DATA SHEET
1GB DDR2 SDRAM SO-DIMM
EBE11UE6ACUA (128M words × 64 bits, 2 Ranks)
Specifications
Features
• Density: 1GB
• Organization
128M words × 64 bits, 2 ranks
• Mounting 8 pieces of 1G bits DDR2 SDRAM sealed
in FBGA
• Package: 200-pin socket type small outline dual in
line memory module (SO-DIMM)
PCB height: 30.0mm
Lead pitch: 0.6mm
Lead-free (RoHS compliant)
• Power supply: VDD = 1.8V ± 0.1V
• Data rate: 800Mbps/667Mbps (max.)
• Eight internal banks for concurrent operation
(components)
• Interface: SSTL_18
• Burst lengths (BL): 4, 8
• /CAS Latency (CL): 3, 4, 5, 6
• Precharge: auto precharge option for each burst
access
• Refresh: auto-refresh, self-refresh
• Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
TC = 0°C to +95°C
• Double-data-rate architecture; two data transfers per
clock cycle
• The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted CAS by programmable additive latency for
better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality
• /DQS can be disabled for single-ended Data Strobe
operation
Document No. E1216E10 (Ver. 1.0)
Date Published November 2007 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2007
EBE11UE6ACUA
Ordering Information
Part number
Data rate
Mbps (max.)
Component
JEDEC speed bin
(CL-tRCD-tRP)
EBE11UE6ACUA-8E-E
800
DDR2-800 (5-5-5)
EBE11UE6ACUA-8G-E
EBE11UE6ACUA-6E-E
Mounted devices
EDE1116ACBG-8E-E
200-pin SO-DIMM
Gold
(lead-free)
DDR2-800 (6-6-6)
667
Contact
pad
Package
EDE1116ACBG-8E-E
EDE1116ACBG-8E-E
EDE1116ACBG-6E-E
DDR2-667 (5-5-5)
Pin Configurations
Front side
1 pin
39 pin 41 pin
199 pin
2 pin
40 pin 42 pin
200 pin
Back side
Front side
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
VREF
51
DQS2
2
VSS
52
DM2
3
VSS
53
VSS
4
DQ4
54
VSS
5
DQ0
55
DQ18
6
DQ5
56
DQ22
7
DQ1
57
DQ19
8
VSS
58
DQ23
9
VSS
59
VSS
10
DM0
60
VSS
11
/DQS0
61
DQ24
12
VSS
62
DQ28
13
DQS0
63
DQ25
14
DQ6
64
DQ29
15
VSS
65
VSS
16
DQ7
66
VSS
17
DQ2
67
DM3
18
VSS
68
/DQS3
19
DQ3
69
NC
20
DQ12
70
DQS3
21
VSS
71
VSS
22
DQ13
72
VSS
23
DQ8
73
DQ26
24
VSS
74
DQ30
25
DQ9
75
DQ27
26
DM1
76
DQ31
27
VSS
77
VSS
28
VSS
78
VSS
29
/DQS1
79
CKE0
30
CK0
80
CKE1
31
DQS1
81
VDD
32
/CK0
82
VDD
33
VSS
83
NC
34
VSS
84
NC
35
DQ10
85
BA2
36
DQ14
86
NC
37
DQ11
87
VDD
38
DQ15
88
VDD
39
VSS
89
A12
40
VSS
90
A11
41
VSS
91
A9
42
VSS
92
A7
43
DQ16
93
A8
44
DQ20
94
A6
45
DQ17
95
VDD
46
DQ21
96
VDD
Data Sheet E1216E10 (Ver. 1.0)
2
EBE11UE6ACUA
Front side
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
47
VSS
97
A5
48
VSS
98
A4
49
/DQS2
99
A3
50
NC
100
A2
101
A1
151
DQ42
102
A0
152
DQ46
103
VDD
153
DQ43
104
VDD
154
DQ47
105
A10/AP
155
VSS
106
BA1
156
VSS
107
BA0
157
DQ48
108
/RAS
158
DQ52
109
/WE
159
DQ49
110
/CS0
160
DQ53
111
VDD
161
VSS
112
VDD
162
VSS
113
/CAS
163
NC
114
ODT0
164
CK1
115
/CS1
165
VSS
116
NC
166
/CK1
117
VDD
167
/DQS6
118
VDD
168
VSS
119
ODT1
169
DQS6
120
NC
170
DM6
121
VSS
171
VSS
122
VSS
172
VSS
123
DQ32
173
DQ50
124
DQ36
174
DQ54
125
DQ33
175
DQ51
126
DQ37
176
DQ55
127
VSS
177
VSS
128
VSS
178
VSS
129
/DQS4
179
DQ56
130
DM4
180
DQ60
131
DQS4
181
DQ57
132
VSS
182
DQ61
133
VSS
183
VSS
134
DQ38
184
VSS
135
DQ34
185
DM7
136
DQ39
186
/DQS7
137
DQ35
187
VSS
138
VSS
188
DQS7
139
VSS
189
DQ58
140
DQ44
190
VSS
141
DQ40
191
DQ59
142
DQ45
192
DQ62
143
DQ41
193
VSS
144
VSS
194
DQ63
145
VSS
195
SDA
146
/DQS5
196
VSS
147
DM5
197
SCL
148
DQS5
198
SA0
149
VSS
199
VDDSPD
150
VSS
200
SA1
Data Sheet E1216E10 (Ver. 1.0)
3
EBE11UE6ACUA
Pin Description
Pin name
Function
A0 to A12
Address input
Row address
Column address
A10 (AP)
Auto precharge
BA0, BA1, BA2
Bank select address
DQ0 to DQ63
Data input/output
/RAS
Row address strobe command
A0 to A12
A0 to A9
/CAS
Column address strobe command
/WE
Write enable
/CS0, /CS1
Chip select
CKE0, CKE1
Clock enable
CK0, CK1
Clock input
/CK0, /CK1
Differential clock input
DQS0 to DQS7, /DQS0 to /DQS7
Input and output data strobe
DM0 to DM7
Input mask
SCL
Clock input for serial PD
SDA
Data input/output for serial PD
SA0, SA1
Serial address input
VDD
Power for internal circuit
VDDSPD
Power for serial EEPROM
VREF
Input reference voltage
VSS
Ground
ODT0, ODT1
ODT control
NC
No connection
Data Sheet E1216E10 (Ver. 1.0)
4
EBE11UE6ACUA
Serial PD Matrix
Byte No. Function described
0
1
Number of bytes utilized by module
manufacturer
Total number of bytes in serial PD
device
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Comments
1
0
0
0
0
0
0
0
80H
128 bytes
0
0
0
0
1
0
0
0
08H
256 bytes
2
Memory type
0
0
0
0
1
0
0
0
08H
DDR2 SDRAM
3
Number of row address
0
0
0
0
1
1
0
1
0DH
13
4
Number of column address
0
0
0
0
1
0
1
0
0AH
10
5
Number of DIMM ranks
0
1
1
0
0
0
0
1
61H
2
6
Module data width
0
1
0
0
0
0
0
0
40H
64
7
Module data width continuation
0
0
0
0
0
0
0
0
00H
0
8
Voltage interface level of this assembly 0
0
0
0
0
1
0
1
05H
SSTL 1.8V
9
DDR SDRAM cycle time, CL = X
-8E (CL = 5)
0
0
1
0
0
1
0
1
25H
2.5ns*
1
-8G (CL = 6)
0
0
1
0
0
1
0
1
25H
2.5ns*
1
-6E (CL = 5)
0
0
1
1
0
0
0
0
30H
3.0ns*
1
0
1
0
0
0
0
0
0
40H
0.4ns*
1
0
1
0
0
0
1
0
1
45H
0.45ns*
0
0
0
0
0
0
0
0
00H
None.
