Diodes MMBZ5257B 350mw surface mount zener diode Datasheet

MMBZ5221B - MMBZ5259B
350mW SURFACE MOUNT ZENER DIODE
Features
Mechanical Data
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Planar Die Construction
350mW Power Dissipation on FR-4 PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 2 and 3)
Qualified to AEC-Q101 Standards for High Reliability
Top View
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Forward Voltage
Characteristic
@ IF = 10mA
Symbol
VF
Value
0.9
Unit
V
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1. Mounted on FR4 PC Board with recommended pad layout which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBZ5221B - MMBZ5259B
Document number: DS18011 Rev. 21 - 2
1 of 5
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August 2010
© Diodes Incorporated
MMBZ5221B - MMBZ5259B
Electrical Characteristics @TA = 25°C unless otherwise specified
Zener Voltage Range (Note 4)
Type
Number
MMBZ5221B
MMBZ5222B
MMBZ5223B
MMBZ5225B
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5230B
MMBZ5231B
MMBZ5232B
MMBZ5233B
MMBZ5234B
MMBZ5235B
MMBZ5236B
MMBZ5237B
MMBZ5238B
MMBZ5239B
MMBZ5240B
MMBZ5241B
MMBZ5242B
MMBZ5243B
MMBZ5244B
MMBZ5245B
MMBZ5246B
MMBZ5248B
MMBZ5250B
MMBZ5251B
MMBZ5252B
MMBZ5254B
MMBZ5255B
MMBZ5256B
MMBZ5257B
MMBZ5258B
MMBZ5259B
Notes:
Type
Code
KC1
KC2
KC3
KC5
KG1
KG2
KG3
KG4
KG5/8E
KE1
KE2
KE3
KE4
KE5
KF1/8L
KF2
KF3
KF4
KF5
KH1
KH2/8S
KH3
KH4
KH5
KJ1
KJ3
KJ5
KK1
KK2
KK4
KK5
KM1
KM2
KM3
KM4
VZ @ IZT
Nom (V)
2.4
2.5
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
18
20
22
24
27
28
30
33
36
39
Min (V)
2.28
2.38
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.70
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.40
12.35
13.30
14.25
15.20
17.10
19.00
20.90
22.80
25.65
26.60
28.50
31.35
34.20
37.05
IZT
Max (V)
2.52
2.63
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.30
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
14.70
15.75
16.80
18.90
21.00
23.10
25.20
28.35
29.40
31.50
34.65
37.80
40.95
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.5
4.2
3.8
3.4
3.2
Maximum Zener
Impedance (Note 5)
ZZK @ IZK
ZZT @ IZT
= 0.25mA
Ω
30
1200
30
1200
30
1300
30
1600
28
1600
24
1700
23
1900
22
2000
19
1900
17
1600
11
1600
7
1600
7
1000
5
750
6
500
8
500
8
600
10
600
17
600
22
600
30
600
13
600
15
600
16
600
17
600
21
600
25
600
29
600
33
600
41
600
44
600
49
600
58
700
70
700
80
800
Maximum Reverse
Leakage Current (Note 4)
IR
@ VR
μA
100
100
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
14
15
17
18
21
21
23
25
27
30
4. Short duration pulse test used to minimize self-heating effect.
5. f = 1KHz.
MMBZ5221B - MMBZ5259B
Document number: DS18011 Rev. 21 - 2
2 of 5
www.diodes.com
August 2010
© Diodes Incorporated
MMBZ5221B - MMBZ5259B
50
40
0.3
IZ, ZENER CURRENT (mA)
PD, POWER DISSIPATION (W)
0.4
Note 1
0.2
0.1
30
20
10
0
0
30
75
25
50
100
125
TA, AMBIENT TEMPERATURE (° C)
Fig. 1 Power Derating Curve
T j = 25°C
0
150
0
1
2
3
4
5
6
8
9 10
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Typical Zener Breakdown Characteristics
1,000
10
T J = 25 °C
f = 1MHz
Nominal Zener Voltage
15
20
Test current IZ
18
22
10
27
33
0
CT, TOTAL CAPACITANCE (pF)
IZ, ZENER CURRENT (mA)
12
36
39
100
VR = 1V
VR = 2V
10
0
10
20
30
40
VZ, ZENER VOLTAGE (V)
Fig. 3 Typical Zener Breakdown Characteristics
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 4 Typical Total Capacitance vs. Nominal Zener Voltage
1
ZZ, ZENER IMPEDANCE (Ω)
1,000
100
10
1
1
10
100
VZ, ZENER VOLTAGE (V)
Fig. 5 Typical Zener Impedance Characteristics
MMBZ5221B - MMBZ5259B
Document number: DS18011 Rev. 21 - 2
3 of 5
www.diodes.com
August 2010
© Diodes Incorporated
MMBZ5221B - MMBZ5259B
Ordering Information (Note 6)
Device
(Type Number)-7-F*
Packaging
SOT-23
Shipping
3000/Tape & Reel
* Add “-7-F” to the appropriate type number in Electrical Characteristics Table from Page 2 example: 6.2V Zener = MMBZ5234B-7-F.
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
xxx
Date Code Key
Year
1998
Code
J
Month
Code
1999
K
Jan
1
2000
L
2001
M
Feb
2
2002
N
Mar
3
xxx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2003
P
Apr
4
2004 2005
R
S
May
5
2006
T
2007
U
Jun
6
2008
V
Jul
7
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
J
F
L
G
Suggested Pad Layout
Y
Z
C
X
MMBZ5221B - MMBZ5259B
Document number: DS18011 Rev. 21 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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August 2010
© Diodes Incorporated
MMBZ5221B - MMBZ5259B
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Copyright © 2010, Diodes Incorporated
www.diodes.com
MMBZ5221B - MMBZ5259B
Document number: DS18011 Rev. 21 - 2
5 of 5
www.diodes.com
August 2010
© Diodes Incorporated
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