Vishay B380C800DM Glass passivated ultrafast bridge rectifier Datasheet

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
~
~
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFM
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
DFM
IF(AV)
0.9 A
VRRM
65 V, 125 V, 200 V, 400 V, 600 V
IFSM
45 A
IR
10 μA
VF at IF = 0.9 A
1.0 V
TJ max.
125 °C
Diode variations
Quad
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Maximum repetitive peak reverse voltage
VRRM
65
125
200
400
600
V
Maximum RMS input voltage R- and C-load
VRMS
40
80
125
250
380
V
PARAMETER
Maximum average forward output current
for free air operation at TA = 45 °C
R- and L-load
C-load
0.9
IF(AV)
A
0.8
Maximum DC blocking voltage
VDC
65
125
200
400
600
V
Maximum peak working voltage
VRWM
90
180
300
600
900
V
100
200
350
650
1000
Maximum non-repetitive peak voltage
VRSM
Maximum repetitive peak forward surge current
IFRM
Peak forward surge current single sine-wave on rated load
IFSM
45
A
I2t
10
A2s
Rating for fusing at TJ = 125 °C (t < 100 ms)
Minimum series resistor C-load at VRMS = ± 10 %
+ 50 %
- 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
10
V
A
RT
1.0
2.0
4.0
8.0
12.0

CL
5000
2500
1000
500
200
μF
TJ
- 40 to + 125
°C
TSTG
- 40 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
0.9 A
Maximum reverse current at rated
repetitive peak voltage per diode
Revision: 16-Aug-13
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
VF
1.0
V
IR
10
μA
Document Number: 88533
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B40
C800DM
B80
C800DM
B125
C800DM
RJA
40
RJL
15
B250
C800DM
B380
C800DM
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.416
45
50
Tube
B380C800DM-E3/45
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0.6
0 - 10 µF
10 - 100 µF
> 100 µF
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
Peak Forward Surge Current (A)
Average Forward Output Current (A)
1.0
40
30
20
10
1.0 Cycle
0
0
0
20
40
60
80
100
120
100
10
0
140
Number of Cycles at 50 Hz
Fig. 1 - Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
0
0
20
40
60
80
100
120
140
Instantaneous Forward Surge Current (A)
Ambient Temperature (°C)
1.0
Average Forward Output Current (A)
TJ = 125 °C
10 ms Single Sine-Wave
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Derating Curves Output Rectified Current for
B250C800D...B360C800DM
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 16-Aug-13
Document Number: 88533
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
100
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
10
TJ = 100 °C
1
0.1
TJ = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.01
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Reverse Leakage Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
Revision: 16-Aug-13
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Document Number: 88533
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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