10
SDRAM access from clock (tAC)
-8E, -8G
-6E
11
DIMM configuration type
12
Refresh rate/type
1
0
0
0
0
0
1
0
82H
7.8µs
13
Primary SDRAM width
0
0
0
1
0
0
0
0
10H
× 16
14
Error checking SDRAM width
0
0
0
0
0
0
0
0
00H
None.
15
Reserved
0
0
0
0
0
0
0
0
00H
0
0
0
0
0
1
1
0
0
0CH
4,8
0
0
0
0
1
0
0
0
08H
8
0
0
1
1
1
0
0
0
38H
3, 4, 5
16
17
18
SDRAM device attributes:
Burst length supported
SDRAM device attributes: Number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
-8E, -6E
-8G
1
0
1
1
1
0
0
0
0
70H
4, 5, 6
19
DIMM Mechanical Characteristics
0
0
0
0
0
0
0
1
01H
3.80mm max.
20
DIMM type information
0
0
0
0
0
1
0
0
04H
SO-DIMM
21
SDRAM module attributes
0
0
0
0
0
0
0
0
00H
Normal
22
SDRAM device attributes: General
0
0
0
0
0
0
1
1
03H
Weak Driver
50Ω ODT Support
23
Minimum clock cycle time at
CL = X − 1
-8E, -6E (CL = 4)
0
0
1
1
1
1
0
1
3DH
3.75ns*
0
0
1
1
0
0
0
0
30H
3.0ns*
1
0
1
0
1
0
0
0
0
50H
0.5ns*
1
0
1
0
0
0
1
0
1
45H
0.45ns*
0
1
0
1
0
0
0
0
50H
5.0ns*
0
0
1
1
1
1
0
1
3DH
3.75ns*
-8G (CL = 5)
24
Maximum data access time (tAC) from
clock at CL = X − 1
-8E, -6E (CL = 4)
-8G (CL = 5)
25
Minimum clock cycle time at
CL = X − 2
-8E, -6E (CL = 3)
-8G (CL = 4)
Data Sheet E1216E10 (Ver. 1.0)
5
1
1
1
1
EBE11UE6ACUA
Byte No.
Function described
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex value Comments
26
Maximum data access time (tAC)
from clock at CL = X − 2
-8E, -6E (CL = 3)
0
1
1
0
0
0
0
0
60H
0.6ns*
1
0
1
0
1
0
0
0
0
50H
0.5ns*
1
0
0
1
1
0
0
1
0
32H
12.5ns
0
0
1
1
1
1
0
0
3CH
15ns
0
1
0
1
0
0
0
28H
10ns
0
1
1
0
0
1
0
32H
12.5ns
-8G (CL = 4)
27
Minimum row precharge time (tRP)
-8E
-8G, -6E
28
29
Minimum row active to row active
0
delay (tRRD)
Minimum /RAS to /CAS delay (tRCD)
0
-8E
0
0
1
1
1
1
0
0
3CH
15ns
Minimum active to precharge time
(tRAS)
-8G, -6E
0
0
1
0
1
1
0
1
2DH
45ns
31
Module rank density
1
0
0
0
0
0
0
0
80H
512M bytes
32
Address and command setup time
before clock (tIS)
-8E, -8G
0
0
0
1
0
1
1
1
17H
0.17ns*
1
0
0
1
0
0
0
0
0
20H
0.20ns*
1
0
0
1
0
0
1
0
1
25H
0.25ns*
1
0
0
1
0
0
1
1
1
27H
0.27ns*
1
0
0
0
0
0
1
0
1
05H
0.05ns*
1
0
0
0
1
0
0
0
0
10H
0.10ns*
1
Data input hold time after clock (tDH)
0
-8E, -8G
0
0
1
0
0
1
0
12H
0.12ns*
1
0
0
0
1
0
1
1
1
17H
0.17ns*
1
0
0
1
1
1
1
0
0
3CH
15ns*
0
0
0
1
1
1
1
0
1EH
7.5ns*
1
0
0
0
1
1
1
1
0
1EH
7.5ns*
1
0
0
0
0
0
0
0
0
00H
TBD
0
0
1
1
0
1
1
0
36H
0
0
0
0
0
1
1
0
06H
0
0
1
1
1
0
0
1
39H
57.5ns*
0
0
1
1
1
1
0
0
3CH
60ns*
30
-6E
33
Address and command hold time
after clock (tIH)
-8E, -8G
-6E
34
Data input setup time before clock
(tDS)
-8E, -8G
-6E
35
-6E
36
37
38
39
40
Write recovery time (tWR)
Internal write to read command delay
(tWTR)
Internal read to precharge command
delay (tRTP)
Memory analysis probe
characteristics
Extension of Byte 41 and 42
-8E
-8G, -6E
41
Active command period (tRC)
-8E
-8G, -6E
1
1
1
42
Auto refresh to active/
Auto refresh command cycle (tRFC)
0
1
1
1
1
1
1
1
7FH
127.5ns*
43
SDRAM tCK cycle max. (tCK max.)
