Freescale MPX5999D Integrated silicon pressure sensor on-chip signal conditioned, temperature compensated and calibrated Datasheet

Pressure
Freescale Semiconductor
MPX5999D
Rev 6, 09/2009
Integrated Silicon Pressure Sensor
On-Chip Signal Conditioned,
Temperature Compensated and
Calibrated
MPX5999D
0 to 1000 kPa (0 to 150 psi)
0.2 to 4.7 V Output
The MPX5999D piezoresistive transducer is a state-of-the-art pressure
sensor designed for a wide range of applications, but particularly for those
employing a microcontroller or microprocessor with A/D inputs. This
patented, single element transducer combines advanced micromachining
techniques, thin-film metallization and bipolar semiconductor processing to
provide an accurate, high level analog output signal that is proportional to
applied pressure.
Features
•
•
•
•
Temperature Compensated Over 0 to 85°C
Ideally Suited for Microprocessor or Microcontroller-Based Systems
Patented Silicon Shear Stress Strain Gauge
Durable Epoxy Unibody Element
ORDERING INFORMATION
Device Name
Case
No.
None
867
•
# of Ports
Single
Dual
Gauge
Pressure Type
Differential
Absolute
Device
Marking
Unibody Package
MPX5999D
•
UNIBODY PACKAGE
MPX5999D
CASE 867
© Freescale Semiconductor, Inc., 2005-2009. All rights reserved.
MPX5999D
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 5.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in
Figure 4 required to meet electrical specifications.)
Characteristic
Symbol
Min
Typ
Max
Unit
POP
0
—
1000
kPa
VS
4.75
5.0
5.25
Vdc
IO
—
7.0
10
mAdc
(0 to 85°C)
Voff
0.088
0.2
0.313
Vdc
(0 to 85°C)
VFSO
4.587
4.7
4.813
Vdc
(0 to 85°C)
VFSS
—
4.5
—
Vdc
V/P
—
4.5
—
mV/kPa
Pressure Range(1)
Supply
Voltage(2)
Supply Current
Zero Pressure
Offset(3)
Full Scale Output(4)
Full Scale
Span(5)
Sensitivity
Accuracy(6)
—
—
—
±2.5
%VFSS
Response Time(7)
tR
—
1.0
—
ms
Output Source Current at Full Scale Output
IO+
—
0.1
—
mAdc
—
—
20
—
ms
Warm-Up
(0 to 85°C)
Time(8)
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range.
3. Offset (Voff) is defined as the output voltage at the minimum rated pressure.
4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure.
5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
6. Accuracy (error budget) consists of the following:
Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range.
Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and
from the minimum or maximum operating temperature points, with zero differential pressure applied.
Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or
maximum rated pressure, at 25°C.
TcSpan: Output deviation over the temperature range of 0° to 85°C, relative to 25°C.
TcOffset: Output deviation with minimum rated pressure applied, over the temperature range of 0° to 85°C, relative to 25°C.
Variation from Nominal: The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS, at 25°C.
7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.
8. Warm-up Time is defined as the time required for the device to meet the specified output voltage after the pressure has been stabilized.
MPX5999D
2
Sensors
Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Rating
Symbol
Value
Unit
P1max
4000
kPa
Storage Temperature
Tstg
–40 to +125
°C
Operating Temperature
TA
–40 to +125
°C
(2)
Maximum Pressure
(P2 ≤ 1 Atmosphere)
1. Extended exposure at the specified limits may cause permanent damage or degradation to the device.
2. This sensor is designed for applications where P1 is always greater than, or equal to P2. P2 maximum is 500 kPa.
Figure 1 shows a block diagram of the internal circuitry integrated on the stand-alone sensing chip.
VS
3
Thin Film
Temperature
Compensation
and
Gain Stage #1
Sensing
Element
2
Gain Stage #2
and
Ground
Reference
Shift Circuitry
1
Vout
Pins 4, 5, and 6 are NO CONNECTS
GND
Figure 1. Fully Integrated Pressure Sensor Schematic
MPX5999D
Sensors
Freescale Semiconductor
3
Pressure
On-chip Temperature Compensation and Calibration
Figure 2 shows the sensor output signal relative to
pressure input. Typical, minimum, and maximum output
curves are shown for operation over a temperature range of
0° to 85°C using the decoupling circuit shown in Figure 4. The
output will saturate outside of the specified pressure range.
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 3 illustrates the differential or gauge configuration
in the basic chip carrier (Case 867). A fluorosilicone gel
isolates the die surface and wire bonds from harsh
environments, while allowing the pressure signal to be
transmitted to the silicon diaphragm.
The MPX5999D pressure sensor operating
characteristics, and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
performance and long-term reliability. Contact the factory for
information regarding media compatibility in your application.
Figure 4 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
5.0
Output (V)
Transfer Function:
4.5 V = V *(0.000901*P+0.04) ± Error
out
S
4.0 VS = 5.0 Vdc
Temperature = 0 to 85°C
3.5
TYP
3.0
2.5
MAX
2.0
MIN
1.5
1.0
0.5
0
0
100
200 300 400 500 600 700 800
Differential Pressure (kPa)
900 1000 1100
Figure 2. Output vs. Pressure Differential
Silicone
Die Coat
Stainless Steel
Metal Cover
Die
P1
Wire Bond
Lead Frame
RTV Die
Bond
P2
Thermoplastic Case
Figure 3. Cross-Sectional Diagrams (not to scale)
+5 V
Vout
Output
Vs
IPS
1.0 μF
0.01 μF
GND
470 pF
Figure 4. Recommended Power Supply Decoupling and Output Filtering
(For additional output filtering, please refer to Application Note AN1646)
MPX5999D
4
Sensors
Freescale Semiconductor
Pressure
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing fluorosilicone gel
which protects the die from harsh media. The Freescale MPX
pressure sensor is designed to operate with positive
differential pressure applied, P1 > P2.
The Pressure (P1) side may be identified by using the
following table.
Part Number
MPX5999D
Case Type
867
Pressure (P1)
Side Identifier
Stainless Steel Cap
MPX5999D
Sensors
Freescale Semiconductor
5
Pressure
PACKAGE DIMENSIONS
C
R
POSITIVE PRESSURE
(P1)
M
B
-AN
PIN 1
SEATING
PLANE
1
2
3
4
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION -A- IS INCLUSIVE OF THE MOLD
STOP RING. MOLD STOP RING NOT TO EXCEED
16.00 (0.630).
DIM
A
B
C
D
F
G
J
L
M
N
R
S
L
6
-TG
J
S
F
D 6 PL
0.136 (0.005)
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
VOUT
GROUND
VCC
V1
V2
VEX
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
OPEN
GROUND
-VOUT
VSUPPLY
+VOUT
OPEN
M
T A
M
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MILLIMETERS
MAX
MIN
MAX MIN
16.00
0.595
0.630 15.11
13.56
0.514
0.534 13.06
5.59
0.200
0.220
5.08
0.84
0.027
0.033
0.68
1.63
0.048
0.064
1.22
0.100 BSC
2.54 BSC
0.40
0.014
0.016
0.36
18.42
0.695
0.725 17.65
30˚ NOM
30˚ NOM
12.57
0.475
0.495 12.07
11.43
0.430
0.450 10.92
0.090
0.105
2.29
2.66
OPEN
GROUND
+VOUT
+VSUPPLY
-VOUT
OPEN
CASE 867-08
ISSUE N
BASIC ELEMENT
MPX5999D
6
Sensors
Freescale Semiconductor
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© Freescale Semiconductor, Inc. 2009. All rights reserved.
MPX5999D
Rev. 6
9/2009
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