Central CDSH270 Silicon schottky diode Datasheet

CDSH270
SILICON SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDSH270 silicon
Schottky diode is designed to replace the 1N270
Germanium diode. Some advantages over the 1N270
are lower forward voltage, lower leakage current, faster
switching speed, and a more robust package.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25 °C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
IF
100
UNITS
V
100
mA
IFRM
IFSM
350
mA
750
mA
PD
TJ
100
mW
-65 to +125
°C
-65 to +150
°C
300
°C/W
Tstg
ΘJA
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
VR=50V
VR=50V, TA=100°C
MAX
100
UNITS
nA
20
μA
VF
IF=1.0mA
0.45
V
VF
IF=100mA
VF
IF=200mA
1.0
V
CJ
VR=10V, f=1.0MHz
0.9
1.2
V
pF
R1 (16-August 2012)
CDSH270
SILICON SCHOTTKY DIODE
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R1 (16-August 2012)
w w w. c e n t r a l s e m i . c o m
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