1
0
0
0
0
0
0
0
80H
8ns*
44
Dout to DQS skew
-8E, -8G
0
0
0
1
0
1
0
0
14H
0.20ns*
1
0
0
0
1
1
0
0
0
18H
0.24ns*
1
0
0
0
1
1
1
1
0
1EH
0.30ns*
1
0
0
1
0
0
0
1
0
22H
0.34ns*
1
0
0
0
0
0
0
0
0
00H
Undefined
-6E
45
Data hold skew (tQHS)
-8E, -8G
-6E
46
PLL relock time
Data Sheet E1216E10 (Ver. 1.0)
6
1
1
EBE11UE6ACUA
Byte No.
Function described
47 to 61
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex value
0
0
0
0
0
0
0
0
00H
Comments
62
SPD Revision
0
0
0
1
0
0
1
0
12H
63
Checksum for bytes 0 to 62
-8E
Rev. 1.2
1
0
0
0
1
0
1
1
8BH
-8G
0
1
1
0
1
1
1
1
6FH
-6E
1
0
1
0
0
1
0
1
A5H
0
1
1
1
1
1
1
1
7FH
Continuation
code
Elpida Memory
64 to 65
Manufacturer’s JEDEC ID code
66
Manufacturer’s JEDEC ID code
1
1
1
1
1
1
1
0
FEH
67 to 71
Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00H
72
Manufacturing location
×
×
×
×
×
×
×
×
××
(ASCII-8bit
code)
73
Module part number
0
1
0
0
0
1
0
1
45H
E
74
Module part number
0
1
0
0
0
0
1
0
42H
B
75
Module part number
0
1
0
0
0
1
0
1
45H
E
76
Module part number
0
0
1
1
0
1
0
1
31H
1
77
Module part number
0
0
1
1
0
0
0
1
31H
1
78
Module part number
0
1
0
1
0
1
0
1
55H
U
79
Module part number
0
1
0
0
0
1
0
1
45H
E
80
Module part number
0
0
1
1
0
1
1
0
36H
6
81
Module part number
0
1
0
0
0
0
0
1
41H
A
82
Module part number
0
1
0
0
0
0
1
1
43H
C
83
Module part number
0
1
0
1
0
1
0
1
55H
U
84
Module part number
0
1
0
0
0
0
0
1
41H
A
85
Module part number
0
0
1
0
1
1
0
1
2DH
—
86
Module part number
-8E, -8G
0
0
1
1
1
0
0
0
38H
8
0
0
1
1
0
1
1
0
36H
6
0
1
0
0
0
1
0
1
45H
E
-6E
87
Module part number
-8E, -6E
0
1
0
0
0
1
1
1
47H
G
88
Module part number
0
0
1
0
1
1
0
1
2DH
—
89
Module part number
0
1
0
0
0
1
0
1
45H
E
90
Module part number
0
0
1
0
0
0
0
0
20H
(Space)
91
Revision code
0
0
1
1
0
0
0
0
30H
Initial
92
Revision code
0
0
1
0
0
0
0
0
20H
(Space)
93
Manufacturing date
×
×
×
×
×
×
×
×
××
94
Manufacturing date
×
×
×
×
×
×
×
×
××
95 to 98
Module serial number
99 to 127
Manufacture specific data
-8G
Note: 1. These specifications are defined based on component specification, not module.
Data Sheet E1216E10 (Ver. 1.0)
7
Year code
(BCD)
Week code
(BCD)
EBE11UE6ACUA
Block Diagram
ODT1
ODT0
CKE1
CKE0
/CS1
/CS0
RS2
RS2
RS2
RS2
RS2
RS2
RS1
/DQS0
/CS CKE ODT
/LDQS
/CS CKE ODT
/LDQS
RS1
/DQS4
RS1
RS1
DQS0
DM0
DQ0 to DQ7
RS1
8 RS1
RS1
/DQS1
RS1
DQS1
DM1
RS1
LDQS
LDQS
LDM
LDM
DQS4
RS1
/DQS2
I/O0 to I/O7
/UDQS
I/O0 to I/O7
D0
/UDQS
DQ32 to DQ39
/DQS5
UDQS
UDQS
UDM
UDM
I/O8 to I/O15
I/O8 to I/O15
/CS CKE ODT
/LDQS
/CS CKE ODT
/LDQS
/DQS6
LDQS
LDQS
DQS6
DQS3
RS1
DM3
LDM
LDM
I/O0 to I/O7
I/O0 to I/O7
DQS5
BA0 to BA2
A0 to A12
/RAS
/CAS
/WE
/UDQS
D6
UDQS
UDQS
UDM
UDM
RS1
DM5
DQ40 to DQ47
I/O8 to I/O15
I/O8 to I/O15
/CS CKE ODT
/LDQS
RS1
/CS CKE ODT
/LDQS
D1
/UDQS
UDQS
UDQS
UDM
UDM
I/O8 to I/O15
I/O8 to I/O15
LDQS
LDQS
LDM
LDM
RS1
DM6
DQ48 to DQ55
D5
/DQS7
DQS7
8 RS1
I/O0 to I/O7
RS1
/UDQS
I/O0 to I/O7
D3
/UDQS
D7
RS1
RS1
DM7
8 RS1
DQ24 to DQ31
I/O0 to I/O7
D2
RS1
/UDQS
RS1
/UDQS
8 RS1
RS1
/DQS3
LDM
RS1
8 RS1
DQ16 to DQ23
LDQS
LDM
I/O0 to I/O7
RS1
D4
RS1
DM2
LDQS
8 RS1
RS1
DQS2
/CS CKE ODT
/LDQS
RS1
DM4
8 RS1
DQ8 to DQ15
/CS CKE ODT
/LDQS
UDQS
UDQS
UDM
UDM
8 RS1
DQ56 to DQ63
I/O8 to I/O15
I/O8 to I/O15
RS2
BA0 to BA2: SDRAMs (D0 to D7)
Serial PD
RS2
A0 to A12: SDRAMs (D0 to D7)
RS2
SCL
SCL
SA0
A0
SA1
A1
SDA
SDA
/RAS: SDRAMs (D0 to D7)
RS2
/CAS: SDRAMs (D0 to D7)
RS2
/WE: SDRAMs (D0 to D7)
A2
CK0
/CK0
4 loads
CK1
/CK1
4 loads
U0
WP
Notes :
