Pb Free Plating Product CORPORATION G6401 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -12V 50m -4.3A Description The G6401 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G6401 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Ultra Low RDS(ON) Fast Switching 1.8V Gate Rated Applications Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current Pulsed Drain Current1 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Unit V V A A A W W/ Tj, Tstg Ratings -12 8 -4.3 -3.4 -12 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Unless otherwise specified) Symbol Min. BVDSS BVDSS/ Tj Breakdown Voltage Temperature Coefficient ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Typ. Max. -12 - - - -0.01 - Unit V V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS(th) - - -1.0 V VDS= VGS, ID=-250uA Forward Transconductance gfs - 12 - S VDS=-5.0V, ID=-4.0A Gate-Source Leakage Current IGSS - - 100 nA VGS= - - -1 uA VDS=-16V, VGS=0 - - -25 uA VDS=-12V, VGS=0 Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) IDSS 8V - - 50 RDS(ON) - - 85 - - 125 VGS=-1.8V, ID=-2.0A Total Gate Charge2 Qg - 15 24 ID=-4.0A Gate-Source Charge Qgs - 1.3 - Gate-Drain (“Miller”) Change Qgd - 4 - VGS=-4.5V Td(on) - 8 - Tr - 11 - Td(off) - 54 - ns Tf - 36 - VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 Input Capacitance Ciss - 985 1580 Output Capacitance Coss - 180 - pF Reverse Transfer Capacitance Crss - 160 - VGS=0V VDS=-15V f=1.0MHz VSD - - -1.2 V IS=-1.2A, VGS =0 IS=-4.0A, VGS =0 dI/dt=100A/us Static Drain-Source On-Resistance2 Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time VGS=-4.5V, ID=-4.3A m nC VGS=-2.5V, ID=-2.5A VDS=-12V Source-Drain Diode Forward On Voltage2 2 Reverse Recovery Time Trr - 39 - ns Reverse Recovery Charge Qrr - 26 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B 3/4 CORPORATION ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4