifiers on the left side act as buffers to the differential stage. These buffers assure that the
input impedance is very high and require no precision matched resistors in the input stage. They also assure that
the difference amp is driven from a voltage source. This is necessary to maintain the CMRR set by the matching
R1-R2 with R3-R4. The gain is set by the ratio of R2/R1 and R3 should equal R1 and R4 equal R2. With both rail-torail input and output ranges, the input and output are only limited by the supply voltages. Remember that even
with rail-to-rail outputs, the output can not swing past the supplies so the combined common mode voltages plus
the signal should not be greater that the supplies or limiting will occur. For additional applications, see the
following TI application reports:
• AN-29 Application Report (SNOA624)
• AN-31 Application Report (SNLA140)
• AN-71 Application Report (SNOA652)
• AN-127 Application Report (SNVA516)
Figure 35. Rail-to-rail Instrumentation Amplifier
Simplified Schematic
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SNOSC69B – APRIL 2012 – REVISED MARCH 2013
www.ti.com
REVISION HISTORY
Changes from Revision A (March 2013) to Revision B
•
16
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 15
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PACKAGE OPTION ADDENDUM
www.ti.com
22-Mar-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package Qty
Drawing
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LMV611MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AE9A
LMV611MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AE9A
LMV611MG/NOPB
ACTIVE
SC70
DCK
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AVA
LMV611MGX/NOPB
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AVA
LMV612MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV6
12MA
LMV612MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV6
12MA
LMV612MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AD9A
LMV612MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
AD9A
LMV614MA/NOPB
ACTIVE
SOIC
D
14
55
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV614MA
LMV614MAX/NOPB
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV614MA
LMV614MT/NOPB
ACTIVE
TSSOP
PW
14
94
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV61
4MT
LMV614MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV61
4MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
22-Mar-2013
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Only one of markings shown within the brackets will appear on the physical device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
LMV611MF/NOPB
SOT-23
LMV611MFX/NOPB
LMV611MG/NOPB
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
3.2
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.2
1.4
4.0
8.0
Q3
DBV
5
1000
178.0
8.4
SOT-23
DBV
5
3000
178.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
SC70
DCK
5
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMV611MGX/NOPB
SC70
DCK
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
LMV612MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMV612MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV612MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV614MAX/NOPB
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
LMV614MTX/NOPB
TSSOP
PW
14
2500
330.0
12.4
6.95
8.3
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV611MF/NOPB
SOT-23
DBV
5
1000
210.0
185.0
35.0
LMV611MFX/NOPB
SOT-23
DBV
5
3000
210.0
185.0
35.0
LMV611MG/NOPB
SC70
DCK
5
1000
210.0
185.0
35.0
LMV611MGX/NOPB
SC70
DCK
5
3000
210.0
185.0
35.0
LMV612MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMV612MM/NOPB
VSSOP
DGK
8
1000
210.0
185.0
35.0
LMV612MMX/NOPB
VSSOP
DGK
8
3500
367.0
367.0
35.0
LMV614MAX/NOPB
SOIC
D
14
2500
367.0
367.0
35.0
LMV614MTX/NOPB
TSSOP
PW
14
2500
367.0
367.0
35.0
Pack Materials-Page 2
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