1. DQ wiring may be changed within a byte.
VDDSPD
VREF
SPD
2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships
SDRAMs (D0 to D7)
must be meintained as shown.
VDD
SDRAMs (D0 to D7) VDD and VDDQ
VSS
SDRAMs (D0 to D7) SPD
* D0 to D7 : 1G bits DDR2 SDRAM
U0 : 2k bits EEPROM
Rs1 : 22Ω
Rs2 : 3.0Ω
Data Sheet E1216E10 (Ver. 1.0)
8
EBE11UE6ACUA
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
1
Voltage on any pin relative to VSS
VT
–0.5 to +2.3
V
Supply voltage relative to VSS
VDD
–0.5 to +2.3
V
Short circuit output current
IOS
50
mA
1
Power dissipation
PD
4
W
Operating case temperature
TC
0 to +95
°C
1, 2
Storage temperature
Tstg
–55 to +100
°C
1
Notes: 1. DDR2 SDRAM component specification.
2. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature self-refresh entry via the control of
EMRS (2) bit A7 is required.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TC = 0°C to +85°C) (DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
1.7
1.8
1.9
V
4
VSS
0
0
0
V
3.6
VDDSPD
1.7
—
Input reference voltage
VREF
0.49 × VDDQ
0.50 × VDDQ 0.51 × VDDQ
V
V
1, 2
Termination voltage
VTT
VREF − 0.04
VREF
VREF + 0.04
V
3
DC input logic high
VIH (DC)
VREF + 0.125
VDDQ + 0.3
V
DC input low
VIL (DC)
−0.3
VREF – 0.125
V
AC input logic high
VIH (AC)
VREF + 0.200
V
AC input low
VIL (AC)
VREF – 0.200
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ must be equal to VDD.
Data Sheet E1216E10 (Ver. 1.0)
9
EBE11UE6ACUA
AC Overshoot/Undershoot Specification (DDR2 SDRAM Component Specification)
Parameter
Pins
Specification
Unit
Maximum peak amplitude allowed for overshoot
Command, Address,
CKE, ODT
0.5
V
Maximum peak amplitude allowed for undershoot
0.5
V
Maximum overshoot area above VDD
DDR2-800
0.66
V-ns
0.8
V-ns
0.66
V-ns
0.8
V-ns
DDR2-667
Maximum undershoot area below VSS
DDR2-800
DDR2-667
Maximum peak amplitude allowed for overshoot
0.5
V
Maximum peak amplitude allowed for undershoot
CK, /CK
0.5
V
Maximum overshoot area above VDD
0.23
V-ns
Maximum undershoot area below VSS
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
Maximum overshoot area above VDDQ
DQ, DQS, /DQS,
UDQS, /UDQS,
LDQS, /LDQS,
RDQS, /RDQS,
DM, UDM, LDM
Maximum undershoot area below VSSQ
0.23
V-ns
0.5
V
0.5
V
0.23
V-ns
0.23
V-ns
Maximum amplitude
Overshoot area
Volts (V)
VDD, VDDQ
VSS, VSSQ
Undershoot area
Time (ns)
Overshoot/Undershoot Definition
Data Sheet E1216E10 (Ver. 1.0)
10
EBE11UE6ACUA
DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V)
Parameter
Symbol
Grade
max.
Unit
-8E, -8G
-6E
480
440
mA
-8E, -8G
-6E
800
720
mA
Operating current
IDD1
(ACT-READ-PRE)
(Another rank is in IDD2P)
-8E, -8G
-6E
560
520
mA
Operating current
IDD1
(ACT-READ-PRE)
(Another rank is in IDD3N)
-8E, -8G
-6E
880
800
mA
Operating current
IDD0
(ACT-PRE)
(Another rank is in IDD2P)
Operating current
IDD0
(ACT-PRE)
(Another rank is in IDD3N)
Precharge power-down
standby current
Precharge quiet standby
current
Idle standby current
IDD2P
IDD2Q
80
-8E, -8G
-6E
mA
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
mA
IDD3P-F
280
mA
IDD3P-S
160
mA
IDD3N
-8E, -8G
-6E
720
640
mA
Operating current
IDD4R
(Burst read operating)
(Another rank is in IDD2P)
-8E, -8G
-6E
840
740
mA
Operating current
IDD4R
(Burst read operating)
(Another rank is in IDD3N)
-8E, -8G
-6E
1160
1020
mA
-8E, -8G
-6E
840
740
mA
-8E, -8G
-6E
1160
1020
mA
Operating current
IDD4W
(Burst write operating)
(Another rank is in IDD2P)
Operating current
IDD4W
(Burst write operating)
(Another rank is in IDD3N)
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
mA
Active power-down
standby current
Active standby current
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
320
280
IDD2N
-8E, -8G
-6E
280
240
Test condition
Data Sheet E1216E10 (Ver. 1.0)
11
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
Fast PDN Exit
tCK = tCK (IDD);
MRS(12) = 0
CKE is L;
Other control and address
bus inputs are STABLE; Slow PDN Exit
Data bus inputs are
MRS(12) = 1
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
EBE11UE6ACUA
Parameter
Grade
max.
