Sirectifier MBR2535CT High tjm low irrm schottky barrier diode Datasheet

MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
MBR2530CT
MBR2535CT
MBR2540CT
Symbol
VRRM
V
30
35
40
VRMS
V
21
24.5
28
VDC
V
30
35
40
Characteristics
30
A
150
A
10000
V/us
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
0.82
0.73
V
@TJ=25oC
@TJ=125oC
0.2
40
mA
@TC=130oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
VF
Maximum Forward Voltage
(Per Leg) At (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
1.5
CJ
Typical Junction Capacitance Per Element (Note 3)
450
TJ
Operating Temperature Range
ROJC
TSTG
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Unit
Maximum Average Forward Rectified Current
IF=15A
IF=15A
IF=30A
IF=30A
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
P1
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
C
C
MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
150
40
125
30
100
20
10
RESISTIVE OR
INDUCTIVE LOAD
0
25
50
75
100
125
150
175
75
50
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
100.0
TJ = 125 C
10.0
1.0
TJ = 75 C
0.1
TJ = 25 C
0.01
0.001
20
10
NUMBER OF CYCLES AT 60Hz
10
TJ = 150 C
TJ = 25 C
1.0
0.1
PULSE WIDTH 300us
2% Duty cycle
0.01
0
20
40
60 80
100
120
140
0
0.1
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
10000
1000
TJ = 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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