SMD Efficient Fast Recovery Rectifiers CEFA101-G Thru. CEFA105-G Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Super fast recovery time for high efficient. -Built-in strain relief. -Low forward voltage drop. 0.209(5.31) 0.185(4.70) Mechanical data -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CEFA101-G CEFA102-G CEFA103-G CEFA104-G CEFA105-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 V Max. DC blocking voltage VDC 50 100 200 400 600 V Max. RMS voltage VRMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF 0.92 1.25 1.3 V Reverse recovery time Trr 25 35 50 nS Max. DC reverse current at TA=25 rated DC blocking voltage TA=100 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O IR 5.0 200 RθJL 25 TJ 150 O C TSTG -55 to +150 O C μA O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area. REV:A Page 1 QW-BE001 Comchip Technology CO., LTD. SMD Efficient Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CEFA101-G thru CEFA105-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 CEFA101-G~103-G O TJ=125 C 1 F o r w a rd C u rren t(A) Rever s e C urr e n t (μA ) 10 TJ=75 OC 1 0.1 CEFA104-G CEFA105-G 0.1 0.01 TJ=25 OC O TJ=25 C Pulse width 300μS 4% duty cycle 0.01 0.001 0 30 60 90 120 0 150 0.4 0.8 1.6 1.2 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 35 50 O J u n c ti o n C apacian t ce(p F ) 30 Peak F or ward Surge C ur re nt A ( ) TJ=25 OC f=1MHz and applied 4VDC reverse voltage 25 20 CEFA101-G~103-G 15 CEFA104-G~105-G 10 5 TJ=25 C 8.3ms single half sine wave, JEDEC method 40 30 20 10 0 0 0.01 0.1 1 10 100 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 10Ω NONINDUCTIVE Average Forward Current (A) 50Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 2.4 2.0 1.6 1.2 Single phase Half wave 60Hz 0.8 0.4 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 Ambient Temperature ( 150 O 175 C) REV:A Page 2 QW-BE001 Comchip Technology CO., LTD.