ON CPH6538 Bipolar transistor 30v, 0.7a, low vce(sat) npn dual cph6 Datasheet

Ordering number : ENA1757A
CPH6538
Bipolar Transistor
http://onsemi.com
30V, 0.7A, Low VCE(sat) NPN Dual CPH6
Features
•
Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package
•
VCEO=30V, IC=0.7A
•
Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A
High-speed switching tf=40ns(typ.)@IC=0.3A
Halogen free Compliance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
40
V
30
V
5
700
When mounted on ceramic substrate (600mm2×0.8mm) 1unit
V
mA
1.4
A
0.6
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-006
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
4
Marking
0.9
4F
1
2
0.95
LOT No.
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
CPH6538-TL-H
0.15
2.9
6
TL
3
0.4
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
Electrical Connection
6
5
4
1
2
3
CPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
62012 TKIM/70710EA TKIM TC-00002404 No. A1757-1/6
CPH6538
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
typ
ICBO
IEBO
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
Gain-Bandwidth Product
hFE
fT
VCE=2V, IC=50mA
540
Output Capacitance
Cob
3.3
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=200mA, IB=10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
300
IC=200mA, IB=10mA
Unit
max
100
nA
100
nA
800
MHz
pF
85
190
mV
0.9
1.2
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
40
V
IC=1mA, RBE=∞
30
V
V(BR)EBO
ton
IE=10μA, IC=0A
5
tstg
tf
See specified Test Circuit.
V
35
ns
255
ns
40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
RB
VR
RL
50Ω
+
470μF
+
220μF
VBE= --5V
VCC=12V
20IB1= --20IB2=IC=300mA
Ordering Information
Device
CPH6538-TL-H
memo
3,000pcs./reel
Pb Free and Halogen Free
5mA
A
1mA
400μA
200
200μA
100
0
0
600
500
400
300
--25°C
2mA
700
Ta=7
5°C
25°C
3mA
400
300
VCE=2V
7mA
Collector Current, IC -- mA
A
15m
A
30m
A 20mA
10m
IC -- VBE
800
50m
Collector Current, IC -- mA
500
Shipping
CPH6
IC -- VCE
700
600
Package
200
100
IB=0A
100
200
300
400
500
600
700
800
Collector-to-Emitter Voltage, VCE -- mV
900
1000
IT05082
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
IT05083
No. A1757-2/6
CPH6538
hFE -- IC
1000
VCE=2V
25°C
5
--25°C
3
2
100
1.0
2
3
2
5 7 10
3
5 7 100
2
3
Collector Current, IC -- mA
3
2
°C
7
5°C
=7
Ta
5°C
--2
3
2
10
1.0
2
5 7 10
3
2
5 7 100
3
2
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
5
3
2
3
5
7
2
10
3
Collector-to-Base Voltage, VCB -- V
2
s
op
er
ati
on
0.1
ms
Collector Current, IC -- A
s
0m
10
2
10
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Emitter Voltage, VCE -- V
2
3
5 7 100
2
3
5 7 1000
IT05085
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05087
fT -- IC
VCE=10V
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
Collector Current, IC -- mA
3
5 7 1000
IT05089
PC -- Ta
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.6
s
0μ
DC
3
50
7
5
s
5 7 10
IC / IB=20
ICP=1.4A
1m
3
VBE(sat) -- IC
0.7
IC=0.7A
2
IT05088
0μ
10
1.0
3
2
100
1.0
5
ASO
3
10
7
5
1000
7
2
5°C
--2
Collector Current, IC -- mA
f=1MHz
1.0
1.0
7
Ta=
IT05086
Cob -- VCB
10
5°C
3
2
0.1
1.0
5 7 1000
3
°C
7
5
5
25
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
25
100
7
5
Collector Current, IC -- mA
IC / IB=50
100
3
2
IT05084
VCE(sat) -- IC
1000
IC / IB=20
1.0
1.0
5 7 1000
Collector Dissipation, PC -- W
DC Current Gain, hFE
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta=75°C
VCE(sat) -- IC
1000
7
5
0.5
0.4
0.3
0.2
0.1
0
3
5
IT10759
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10000
No. A1757-3/6
CPH6538
Embossed Taping Specification
CPH6538-TL-H
No. A1757-4/6
CPH6538
Outline Drawing
CPH6538-TL-H
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1757-5/6
CPH6538
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PS No. A1757-6/6
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