HDA40U20GW VRRM = 200 V Ultra Fast Recovery Diode General Description IF = 2 x 20A trr = 20nS TO-247 With excellent performance in reverse recovery time, switching speed and rated current, HDA40U20GW can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. 1 2 3 Features High Breakdown Voltage High Speed Switching Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Value Unit 200 V IF(AV) Average Rectifier Forward Current (Per Diode) (Total Diode) 20 40 A IFSM Non-Rectifier Peak Surge Current @8.3ms (Per Diode) 200 A TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ Electrical Characteristics (Per Diode) Symbol Parameter Test Conditions Min Typ Max Unit IR = 50uA 200 -- -- V Forward Voltage IF = 20A, TC = 25℃ -- 0.95 1.05 V IR Reverse Current VR = 200V, TC = 25℃ -- -- 10 uA trr Reverse Recovery Time IF = 1A, di/dt = 200A/μs -- 20 -- ns IF = 20A, di/dt = 200A/μs -- 26 -- ns VBR Breakdown Voltage VF Thermal Resistance Characteristics Symbol RθJC Parameter Junction-to-Case (Per Diode) Typ. Max. Unit -- 1.0 ℃/W ◎ SEMIHOW REV.A2,.May 2015 HDA40U20GW May 2015 HDA40U20GW INSTANTANEOUS FORWARD CURRENT [A] AVERAGE FORWARD RECTIFIED CURRENT [A] Typical Characteristics (Per Diode) 25 20 15 10 5 0 25 50 75 100 125 150 10 TA=125oC TA=25oC 0.1 0.01 0.0 CASE TEMPERATURE [oC] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE [V] Figure 1. Forward Current Derating Curve Figure 2. Typical Forward Characterisitics 250 1000 JUNCTION CAPACITANCE [pF] INSTANTANEOUS REVERSE CURRENT [nA] TA=75oC 1 TA=125oC 100 TA=75oC 10 1 TA=25oC 0.1 0 50 100 150 200 REVERSE VOLTAGE [V] Figure 3. Typical Reverse Characteristics 200 150 100 50 1 10 100 REVERSE VOLTAGE [V] Figure 4. Typical Junction Capacitance ◎ SEMIHOW REV.A2,.May 2015 HDA40U20GW Package Dimension TO-247 ◎ SEMIHOW REV.A2,.May 2015