Unit
Auto-refresh current
IDD5
(Another rank is in IDD2P)
-8E, -8G
-6E
1200
1160
mA
Auto-refresh current
IDD5
(Another rank is in IDD3N)
-8E, -8G
-6E
1520
1440
mA
Self-refresh current
Symbol
IDD6
80
mA
Operating current
IDD7
(Bank interleaving)
(Another rank is in IDD2P)
-8E, -8G
-6E
1440
1280
mA
Operating current
IDD7
(Bank interleaving)
(Another rank is in IDD3N)
-8E, -8G
-6E
1760
1560
mA
Test condition
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self Refresh Mode;
CK and /CK at 0V;
CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tFAW = tFAW (IDD), tRCD = 1 × tCK (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Notes: 1.
2.
3.
4.
IDD specifications are tested after the device is properly initialized.
Input slew rate is specified by AC Input Test Condition.
IDD parameters are specified with ODT disabled.
Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS. IDD values must be met with all
combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN ≤VIL (AC) (max.)
H is defined as VIN ≥VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-800
DDR2-800
DDR2-667
Parameter
5-5-5
6-6-6
5-5-5
Unit
CL (IDD)
5
6
5
tCK
tRCD (IDD)
12.5
15
15
ns
tRC (IDD)
57.5
60
60
ns
tRRD (IDD)
10
10
10
ns
tFAW (IDD)
45
45
50
ns
tCK (IDD)
2.5
2.5
3
ns
tRAS (min.)(IDD)
45
45
45
ns
tRAS (max.)(IDD)
70000
70000
70000
ns
tRP (IDD)
12.5
15
15
ns
tRFC (IDD)
127.5
127.5
127.5
ns
Data Sheet E1216E10 (Ver. 1.0)
12
EBE11UE6ACUA
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Value
Input leakage current
ILI
2
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
5
µA
VDDQ ≥ VOUT ≥ VSS
VTT + 0.603
V
5
VTT − 0.603
V
5
Output timing measurement reference level VOTR
0.5 × VDDQ
V
1
Output minimum sink DC current
IOL
+13.4
mA
3, 4, 5
Output minimum source DC current
IOH
−13.4
mA
2, 4, 5
Minimum required output pull-up under AC
VOH
test load
Maximum required output pull-down under
VOL
AC test load
Notes: 1.
2.
3.
4.
5.
Unit
Notes
The VDDQ of the device under test is referenced.
VDDQ = 1.7V; VOUT = 1.42V.
VDDQ = 1.7V; VOUT = 0.28V.
The DC value of VREF applied to the receiving device is expected to be set to VTT.
After OCD calibration to 18Ω at TC = 25°C, VDD = VDDQ = 1.8V.
DC Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
Notes
AC differential input voltage
VID (AC)
0.5
VDDQ + 0.6
V
1, 2
AC differential cross point voltage
VIX (AC)
0.5 × VDDQ − 0.175
0.5 × VDDQ + 0.175
V
2
AC differential cross point voltage
VOX (AC)
0.5 × VDDQ − 0.125
0.5 × VDDQ + 0.125
V
3
Notes: 1. VID (AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true
input signal (such as CK, DQS, RDQS) and VCP is the complementary input signal (such as /CK, /DQS,
/RDQS). The minimum value is equal to VIH (AC) − VIL (AC).
2. The typical value of VIX (AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX (AC)
is expected to track variations in VDDQ. VIX (AC) indicates the voltage at which differential input signals
must cross.
3. The typical value of VOX (AC) is expected to be about 0.5 × VDDQ of the transmitting device and
VOX (AC) is expected to track variations in VDDQ. VOX (AC) indicates the voltage at which differential
output signals must cross.
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
Differential Signal Levels*1, 2
Data Sheet E1216E10 (Ver. 1.0)
13
EBE11UE6ACUA
ODT DC Electrical Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω
Rtt1 (eff)
60
Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω
Rtt2 (eff)
120
Rtt effective impedance value for EMRS (A6, A2) = 1, 1; 50 Ω
Rtt3 (eff)
40
Deviation of VM with respect to VDDQ/2
∆VM
−6
typ.
max.
Unit
Note
75
90
Ω
1
150
180
Ω
1
50
60
Ω
1
+6
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt (eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL_18.
Rtt (eff ) =
VIH ( AC ) − VIL( AC )
I (VIH ( AC )) − I (VIL( AC ))
Measurement Definition for ∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
2 × VM
- 1 × 100
∆VM =
VDDQ
OCD Default Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
min.
typ.
max.
Unit
Notes
Output impedance
12.6
18
23.4
Ω
1, 5
Pull-up and pull-down mismatch
0
4
Ω
1, 2
Output slew rate
1.5
5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
5. DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if OCD is changed
from default settings.
Data Sheet E1216E10 (Ver. 1.0)
14
EBE11UE6ACUA
Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V)
(DDR2 SDRAM Component Specification)
Parameter
Symbol
Pins
min.
max.
Unit
Notes
Input capacitance
-8E, -8G
CI1
Address, /RAS,
/CAS, /WE,
1.0
1.75
pF
1
1.0
2.0
pF
1
1.0
1.75
pF
1
1.0
2.0
pF
1
-6E
Input capacitance
-8E, -8G
CI2
/CS, CKE, ODT
-6E
Input capacitance
CI3
CK, /CK
1.0
2.0
pF
1
Input capacitance
CI4
DM
2.5
3.5
pF
2
Data and DQS input/output capacitance
CO
DQ, DQS, /DQS
2.5
3.5
pF
2
Notes: 1
2
Matching within 0.25pF.
Matching within 0.50pF.
Data Sheet E1216E10 (Ver. 1.0)
15
EBE11UE6ACUA
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
(DDR2 SDRAM Component Specification)
• New units tCK(avg) and nCK, are introduced in DDR2-800 and DDR2-667
tCK(avg): actual tCK(avg) of the input clock under operation.
nCK: one clock cycle of the input clock, counting the actual clock edges.
