., Line. <$Eini-C,onduct:oi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 D45D Series FAX: (973) 376-8960 -40 - (-80) VOLTS -6 AMP, 30 WATTS VERY HIGH GAIN PNP POWER DARLINGTON TRANSISTORS COMPLEMENTARY TO THE D44D SERIES CASE STYLE TO-220AB Applications: DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .116(2.95) • Solenoid Driver • Lamp Driver CASE TEMPERATURE REFERENCE POINT • Relay Substitute • Switching Regulator • Inverter/Converter 02'I053I .016(0.38) TYPS TO-220-A8 TERM 1 TERM 2 Ti-RM 3 TAB BASE COUECTOB EMI^TEP COLLECTOR maximum ratings O~A = 25°C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Base Current — Continuous Total Power Dissipation @ TA = 25° C @T C = 25°C Operating and Storage Junction Temperature Range D45D1.2 -40 -50 -5 6 .5 2.1 30 D45D3.4 -60 -70 -5 6 .5 2.1 30 D45D5.6 -80 -90 -5 6 .5 2.1 30 UNITS Volts Volts Volts A A Watts TJ, TSTG -55 to +150 -55to+150 -55 to +150 °C RAJA R&JC 60 60 4.2 60 °C/W 4.2 4.2 °c/w TL 260 260 260 °c SYMBOL VCEO VCES VEBO jc IB PD thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: V4" from Case for 5 Seconds NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL | MIN TYP MAX D45D1.2 D45D3.4 D45D5.6 VCEO(BR) -40 -60 -80 — — TC = 25° C Tc = 1 25° C ICES ICEV - -10 -5 MA — -10 MA UNIT off characteristics'1' Collector-Emitter Breakdown Voltage Ic = -50mA) Collector Cut-off Current (VCE = Rated VCES) (VCE = Rated VCES- VBE = -0-4V) Emitter Cutoff Current (VEB = -5V) Volts — IEBO second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 5 on characteristics DC Current Gain (ic = -1A, vCE = -2V) Collector-Emitter Saturation Voltage (lc = -3A, IB = -3mA) (lc = -5A, 1 B = -5mA) D45D2.4.6 only Base-Emitter Saturation Voltage (IC = -5A, IB = -5mA) — — -1.5 -2.0 V V — -2.5 Volts — — -75 PF td + tr — 0.35 — MS ts — 0.4 — tf — 0.3 — HFE 2,000 VCE (sat) — vBE(sat) — CCBO 5,000 dynamic characteristics Collector Capacitance (VcE = 10V, f=1MHz) switching characteristics Resistive Load Delay Time + Rise Time lc = -3A, IBI = lB2 = -3mA Storage Time VCc = 40V, tp = 25 /xsec Fall Time (1) Pulse Test: PW < 300ms Duty Cycle < 2%. IOO JUNCTION TO AMBIENT -100 f- -60 « -40 VC6 • -IOV CL Ic - COLLECTOR CURRENT - MIL 1 -*° VCE* IOV Tj = 15 ,-5 10 ,-4 10 0" 10" I TIME - SECONDS 10 10' FIG. 1 MAXIMUM TRANSIENT THERMAL IMPEDANCE 10 "0 / / / Tj 2VC/ / [ / / -, _ O.I «J / j J Tc O O I .1 .1 .1 i I ' l * en '_ ro A en — ro t2 / / I .l JUNCTION TO CASE / / x' /^ / s* Z-h/ f i TJ// // 2. O ro UJ > en -! -10 2 -.I -/-I s* _*-4 i F^ y.„-"' P*== / / / -55-C -.2 -.3 -.4 -.5 -.6 -.7 -.8 -.9 -I.O -I.I -I.2 -I.S -I.4 -I.9 -I.6 -1.7 -1.8 VBE - BASE TO E M I T T E R VOLTAGE - VOLTS FIG. 2 TYPICAL TRANSCONDUCTANCE CHARACTERISTICS