BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 carrier W-CDMA 2300 to 2400 900 28 30 18.7 33 - 40[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-100 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G24LS-100 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G24L-100 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G24LS-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 28 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLF7G24L-100_7G24LS-100 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 100 W 0.3 K/W All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25.1 29 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 500 nA gfs forward transconductance VDS = 10 V; ID = 5.35 A - 10.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 - 7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified. Symbol Parameter PL(AV) average output power Conditions - Min Typ Max Unit 20 - W Gp power gain 17.3 18 - dB RLin input return loss - 14 - dB D drain efficiency 22 27 % ACPR885k adjacent channel power ratio (885 kHz) - 46 40 - dBc 7.1 Ruggedness in class-AB operation The BLF7G24L-100 and BLF7G24LS-100 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 100 W (CW); f = 2300 MHz. BLF7G24L-100_7G24LS-100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 001aan495 19.5 ηD (%) (2) Gp (dB) 001aan496 50 (1) 40 (2) (1) 18.5 30 20 17.5 10 0 16.5 0 20 40 60 80 0 20 40 60 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 1. 80 PL (W) Single carrier IS-95 power gain as a function of load power; typical values 001aan497 −20 Fig 2. Single carrier IS-95 drain efficiency as a function of load power; typical values 001aan498 −30 APCR885 (dBc) APCR1980 (dBc) −30 −40 (2) −40 −50 (2) (1) (1) −50 −60 −60 −70 −70 0 20 40 60 80 −80 0 20 40 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values BLF7G24L-100_7G24LS-100 Product data sheet 80 PL (W) (1) f = 2300 MHz Fig 3. 60 Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 001aan499 12 001aan500 200 PL(M) (W) PAR (dB) (1) 160 (2) 8 120 (1) 80 4 (2) 40 0 0 0 20 40 60 80 0 20 40 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G24L-100_7G24LS-100 Product data sheet 80 PL (W) (1) f = 2300 MHz Fig 5. 60 Fig 6. Single carrier IS-95 peak power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.3 Pulsed CW 001aan501 19.5 ηD (%) (2) Gp (dB) 001aan502 60 50 (2) (1) 18.5 (1) 40 30 17.5 20 10 16.5 0 40 80 120 160 0 40 80 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Pulsed CW power gain as a function of load power; typical values BLF7G24L-100_7G24LS-100 Product data sheet 160 PL (W) (1) f = 2300 MHz Fig 7. 120 Fig 8. Pulsed CW drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aan503 19.5 001aan504 60 ηD (%) Gp (dB) 50 (2) 18.5 40 (1) (1) (2) 30 17.5 20 10 16.5 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 900 mA. 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier W-CDMA power gain as a function of load power; typical values 001aan505 −10 80 100 PL (W) Fig 10. Single carrier W-CDMA drain efficiency as a function of load power; typical values 001aan506 −20 APCR5M (dBc) APCR10M (dBc) −20 −30 −30 60 VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz Fig 9. 40 −40 (2) (2) (1) −40 −50 (1) −50 −60 −60 0 20 40 60 80 100 PL (W) −70 VDS = 28 V; IDq = 900 mA. 0 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values Product data sheet 60 80 100 PL (W) VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz BLF7G24L-100_7G24LS-100 40 Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 001aan507 8 001aan508 250 PL(M) (W) PAR (dB) 200 6 (1) (1) 150 (2) (2) 4 100 2 50 0 0 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 900 mA. 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values Product data sheet 60 80 100 PL (W) VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz BLF7G24L-100_7G24LS-100 40 Fig 14. Single carrier W-CDMA peak output power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 15. Package outline SOT502A BLF7G24L-100_7G24LS-100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 16. Package outline SOT502B BLF7G24L-100_7G24LS-100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 9. Revision history Document ID Release date Data sheet status BLF7G24L-100_7G24LS-100 v.4 20110722 Modifications: • Product data sheet Change notice Supersedes - BLF7G24L-100_7G24LS-100 v.3 The status of this data sheet has been changed to Product data sheet BLF7G24L-100_7G24LS-100 v.3 20110405 Preliminary data sheet - BLF7G24L-100_7G24LS-100 v.2 BLF7G24L-100_7G24LS-100 v.2 20100714 Objective data sheet - BLF7G24L-100_7G24LS-100 v.1 BLF7G24L-100_7G24LS-100 v.1 20100414 Objective data sheet - - BLF7G24L-100_7G24LS-100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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All rights reserved. 12 of 14 NXP Semiconductors BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G24L-100_7G24LS-100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 NXP Semiconductors BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 July 2011 Document identifier: BLF7G24L-100_7G24LS-100