Speed bin
-8E
-8G
-6E
DDR2-800 (5-5-5)
DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
Parameter
Symbol
min.
max.
min.
max.
min.
max.
Unit Notes
Active to read or write command
delay
tRCD
12.5
15
15
ns
Precharge command period
tRP
12.5
15
15
ns
tRC
57.5
60
60
ns
tAC
−400
+400
−400
+400
−450
+450
ps
10
tDQSCK
−350
+350
−350
+350
−400
+400
ps
10
CK high-level width
tCH (avg) 0.48
0.52
0.48
0.52
0.48
0.52
CK low-level width
tCL(avg)
0.48
0.52
0.48
0.52
0.48
0.52
CK half period
tHP
Min.
(tCL(abs),
tCH(abs))
Clock cycle time
(CL = 6)
tCK (avg) 2500
(CL = 5)
Active to active/auto-refresh
command time
DQ output access time from CK,
/CK
DQS output access time from CK,
/CK
tCK
13
(avg)
tCK
13
(avg)
Min.
(tCL(abs),
tCH(abs))
Min.
(tCL(abs),
tCH(abs))
ps
6, 13
8000
2500
8000
3000
8000
ps
13
tCK (avg) 2500
8000
3000
8000
3000
8000
ps
13
(CL = 4)
tCK (avg) 3750
8000
3750
8000
3750
8000
ps
13
(CL = 3)
tCK (avg) 5000
8000
5000
8000
5000
8000
ps
13
125
125
175
ps
5
50
50
100
ps
4
tIPW
0.6
0.6
0.6
tDIPW
0.35
0.35
0.35
tHZ
tAC max.
tAC max.
tAC max. ps
10
tLZ
(DQS)
tAC min.
tAC max. tAC min.
tAC max. tAC min.
tAC max. ps
10
tLZ (DQ)
2
2
2
tAC max. ps
tAC max.
tAC max.
× tAC min.
× tAC min.
× tAC min.
10
tDQSQ
200
tQHS
tQH
tHP –
tQHS
tDQSS
DQS input high pulse width
DQS input low pulse width
DQ and DM input hold time
DQ and DM input setup time
Control and Address input pulse
width for each input
DQ and DM input pulse width for
each input
Data-out high-impedance time from
CK,/CK
DQS, /DQS low-impedance time
from CK,/CK
DQ low-impedance time from
CK,/CK
DQS-DQ skew for DQS and
associated DQ signals
DQ hold skew factor
DQ/DQS output hold time from
DQS
DQS latching rising transitions to
associated clock edges
tDH
(base)
tDS
(base)
200
300
tHP –
tQHS
−0.25
+0.25
tDQSH
0.35
tDQSL
DQS falling edge to CK setup time tDSS
tCK
(avg)
tCK
(avg)
240
ps
300
340
ps
7
tHP –
tQHS
ps
8
−0.25
+0.25
−0.25
+0.25
0.35
0.35
0.35
0.35
0.35
0.2
0.2
0.2
Data Sheet E1216E10 (Ver. 1.0)
16
tCK
(avg)
tCK
(avg)
tCK
(avg)
tCK
(avg)
EBE11UE6ACUA
-8E
-8G
-6E
DDR2-800 (5-5-5)
DDR2-800 (6-6-6)
DDR2-667 (5-5-5)
Symbol
min.
max.
min.
max.
min.
max.
Unit Notes
tDSH
0.2
0.2
0.2
tCK
(avg)
tMRD
2
2
2
nCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
Write preamble
tWPRE
0.35
0.35
0.35
Address and control input hold time tIH (base) 250
250
275
ps
5
Address and control input setup
time
tIS (base) 175
175
200
ps
4
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
Active to precharge command
tRAS
45
70000
45
70000
45
70000
Active to auto-precharge delay
tRAP
tRCD min.
Active bank A to active bank B
command period
tRRD
10
10
10
Four active window period
tFAW
45
45
/CAS to /CAS command delay
tCCD
2
2
Write recovery time
tWR
15
15
tDAL
WR +
RU (tRP/
tCK (avg))
tWTR
7.5
7.5
7.5
ns
tRTP
7.5
7.5
7.5
ns
tXSNR
tRFC + 10
tRFC + 10
ns
tXSRD
200
200
200
nCK
tXP
2
2
2
nCK
tXARD
2
2
2
nCK 3
tXARDS
8 − AL
8 − AL
7 − AL
nCK 2, 3
tCKE
3
3
3
nCK
0
12
0
12
0
12
ns
0
12
0
12
0
12
ns
127.5
127.5
127.5
ns
7.8
7.8
7.8
µs
tREFI
3.9
3.9
3.9
µs
tDELAY
tIS +
tCK(avg)
+ tIH
tIS +
tCK(avg)
+ tIH
tIS +
tCK(avg)
+ tIH
ns
Speed bin
Parameter
DQS falling edge hold time from
CK
Mode register set command cycle
time
Auto precharge write recovery +
precharge time
Internal write to read command
delay
Internal read to precharge
command delay
Exit self-refresh to a non-read
command
Exit self-refresh to a read
command
Exit precharge power down to any
non-read command
Exit active power down to read
command
Exit active power down to read
command
(slow exit/low power mode)
CKE minimum pulse width (high
and low pulse width)
Output impedance test driver delay tOIT
MRS command to ODT update
tMOD
delay
Auto-refresh to active/auto-refresh
tRFC
command time
Average periodic refresh interval
tREFI
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
Minimum time clocks remains ON
after CKE asynchronously drops
low
tRCD min.
WR +
RU (tRP/
tCK (avg))
tRFC + 10
Data Sheet E1216E10 (Ver. 1.0)
17
tCK
(avg)
tCK
(avg)
tCK
11
(avg)
tCK
12
(avg)
ns
tRCD min.
ns
ns
50
ns
2
nCK
15
ns
WR +
RU (tRP/
tCK (avg))
nCK 1, 9
EBE11UE6ACUA
Notes: 1.
2.
3.
4.
