SMPS MOSFET
PD - 95293
IRF6216PbF
HEXFET® Power MOSFET
Applications
Reset Switch for Active Clamp Reset
DC-DC converters
l Lead-Free
VDSS
l
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l
-150V
S
S
S
G
RDS(on) max
ID
0.240W@VGS =-10V -2.2A
1
8
2
7
3
6
4
5
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
www.irf.com
1
06/06/05
IRF6216PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.240
Ω
VGS = -10V, ID = -1.3A
-5.0
V
VDS = VGS, ID = -250µA
-25
VDS = -150V, VGS = 0V
µA
-250
VDS = -120V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.2
15
18
15
33
26
1280
220
53
1290
99
220
Max. Units
Conditions
–––
S
VDS = -50V, ID = -1.3A
49
ID = -1.3A
11
nC
VDS = -120V
23
VGS = -10V,
–––
VDD = -75V
–––
I
D = -1.3A
ns
–––
RG = 6.5Ω
–––
VGS = -10V
–––
VGS = 0V
–––
VDS = -25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
200
-4.0
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.2
–––
–––
-19
–––
–––
–––
–––
80
310
-1.6
120
460
A
V
nS
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs
D
S
www.irf.com
IRF6216PbF
TOP
-I D, Drain-to-Source Current (A)
10
BOTTOM
100
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
1
-I D, Drain-to-Source Current (A)
100
-5.0V
0.1
10
-5.0V
1
0.1
0.01
1
10
20µs PULSE WIDTH
T J= 150 ° C
20µs PULSE WIDTH
T J= 25 ° C
0.1
BOTTOM
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
0.1
100
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D = -2.2A
TJ = 150 ° C
1
V DS= -50V
20µs PULSE WIDTH
0.1
5.0
5.5
6.0
6.5
7.0
7.5
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
8.0
(Normalized)
10
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
2.0
TJ = 25 ° C
1.5
1.0
0.5
V GS = -10V
0.0
-60
-40
-20
0
20
40
60
TJ , Junction Temperature
80
100
120
140
160
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6216PbF
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
ID = -1.3A
VDS = -120V
VDS = -75V
VDS = -30V
10
Ciss
1000
-V GS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
Coss
100
Crss
10
8
6
4
2
0
1
10
100
0
1000
15
20
25
30
35
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
-I D, Drain-to-Source Current (A)
100
-I SD, Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS= 0 V
0.4
0.6
0.8
1.0
-V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
0.1
0.1
4
5
1.2
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF6216PbF
2.5
RD
V DS
VGS
2.0
D.U.T.
-I D , Drain Current (A)
RG
-
VDD
+
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t1/ t 2
J = P DM x Z thJA
10
+T A
100
1000
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF6216PbF
R DS(on) , Drain-to -Source On Resistance (Ω)
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.23
0.22
VGS = -10V
0.21
0.20
0.19
0
2
4
6
8
10
12
14
16
1.50
1.00
0.50
ID = -2.2A
0.00
4.5
18
6.0
7.5
9.0
10.5
12.0
13.5
15.0
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
-VGS
50KΩ
.2µF
12V
QGS
.3µF
QGD
500
D.U.T.
+VDS
VG
TOP
VGS
400
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VDS
I AS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
Charge
-3mA
BOTTOM
300
200
100
0
25
tp
V(BR)DSS
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
ID
-1.8A
-3.2A
-4.0A
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF6216PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
7
6
5
6
H
E
0.25 [.010]
1
6X
2
3
INCHE S
DIM
B
A
4
e
e1
MAX
MIN
A
.0532
.0688
1.35
1.75
C
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
e1
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIME T E RS
MIN
A1
8X L
8X c
7
C A B
F OOT PRINT
NOT E S :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIME T E RS [INCHES ].
4. OU T LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RU S IONS NOT T O EXCEE D 0.15 [.006].
6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RU S IONS NOT T O EXCEE D 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O
A S UB S T RAT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE : T HIS IS AN IRF 7101 (MOS F ET )
INT E RNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S LE AD-FRE E
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WE EK
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMB ER
www.irf.com
7
IRF6216PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 25mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
RG = 25Ω, IAS = -4.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/05
8
www.irf.com