650V,5.5A N-Channel Power MOSFET EC744N65 C o n v e r t e r Features ◆ 650V, 5.5A, RDS(ON)(Max.) = 2.5Ω @ VGS = 10V ◆ Low ON Resistance ◆ Low Gate Charge ◆ Peak Current vs. Pulse Width Curve ◆ RoHS Compliant/Lead Free Package Applications SMPS Power Supply Adaptor /Charger TV Main Power LCD Panel Power Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage a 650 V VGS Gate-Source Voltage 30 V Drain Current-Continuous, TC =25 ℃ 5.5 A Drain Current-Continuous, TC =100 ℃ 3.3 A 22 A 60 W 0.43 W/ ℃ 81 mJ 300 ℃ TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds TJ, TSTG Operating and Store Temperature Range -55 to 150 ID Drain Current-Pulsed IDM PD EAS TL b Maximum Power Dissipation @ TJ =25 ℃ Derating Factor Single Pulsed Avalanche Energy e 260 ℃ Thermal Characteristics Symbol Parameter Value Unit R θ JC Thermal Resistance, Junction-Case Max. 2.1 ℃/W R θ JA Thermal Resistance, Junction-Ambient Max. 62 ℃/W E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 4J06N-Rev.F001 EC744N65 650V,5.5A N-Channel Power MOSFET Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics Symbol Parameter Test Condition Min. BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA 650 - - V BVDSS TJ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250 µA - 0.63 - V/ ℃ VDS =650V, VGS = 0V - - 25 µA VDS=520V, VGS=0V TJ=125 ℃ - - 250 µA IDSS Zero Gate Voltage Drain Current Typ. Max. Unit IGSSF Forward Gate Body Leakage Current VGS = 30V, VDS = 0V - - 100 nA IGSSR Reverse Gate Body Leakage Current VGS = -30V, VDS = 0V - - -100 nA VGS = VDS, ID = 250µA ■ On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1.85A gFS Forward Transconductance VDS = 15V, ID = 1.85A 2.5 2.93 4.5 V d - 1.9 2.5 Ω d - 3.02 - S ■ Dynamic Characteristics Ciss Input Capacitance VDS = 25V, - 733 - pF Coss Output Capacitance - 95 Reverse Transfer Capacitance - 22 - pF Crss VGS = 0V, f = 1.0 MHz pF ■ Switching Characteristics td(on) Turn-On Delay Time VDD = 325V, - 20 - ns tr Turn-On Rise Time ID = 3.7A, - 6 - ns td(off) Turn-Off Delay Time VGS = 10V - 35 - ns tf Turn-Off Fall Time RG=9.1Ω - 8 ns - 18 - nC - 3.1 - nC - 8 - nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge E-CMOS Corp. (www.ecmos.com.tw) VDD=325V ID=3.7A Page 2 of 5 4J06N-Rev.F001 C o n v e r t e r EC744N65 650V,5.5A N-Channel Power MOSFET ■ Drain-Source Diode Characteristics Drain-Source Diode Forward IS VGS = 0V - - 3.7 A VGS =0V - - 14.8 A VGS = 0V, IS = 3.7A - 0.86 1.5 V Continuous Current Maximum Pulsed Current ISM VSD Notes : Drain-Source Diode Forward Voltage a. TJ = +25 ℃ to +150 ℃. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD= 3.7A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 ℃. d. Pulse width≦ 380 μs; duty cycle≦ 2%. e. L=10mH, VDD =90V, IAS =3.7A, RG =25Ω Starting TJ =150 ℃. Figure 1 . Normalized Effective Transient Thermal Impedance With Pulse Duration Figure3 Maximum Safe Operating Area Figure 2. Normalized On-Resistance Variation with Temperature E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J06N-Rev.F001 C o n v e r t e r 650V,5.5A N-Channel Power MOSFET EC744N65 C o n v e r t e r Figure 4. Capacitance Characteristics Figure 4. Gate Threshold Variation With Temperature Figure 6. On-State Characteristics Figure 8. Gate Threshold Variation with Temperature E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 5 Figure 5. Gate Charge Characteristics Figure 5. On-state Characteristics Figure 7. Body Diode Forward Voltage Variation with Source Current Figure 9. Transfer Characteristics 4J06N-Rev.F001 650V,5.5A N-Channel Power MOSFET EC744N65 ORDERING INFORMATION Part Number Package EC744N65A3R TO-251-3L EC744N65A4R TO-252-3L E-CMOS Corp. (www.ecmos.com.tw) Marking 744N65 LLLLL YYWW Page 5 of 5 Marking Information 1. LLLLL：Lot No. 2. YY：Year code 3. WW：Week code 4J06N-Rev.F001 C o n v e r t e r