ETL G6401 P - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s f e t Datasheet

Pb Free Plating Product
CORPORATION
G6401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
BVDSS
RDS(ON)
ID
-12V
50m
-4.3A
Description
The G6401 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G6401 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Ultra Low RDS(ON)
Fast Switching
1.8V Gate Rated
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
3
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-12
8
-4.3
-3.4
-12
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
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CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Unless otherwise specified)
Symbol
Min.
BVDSS
BVDSS/ Tj
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
Typ.
Max.
-12
-
-
-
-0.01
-
Unit
V
V/
Test Conditions
VGS=0, ID=-250uA
Reference to 25
, ID=-1mA
VGS(th)
-
-
-1.0
V
VDS= VGS, ID=-250uA
Forward Transconductance
gfs
-
12
-
S
VDS=-5.0V, ID=-4.0A
Gate-Source Leakage Current
IGSS
-
-
100
nA
VGS=
-
-
-1
uA
VDS=-16V, VGS=0
-
-
-25
uA
VDS=-12V, VGS=0
Drain-Source Leakage Current(Tj=25
)
Drain-Source Leakage Current(Tj=70
)
IDSS
8V
-
-
50
RDS(ON)
-
-
85
-
-
125
VGS=-1.8V, ID=-2.0A
Total Gate Charge2
Qg
-
15
24
ID=-4.0A
Gate-Source Charge
Qgs
-
1.3
-
Gate-Drain (“Miller”) Change
Qgd
-
4
-
VGS=-4.5V
Td(on)
-
8
-
Tr
-
11
-
Td(off)
-
54
-
ns
Tf
-
36
-
VDS=-10V
ID=-1A
VGS=-10V
RG=3.3
RD=10
Input Capacitance
Ciss
-
985
1580
Output Capacitance
Coss
-
180
-
pF
Reverse Transfer Capacitance
Crss
-
160
-
VGS=0V
VDS=-15V
f=1.0MHz
VSD
-
-
-1.2
V
IS=-1.2A, VGS =0
IS=-4.0A, VGS =0
dI/dt=100A/us
Static Drain-Source On-Resistance2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=-4.5V, ID=-4.3A
m
nC
VGS=-2.5V, ID=-2.5A
VDS=-12V
Source-Drain Diode
Forward On Voltage2
2
Reverse Recovery Time
Trr
-
39
-
ns
Reverse Recovery Charge
Qrr
-
26
-
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on min. copper pad.
Characteristics Curve
2/4
CORPORATION
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
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CORPORATION
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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