For each of the terms above, if not already an integer, round to the next higher integer.
AL: Additive Latency.
MRS A12 bit defines which active power down exit timing to be applied.
The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.
DQS
CK
/DQS
/CK
tDS
tDH
tDS
tIS
tDH
tIH
tIS
tIH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
6. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not
an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing
tQH.
The value to be used for tQH calculation is determined by the following equation;
tHP = min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock high time;
tCL(abs) is the minimum of the actual instantaneous clock low time;
7. tQHS accounts for:
a. The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the
input is transferred to the output; and
b. The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
next transition, both of which are independent of each other, due to data pin skew, output pattern effects,
and p-channel to n-channel variation of the output drivers.
8. tQH = tHP – tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification
value under the max column.
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye
will be.}
Examples:
a. If the system provides tHP of 1315ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975ps
(min.)
b. If the system provides tHP of 1420ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080ps
(min.)
9. RU stands for round up. WR refers to the tWR parameter stored in the MRS.
10. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per) min. = −272ps and
tERR(6-10per) max. = +293ps, then tDQSCK min.(derated) = tDQSCK min. − tERR(6-10per) max. =
−400ps − 293ps = −693ps and tDQSCK max.(derated) = tDQSCK max. − tERR(6-10per) min. = 400ps +
272ps = +672ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ) min.(derated) = −900ps − 293ps =
−1193ps and tLZ(DQ) max.(derated)= 450ps + 272ps = +722ps.
11. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per) min. = −72ps and
tJIT(per) max. = +93ps, then tRPRE min.(derated) = tRPRE min. + tJIT(per) min. = 0.9 × tCK(avg) − 72ps
= +2178ps and tRPRE max.(derated) = tRPRE max. + tJIT(per) max. = 1.1 × tCK(avg) + 93ps = +2843ps.
Data Sheet E1216E10 (Ver. 1.0)
18
EBE11UE6ACUA
12. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty) min. = −72ps and
tJIT(duty) max. = +93ps, then tRPST min.(derated) = tRPST min. + tJIT(duty) min. = 0.4 × tCK(avg) −
72ps = +928ps and tRPST max.(derated) = tRPST max. + tJIT(duty) max. = 0.6 × tCK(avg) + 93ps =
+1592ps.
13. Refer to the Clock Jitter table.
ODT AC Electrical Characteristics (DDR2 SDRAM Component Specification)
Parameter
Symbol
min.
max.
Unit
ODT turn-on delay
tAOND
2
2
tCK
ODT turn-on
tAON
tAC (min)
tAC (max) + 700
ps
ODT turn-on (power down mode)
tAONPD
tAC(min) + 2000
2tCK + tAC(max) + 1000
ps
ODT turn-off delay
tAOFD
2.5
2.5
tCK
5
ODT turn-off
tAOF
tAC(min)
tAC(max) + 600
ps
2, 4, 5
ODT turn-off (power down mode)
tAOFPD
tAC(min) + 2000
2.5tCK + tAC(max) + 1000
ps
ODT to power down entry latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
Notes
1, 3
Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
2. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
3. When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.)
4. When the device is operated with input clock jitter, this parameter needs to be derated by
{−tJIT(duty) max. − tERR(6-10per) max. } and { −tJIT(duty) min. − tERR(6-10per) min. } of the actual input
clock.(output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per) min. = −272ps,
tERR(6-10per) max. = +293ps, tJIT(duty) min. = −106ps and tJIT(duty) max. = +94ps, then
tAOF min.(derated) = tAOF min. + { −tJIT(duty) max. − tERR(6-10per) max. } = −450ps + { −94ps − 293ps}
= −837ps and tAOF max.(derated) = tAOF max. + { −tJIT(duty) min. − tERR(6-10per) min. } = 1050ps +
{ 106ps + 272ps} = +1428ps.
5. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 × nCK assumes a tCH(avg), average input
clock high pulse width of 0.5 relative to tCK(avg). tAOF min. and tAOF max. should each be derated by
the same amount as the actual amount of tCH(avg) offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOF min. should be derated by
subtracting 0.02 × tCK(avg) from it, whereas if an input clock has a worst case tCH(avg) of 0.52,
the tAOF max. should be derated by adding 0.02 × tCK(avg) to it. Therefore, we have;
tAOF min.(derated) = tAC min. − [0.5 − Min.(0.5, tCH(avg) min.)] × tCK(avg)
tAOF max.(derated) = tAC max. + 0.6 + [Max.(0.5, tCH(avg) max.) − 0.5] × tCK(avg)
or
tAOF min.(derated) = Min.(tAC min., tAC min. − [0.5 − tCH(avg) min.] × tCK(avg))
tAOF max.(derated) = 0.6 + Max.(tAC max., tAC max. + [tCH(avg) max. − 0.5] × tCK(avg))
where tCH(avg) min. and tCH(avg) max. are the minimum and maximum of tCH(avg) actually measured
at the DRAM input balls.
Data Sheet E1216E10 (Ver. 1.0)
19
EBE11UE6ACUA
AC Input Test Conditions (DDR2 SDRAM Component Specification)
Parameter
Symbol
Value
Unit
Notes
Input reference voltage
VREF
0.5 × VDDQ
V
1
Input signal maximum peak to peak swing
VSWING (max.)
1.0
V
1
Input signal minimum slew rate
SLEW
1.0
V/ns
2, 3
Notes: 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL (AC) level applied to
the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH (AC) min. for
rising edges and the range from VREF to VIL (AC) max. for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL (AC) to VIH (AC) on the positive
transitions and VIH (AC) to VIL (AC) on the negative transitions.
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VSWING(max.)
VREF
VIL (DC)(max.)
VIL (AC)(max.)
Falling slew =
VREF
VSS
∆TR
∆TF
− VIL (AC)(max.)
