AP4506GEM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
D1
RDS(ON)
D1
▼ Fast Switching Performance
30mΩ
ID
G2
6.4A
P-CH BVDSS
S2
SO-8
30V
G1
S1
-30V
RDS(ON)
40mΩ
ID
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and costeffectiveness.
-6A
D1
G1
D2
G2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
6.4
-6.0
A
Continuous Drain Current
3
5.1
-4.8
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2.0
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200902103
AP4506GEM
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
-
30
mΩ
VGS=4.5V, ID=4A
-
-
36
mΩ
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=6A
-
8.3
13
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
5.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=15Ω
-
3.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
575
920
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
2
AP4506GEM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-5A
-
-
40
mΩ
VGS=-4.5V, ID=-3A
-
-
52
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=-5A
-
12.6
20
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.2
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
7
-
ns
tr
Rise Time
ID=-1A
-
5.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=15Ω
-
35
-
ns
Ciss
Input Capacitance
VGS=0V
-
1045 1670
pF
Coss
Output Capacitance
VDS=-20V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Min.
Typ.
IS=-1.5A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4506GEM
N-Channel
30
30
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
20
V G =3.0V
10
20
V G =3.0V
10
0
0
0
1
2
3
4
0
5
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
1.8
ID=6A
V G =10V
ID=4A
26
T A =25 o C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
T A = 150 C
ID , Drain Current (A)
o
T A = 25 C
24
22
1.4
1.2
20
1.0
18
0.8
16
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
Normalized VGS(th) (V)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4506GEM
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =24V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
Single Pulse
0.01
0.1
1
10
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4506GEM
P-Channel
30
30
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
20
V G = - 3.0V
10
20
V G = - 3.0V
10
0
0
0
1
2
3
4
0
5
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
44
1.6
I D = -5A
V G = -10V
I D = -3 A
T A = 25 o C
1.4
Normalized RDS(ON)
40
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
o
T A = 150 C
-ID , Drain Current (A)
o
T A = 25 C
36
32
1.2
1.0
0.8
28
0.6
24
2
4
6
8
-50
10
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
Normalized -VGS(th) (V)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4506GEM
P-Channel
f=1.0MHz
10000
I D = -5 A
V DS = -24 V
C iss
1000
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
C oss
C rss
100
4
10
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10ms
1
100ms
1s
0.1
o
T c =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7