Diodes MMDT2907V Dual pnp small signal surface mount transistor Datasheet

SPICE MODEL: MMDT2907V
MMDT2907V
Lead-free Green
NEW PRODUCT
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT2222V)
A
Ultra-Small Surface Mount Package
SOT-563
Lead Free By Design/RoHS Compliant (Note 1)
B C
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
D
Mechanical Data
·
·
·
·
·
·
·
·
G
Dim
Min
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
D
Case: SOT-563, Molded Plastic
Case Material: Molded Plastic, "Green" Molding Compound,
UL Flammability Classification Rating 94V-0
M
K
Moisture sensitivity: Level 1 per J-STD-020C
H
Terminal Connections: See Diagram
L
Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
¾
All Dimensions in mm
Marking & Type Code Information: See Last Page
C1
B2
E2
E1
B1
C2
Ordering Information: See Last Page
Weight: 0.003 grams (approx.)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-600
mA
Tj, TSTG
-55 to +150
°C
Symbol
Value
Unit
Pd
150
mW
RqJA
833
°C/W
Collector Current - Continuous
Operating and Storage and Temperature Range
Thermal Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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MMDT2907V
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-60
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
¾
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
ICBO
¾
-10
nA
mA
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125°C
Collector Cutoff Current
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -150mA, VCE =
IC = -500mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
-1.3
-2.6
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
fT
200
¾
MHz
Turn-On Time
toff
¾
45
ns
Delay Time
td
¾
10
ns
Rise Time
tr
¾
40
ns
Turn-Off Time
toff
¾
100
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
-10V
-10V
-10V
-10V
-10V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -30V, IC = -150mA,
IB1 = -15mA
4. Short duration test pulse used to minimize self-heating effect.
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MMDT2907V
30
200
CT, CAPACITANCE (pF)
Pd, POWER DISSIPATION (mW)
35
150
100
25
20
Cibo
15
10
Cobo
50
5
0
0
-50
0
50
100
150
0
2
6
8
10
12
14
16
18
20
-0.6
-1.6
IC = -300mA
IC = -10mA
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
-1.4
IC = -100mA
-1.2
4
VR, REVERSE VOLTS (V)
Fig. 2 Typical Capacitance Characteristics
TA, AMBIENT TEMPERATURE (° C)
Fig. 1, Derating Curve - Total
VCE, COLLECTOR-EMITTER VOLTAGE (V)
NEW PRODUCT
250
IC = -1mA
IC = -30mA
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.001
IC
= 10
IB
-0.5
-0.4
-0.3
TA = 150°C
TA = 25°C
-0.2
-0.1
TA = -50°C
0
-0.01
-0.1
-1
-100
-10
IB, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
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-1
-10
-100
-1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Collector Emitter Saturation Voltage vs.
Collector Current
MMDT2907V
-1.0
TA = 150°C
hFE, DC CURRENT
GAIN (NORMALIZED)
VCE = -5V
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = -5V
100
TA = 25°C
TA = -50°C
10
-0.9
TA = -50°C
-0.8
-0.7
-0.6
TA = 25°C
-0.5
-0.4
TA = 150°C
-0.3
-0.2
1
-10
-1
-100
-0.1
-1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, DC Current Gain vs
Collector Current
-10
-1
-100
IC, COLLECTOR CURRENT (mA)
Fig. 6, Base Emitter Voltage
vs. Collector Current
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
NEW PRODUCT
1000
VCE = -5V
100
10
1
-1
-10
-100
IC, COLLECTOR CURRENT (mA)
Fig. 7, Gain Bandwidth Product vs.
Collector Current
Ordering Information
Notes:
(Note 5)
Device
Packaging
Shipping
MMDT2907V-7
SOT-563
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAU = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
KAU YM
Date Code Key
Year
2004
2005
2006
2007
2008
2009
Code
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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MMDT2907V
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