Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF(typ.)* = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count 4 IF(AV) = 16A Qrr (typ.)= 260nC 2 1 CATHODE IRRM(typ.) = 5.8A trr(typ.) = 30ns 3 ANODE 2 di(rec)M/dt (typ.)* = 76A/µs Description International Rectifier's HFA16TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Units 1200 16 190 64 151 60 V -55 to +150 A °C W * 125°C 1 HFA16TB120 Bulletin PD-2.492 rev. A 11/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V BR Cathode Anode Breakdown Voltage VFM Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance LS Series Inductance Min Typ Max Units 1200 V 2.5 3.0 3.2 3.93 2.3 2.7 0.75 20 375 2000 27 40 V µA pF 8.0 nH Test Conditions IR = 100µA IF = 16A See Fig. 1 IF = 32A IF = 16A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min Typ Max Units Reverse Recovery Time See Fig. 5, 10 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 30 90 164 5.8 8.3 260 680 120 76 135 245 10 15 675 1838 ns A nC A/µs Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 16A TJ = 25°C TJ = 125°C VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead! RthJC RthJA " RthCS# Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Wt Weight Mounting Torque Min Typ Max Units 300 0.83 80 °C K/W 12 10 g (oz) Kg-cm lbf•in 0.50 2.0 0.07 6.0 5.0 ! 0.063 in. from Case (1.6mm) for 10 sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA16TB120 Bulletin PD-2.492 rev. A 11/00 Reverse Current - IR (µA) 1000 10 TJ = 150˚C 100 T = 125˚C J 10 1 TJ = 25˚C 0.1 A 0.01 0 200 400 600 800 1000 1200 Reverse Current - VR (V) T = 150˚C J Fig. 2 - Typical Reverse Current vs. Reverse Voltage T = 125˚C J T = 25˚C J 1000 1 Junction Capacitance -CT (pF) Instantaneous Forward Current - IF (A) 100 0.1 0 2 4 6 8 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 T J = 25˚C 10 A 1 1 10 100 1000 10000 Reverse Current - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 1 0.1 D D D D D D = = = = = = 0.50 0.20 0.10 0.05 0.02 0.01 PDM Single Pulse (Thermal Resistance) t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA16TB120 Bulletin PD-2.492 rev. A 11/00 30 270 If = 16 A If = 8 A 20 170 Irr ( A) trr (nC) V R = 200V T J = 125˚C T J = 25˚C 25 220 If = 16 A If = 8 A 15 120 10 70 5 VR = 200V TJ = 125˚C TJ = 25˚C 20 100 0 100 1000 di f / dt (A/µs) Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) 10000 1600 1400 1000 di f / dt (A/µs) V R = 200V T J = 125˚C T J = 25˚C V R = 200V T J = 125˚C T J = 25˚C Qrr (nC) 1000 di (rec) M/dt (A /µs) 1200 If = 16A If = 8A 800 600 1000 If = 16A If = 8A 100 400 200 0 100 di f / dt (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg) 4 10 100 di f / dt (A/µs) 1000 Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg) www.irf.com HFA16TB120 Bulletin PD-2.492 rev. A 11/00 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit www.irf.com 5 0.75 I RRM 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions 5 HFA16TB120 Bulletin PD-2.492 rev. A 11/00 Conforms to JEDEC Outline TO-220AC Dimensions in millimeters and inches WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com 6 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. www.irf.com