Rising slew =
∆TF
AC Input Test Signal Wave forms
Measurement point
DQ
VTT
RT =25 Ω
Output Load
Data Sheet E1216E10 (Ver. 1.0)
20
VIH (AC) min. − VREF
∆TR
EBE11UE6ACUA
Clock Jitter [DDR2-800, 667]
Frequency (Mbps)
-8E, -8G
-6E
800
667
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Average clock period
tCK (avg)
2500
8000
3000
8000
ps
1
Clock period jitter
tJIT (per)
−100
100
−125
125
ps
5
Clock period jitter during
DLL locking period
tJIT
(per, lck)
−80
80
−100
100
ps
5
Cycle to cycle period jitter
tJIT (cc)
200
250
ps
6
Cycle to cycle clock period jitter
during DLL locking period
tJIT (cc, lck)
160
200
ps
6
Cumulative error across 2 cycles
tERR (2per) −150
150
−175
175
ps
7
Cumulative error across 3 cycles
tERR (3per) −175
175
−225
225
ps
7
Cumulative error across 4 cycles
tERR (4per) −200
200
−250
250
ps
7
Cumulative error across 5 cycles
tERR (5per) −200
200
−250
250
ps
7
Cumulative error across
n=6,7,8,9,10 cycles
Cumulative error across
n=11, 12,…49,50 cycles
tERR
(6-10per)
tERR
(11-50per)
−300
300
−350
350
ps
7
−450
450
−450
450
ps
7
Average high pulse width
tCH (avg)
0.48
0.52
0.48
0.52
tCK (avg)
2
Average low pulse width
tCL (avg)
0.48
0.52
0.48
0.52
tCK (avg)
3
Duty cycle jitter
tJIT (duty)
−100
100
−125
125
ps
4
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window.
N
tCK (avg ) = ∑ tCKj N
j =1
N = 200
2. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high
pulses.
N
tCH (avg ) = ∑ tCHj (N × tCK (avg ))
j =1
N = 200
3. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
N
tCL(avg ) = ∑ tCLj (N × tCK (avg ))
j =1
N = 200
4. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of
any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200}
tJIT (CL) = {tCLj − tCL (avg) where j = 1 to 200}
5. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCKj − tCK (avg) where j = 1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same
definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not
subject to production test.
Data Sheet E1216E10 (Ver. 1.0)
21
EBE11UE6ACUA
6. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles:
tJIT (cc) = Max. of |tCKj+1 − tCKj|
tJIT (cc) is defines the cycle to cycle jitter when the DLL is already locked. tJIT (cc, lck) uses the same
definition for cycle to cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not
subject to production test.
7. tERR (nper) is defined as the cumulative error across multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production test.
n
tERR(nper ) = ∑ tCKj − n × tCK(avg ))
j =1
2 ≤ n ≤ 50 for tERR (nper)
8. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing hold at all times.
(minimum and maximum of spec values are to be used for calculations in the table below.)
Parameter
Symbol
min.
max.
Absolute clock period
tCK (abs)
tCK (avg) min. + tJIT (per) min.
tCK (avg) max. + tJIT (per) max. ps
tCH (avg) min. × tCK (avg) min.
+ tJIT (duty) min.
tCL (avg) min. × tCK (avg) min.
+ tJIT (duty) min.
tCH (avg) max. × tCK (avg) max.
ps
+ tJIT (duty) max.
tCL (avg) max. × tCK (avg) max.
ps
+ tJIT (duty) max.
Absolute clock high pulse
width
Absolute clock low pulse
width
tCH (abs)
tCL (abs)
Example: For DDR2-667, tCH(abs) min. = ( 0.48 × 3000 ps ) - 125ps = 1315ps
Data Sheet E1216E10 (Ver. 1.0)
22
Unit
EBE11UE6ACUA
Pin Functions
CK, /CK (input pin)
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross
point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross
point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and
the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK.
/CS (input pin)
When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 to A12 (input pins)
Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the
VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the
cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address
becomes the starting address of a burst operation.
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge
command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write
command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled.
BA0, BA1, BA2 (input pin)
BA0, BA1 and BA2 are bank select signals (BA). The memory array is divided into 8 banks: bank 0 to bank 7.
(See Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
BA2
Bank 0
L
L
L
Bank 1
H
L
L
Bank 2
L
H
L
Bank 3
H
H
L
Bank 4
L
L
H
Bank 5
H
L
H
Bank 6
L
H
H
Bank 7
H
H
H
Remark: H: VIH. L: VIL.
Data Sheet E1216E10 (Ver. 1.0)
23
EBE11UE6ACUA
CKE (input pin)
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the
CKE is driven low and exited when it resumes to high.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold
time tIH.
DQ (input and output pins)
Data are input to and output from these pins.
DQS and /DQS (input and output pin)
DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input).
DM (input pins)
DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and /DQS.
VDD (power supply pins)
1.8V is applied. (VDD is for the internal circuit.)
VDDSPD (power supply pin)
1.8V is applied (For serial EEPROM).
VSS (power supply pin)
Ground is connected.
Detailed Operation Part and Timing Waveforms
Refer to the EDE1108ACBG, EDE1116ACBG datasheet (E1173E).
Data Sheet E1216E10 (Ver. 1.0)
24
EBE11UE6ACUA
Physical Outline
Unit: mm
Front side
11.55
2.00 Min
17.55
3.80 Max
(DATUM -A-)
4x Full R
1
199
6.00
4.00 Min
Component area
(Front)
A
B
11.40
2.15
2.45
47.40
D
1.00 ± 0.10
67.60
Back side
63.60
2.45
2.15
Component area
(Back)
20.00
30.00
4.00
2
200
C
(DATUM -A-)
Detail A
Detail B
0.45 ± 0.03
Detail C
FULL R
2.70
4.20
4.00 ± 0.10
0.35 Max
2.55 Min
0.60
1.00 ± 0.10
Detail D
Contact pad
0.2 Max
0.35 Max
4.20
2.40
ECA-TS2-0209-01
Data Sheet E1216E10 (Ver. 1.0)
25
EBE11UE6ACUA
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
MDE0202
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E1216E10 (Ver. 1.0)
26
EBE11UE6ACUA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 ,
SO 2 , and NO x .
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0706
Data Sheet E1216E10 (Ver. 1.0)
27