EC732129H3
-20V、-6A P-Channel MOS
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Features
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 150℃ operating temperature
Main Product Characteristics
VDSS
-20V
SSF2129H3
RDS(on)
21mΩ (typ.)
ID
-6.0A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
-6
IDM
Pulsed Drain Current ②
-24
Power Dissipation ③
2.0
W
Linear Derating Factor
0.016
W/°C
VDS
Drain-Source Voltage
-20
V
VGS
Gate-to-Source Voltage
±8
V
TJ TSTG
Operating Junction and Storage Temperature
Range
-55 to +150
°C
PD @TC = 25°C
A
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
40
℃/W
RθJA
Junction-to-ambient (t≤10s) ④
—
78
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
4J01N-Rev.F002
EC732129H3
-20V、-6A P-Channel MOS
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Symbol
Parameter
V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Min.
Typ.
Max.
Units
-20
—
—
V
—
21
30
—
33
40
-0.4
—
-1.5
—
—
1
—
—
50
—
—
100
—
—
-100
Qg
Total gate charge
—
24
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
5.6
—
td(on)
Turn-on delay time
—
8.1
—
Rise time
—
15.2
—
Turn-Off delay time
—
98
—
Fall time
—
35
—
Ciss
Input capacitance
—
2819
—
Coss
Output capacitance
—
262
—
Crss
Reverse transfer capacitance
—
196
—
tr
td(off)
tf
mΩ
Conditions
VGS = 0V, ID = -250μA
VGS=-4.5V,ID = -6A
VGS=-2.5V,ID = -5.3A
V
VDS = VGS, ID = -250μA
μA
VDS = -20V,VGS = 0V
TJ
= 125℃
T
J =125
℃
nA
nC
ns
pF
VGS = 8V
VGS = -8V
ID = -6A,
VDS=-10V,
V
DS = -10V
VGS
=-5V
VDS=-10V,
V
GS = -5V
VGS
=-5V
VDS=-10V,
V
GS=-4.5V,
VGS
=-5V VDS=-10V,
ID = -1A,
RGEN=6Ω
VGS = 0V
VDS = -10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min.
Typ.
Max.
Units
—
—
-6
A
(Body Diode)
Pulsed Source Current
(Body Diode)
—
—
-24
A
VSD
Diode Forward Voltage
—
—
-1.0
V
Page 2 of 5
MOSFET symbol
showing the
integral reverse
ISM
E-CMOS Corp. (www.ecmos.com.tw)
Conditions
p-n junction diode.
IS=-2.9A, VGS=0V
4J01N-Rev.F002
-20V、-6A P-Channel MOS
EC732129H3
Test circuits and Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 5
4J01N-Rev.F002
-20V、-6A P-Channel MOS
EC732129H3
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 5
4J01N-Rev.F002
-20V、-6A P-Channel MOS
EC732129H3
Ordering and Marking Information
EC732129H3 XX X
R：Tape & Reel
T：Tube
M1：SOP 8L
Part Number
EC732129H3M1R
EC732129H3M1T
E-CMOS Corp. (www.ecmos.com.tw)
Package
Marking
SOP-8L
SSF2129H3
Page 5 of 5
4J01N-Rev.F002