CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster switching speed, and a more robust package. MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25 °C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VRRM IF 100 UNITS V 100 mA IFRM IFSM 350 mA 750 mA PD TJ 100 mW -65 to +125 °C -65 to +150 °C 300 °C/W Tstg ΘJA ELECTRICAL SYMBOL IR IR CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS TYP VR=50V VR=50V, TA=100°C MAX 100 UNITS nA 20 μA VF IF=1.0mA 0.45 V VF IF=100mA VF IF=200mA 1.0 V CJ VR=10V, f=1.0MHz 0.9 1.2 V pF R1 (16-August 2012) CDSH270 SILICON SCHOTTKY DIODE DO-35 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (16-August 2012) w w w. c e n t r a l s e m i . c o m