Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) 120 W (PEAK), 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching for Broadband Operation CASE 355C–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 15 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 380 2.17 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Junction Temperature TJ 200 Symbol Max Unit RθJC 0.46 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 8 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 — — — ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%) Common–Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) GPB 7.6 8.5 — dB Collector Efficiency (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) η 50 55 — % Load Mismatch (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz, VSWR = 3:1 All Phase Angles) ψ No Degradation in Output Power * '-, &% # "&% * * * * * * * # !&%"&% * C1 — 270 pF 100 Mil Chip Capacitor C2 — 220 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 47 µF 50 V Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Z1–Z9 — Microstrip, See Details Board Material — Teflon/Glass Laminate, Dielectric Thickness = 0.030″, εr = 2.55, 2 Oz. Copper $! $ $ Figure 1. Test Circuit REV 8 2 "!&%"&%"!(#(%%$94 8>= "!&%"&%"!(#(%%$94 8>= / B ' ' "27 "&% "!(# (%%$ 94 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power / B / B ' ' "27 "&% "!(# (%%$ 94 ' ' "8>= C / B ( *27 !$ 3 3 3 3 3 / B ' ' "8>= / B C ( *! !$ 3 3 3 3 3 C *! 873>0+=. 8/ =1. 89=26>6 58+- 269.-+7,. 27=8 @12,1 =1. -.?2,. 8>=D 9>= 89.;+=.< += + 02?.7 8>=9>= 98@.; ?85=+0. +7- /;.:>.7,A Figure 4. Series Equivalent Input Impedances REV 8 3 Figure 5. Series Equivalent Output Impedance PACKAGE DIMENSIONS !%$ $! %!# "# $ ) ! %#! $! –A– M U Q 2 PL % R –B– K 2 PL D J N H E $%) " !%!# %%# $ C –T– CASE 355C–02 ISSUE C Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 8 4 # $ # $