MBR2530CT thru MBR2540CT High Tjm Low IRRM Schottky Barrier Diodes A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR2530CT MBR2535CT MBR2540CT Symbol VRRM V 30 35 40 VRMS V 21 24.5 28 VDC V 30 35 40 Characteristics 30 A 150 A 10000 V/us @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.82 0.73 V @TJ=25oC @TJ=125oC 0.2 40 mA @TC=130oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Per Leg) At (Note 1) IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 1.5 CJ Typical Junction Capacitance Per Element (Note 3) 450 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Unit Maximum Average Forward Rectified Current IF=15A IF=15A IF=30A IF=30A Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * RoHS compliant P1 MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 2 grams * Mounting position: Any ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com C C MBR2530CT thru MBR2540CT High Tjm Low IRRM Schottky Barrier Diodes FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 150 40 125 30 100 20 10 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 175 75 50 25 0 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 100.0 TJ = 125 C 10.0 1.0 TJ = 75 C 0.1 TJ = 25 C 0.01 0.001 20 10 NUMBER OF CYCLES AT 60Hz 10 TJ = 150 C TJ = 25 C 1.0 0.1 PULSE WIDTH 300us 2% Duty cycle 0.01 0 20 40 60 80 100 120 140 0 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE CAPACITANCE , (pF) 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com