BTA04 T/D/S/A BTB04 T/D/S/A ® SENSITIVE GATE TRIACS A2 FEATURES Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) ■ ■ G ■ A1 DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. A1 A2 G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Parameter RMS on-state current (360° conduction angle) BTA Tc = 90°C BTB Tc = 95°C Value Unit 4 A A Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 42 tp = 10ms 40 I2t value tp = 10ms 8 A2s Critical rate of rise of on-state current Gate supply: IG = 50mA dIG/dt = 0.1A/µs Repetitive F = 50Hz 10 A/µs Non repetitive 50 Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case -40 to +150 -40 to +110 °C 260 °C BTA / BTB04Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 110°C September 2001 - Ed: 1A Unit 400 T/D/S/A 600 T/D/S/A 700 T/D/S/A 400 600 700 V 1/6 BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Parameter Rth (j-a) Value Unit 60 °C/W BTA 4.4 °C/W BTB 3.2 BTA 3.3 BTB 2.4 Junction to ambient Rth (j-c) DC Rth (j-c) AC Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) °C/W VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Quadrant Tj = 25°C Unit T D S A I - II - III MAX. 5 5 10 10 IV MAX. 5 10 10 25 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III - IV MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V 2 µs tgt VD = VDRM IG = 40mA dIG/dt = 0.5A/µs Tj = 25°C I - II - III - IV TYP. IL IG = 1.2IGT Tj = 25°C I - III - IV TYP. II IH* 10 10 20 20 20 20 40 40 15 15 25 25 mA IT = 100mA Gate open Tj = 25°C MAX. VTM * ITM = 5.5A Tj = 25°C MAX. 1.65 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 0.75 Tj = 110°C TYP. 10 10 - - MIN. - - 10 10 TYP. 1 1 5 5 dV/dt * (dI/dt)c* tp = 380µs Linear slope up to VD = 67% VDRM gate open (dI/dt)c = 1.8A/ms Tj = 110°C * For either polarity of electrode A2 voltage with reference to electrode A1 2/6 mA V/µs V/µs BTA04 T/D/S/A BTB04 T/D/S/A PRODUCT INFORMATION IT(RMS) VDRM / VRRM A V T 4 400 X 600 X 700 X 400 X 600 X Sensitivity Specification Package BTA (Insulated) BTB (Uninsulated) D S A X X X X X ORDERING INFORMATION BT Triac Series A 04 - 400 T Sensitivity Insulation: A: insulated B: non insulated Current: 04A Voltage: 400: 400V 600: 600V 700: 700V 3/6 BTA04 T/D/S/A BTB04 T/D/S/A Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. Fig. 5: Relative variation of thermal impedance versus pulse duration. Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 4/6 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 BTA04 T/D/S/A Fig. 7: Non repetitive surge peak on-state current versus number of cycles. BTB04 T/D/S/A Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: On-state characteristics (maximum values). 5/6 BTA04 T/D/S/A BTB04 T/D/S/A PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B Millimeters Inches Min. Typ. Max. Min. Typ. Max. C b2 A 15.20 a1 L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e 15.90 0.598 3.75 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 OTHER INFORMATION ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB04-xxxy BTA/BTB04-xxxy TO-220AB 2.3 g 250 Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6