APTDC902U601G Single SiC Diode Power Module VRRM = 600V IF = 90A @ Tc = 80°C Application • • • • Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 11/12 • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 80°C TC = 25°C Max ratings Unit 600 V 90 1100 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDC902U601G – Rev 0 February, 2009 Absolute maximum ratings (per leg) APTDC902U601G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Test Conditions Min Tj = 25°C Tj = 175°C Tj = 25°C VR = 600V Tj = 175°C IF = 90A, VR = 300V di/dt =2200A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V IF = 90A Typ 1.6 2 450 900 Max 1.8 2.4 1800 9000 Unit V µA 126 nC 585 450 pF Thermal and package characteristics (per leg) Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Typ Max 0.31 175 125 100 4.7 80 Unit °C/W V °C N.m g 2-4 APTDC902U601G – Rev 0 February, 2009 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDC902U601G SP1 Package outline (dimensions in mm) www.microsemi.com 3-4 APTDC902U601G – Rev 0 February, 2009 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTDC902U601G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 180 1800 135 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=75°C TJ=175°C 90 TJ=125°C 45 TJ=175°C 1350 TJ=125°C 900 450 0 0 0.5 1 1.5 2 2.5 3 TJ=75°C 3.5 VF Forward Voltage (V) 0 200 TJ=25°C 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 3200 2400 1600 800 0 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDC902U601G – Rev 0 February, 2009 1