Type
BSC900N20NS3 G
$(*'#$%TM3 Power-Transistor
Product Summary
Features
9 /2*, *7&% '.0% $ % $ $ .- 4&01*.9 $ )" - - &+ - .0, " ++&4&+
VDS
200
V
RDS(on),max
90
m#
ID
15.2
A
9 6$ &++&- 2 (" 2& $ )" 0(& 6 R DS(on) product (FOM)
9 .5 .- 0&1*12" - $ & R DS(on)
PG-TDSON-8
9 8 ./&0" 2*- ( 2&, /&0" 230&
9 # '0&& +&" % /+" 2*- ( .
$ ., /+*" - 2
9 3" +*'*&% " $ $ .0% *- ( 2. 1)
for target application
9 " +.(&- '0&& " $ $ .0% *- ( 2. Type
Package
Marking
BSC900N20NS3 G
PG-TDSON-8
900N20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
15.2
T C=100 °C
10.7
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
61
Avalanche energy, single pulse
E AS
I D=7.6 A, R GS=25 #
100
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
62.5
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
2)
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.1
page 1
2010-09-01
BSC900N20NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2
-
-
50
200
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area3)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=30 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=160 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=7.6 A
-
77
90
m#
Gate resistance
RG
-
2.2
-
#
Transconductance
g fs
8
16
-
S
|V DS|>2|I D|R DS(on)max,
I D=7.6 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2010-09-01
BSC900N20NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
690
920
-
52
69
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
5.2
-
Turn-on delay time
t d(on)
-
5
-
Rise time
tr
-
4
-
Turn-off delay time
t d(off)
-
10
-
Fall time
tf
-
3
-
Gate to source charge
Q gs
-
3.1
-
Gate to drain charge
Q gd
-
1.3
-
Switching charge
Q sw
-
2.4
-
Gate charge total
Qg
-
9
11.6
Gate plateau voltage
V plateau
-
4.5
-
Output charge
Q oss
-
20
26
-
-
15.2
-
-
61
-
1
1.2
V
-
86
-
ns
-
309
-
nC
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=7.6 A,
R G=1.6 #
pF
ns
Gate Charge Characteristics4)
V DD=100 V, I D=7.6 A,
V GS=0 to 10 V
V DD=100 V, V GS=0 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
A
T C=25 °C
V GS=0 V, I F=15.2 A,
T j=25 °C
V R=100 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2010-09-01
BSC900N20NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS:
!
16
70
14
60
12
50
ID [A]
Ptot [W]
10
40
8
30
6
20
4
10
2
0
0
0
40
80
120
0
160
40
80
TC [&C]
120
160
TC [&C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
102
101
1 µs
10 µs
101
ZthJC [K/W]
100 µs
ID [A]
1 ms
0.5
100
0.2
10 ms
100
0.1
DC
0.05
0.02
0.01
single pulse
10-1
10-1
10-1
100
101
102
103
VDS [V]
Rev. 2.1
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2010-09-01
BSC900N20NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
160
10 V
25
7V
6V
120
5.5 V
5V
RDS(on) [m ]
ID [A]
20
5V
15
5.5 V
6V
8V
80
10 V
10
40
4.5 V
5
0
0
0
1
2
3
4
5
0
4
8
VDS [V]
12
16
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
40
32
35
28
30
24
25
20
gfs [S]
ID [A]
parameter: T j
20
16
15
12
10
8
150 °C
5
4
25 °C
0
0
0
2
4
6
8
5
10
15
20
25
30
ID [A]
VGS [V]
Rev. 2.1
0
page 5
2010-09-01
BSC900N20NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=7.6 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
250
4
3.5
200
300 µA
3
150
VGS(th) [V]
RDS(on) [m ]
30 µA
2.5
98 %
100
2
1.5
typ
1
50
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [&C]
60
100
140
180
Tj [&C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
103
100
Ciss
Coss
25 °C
102
150 °C, 98%
IF [A]
C [pF]
10
150 °C
101
25 °C, 98%
1
Crss
100
0.1
0
40
80
120
160
VDS [V]
Rev. 2.1
0
0.5
1
1.5
2
VSD [V]
page 6
2010-09-01
BSC900N20NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 #
V GS=f(Q gate); I D=7.6 A pulsed
parameter: T j(start)
parameter: V DD
10
160 V
8
100 V
VGS [V]
6
40 V
4
2
0
0
1
2
3
4
5
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
230
VBR(DSS) [V]
220
210
200
190
180
-60
-20
20
60
Tj [&C]
100
140
180
6
7
8
9
BSC900N20NS3 G
Package Outline:PG-TDSON-8
Rev. 2.1
page 8
2010-09-01
BSC900N20NS3 G
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Rev. 2.1
page 9
2010-09-01