NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) Typ −12 V 133 mW @ −1.8 V • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs SC−88 (SOT−363) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGS ±12 V ID −2.7 A Continuous Drain Current (Note 1) Steady State TA = 25 °C TA = 85 °C −2.0 t≤5s TA = 25 °C −3.3 Steady State TA = 25 °C PD 0.625 W tp = 10 ms IDM −8.0 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −0.8 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Power Dissipation (Note 1) Pulsed Drain Current Operating Junction and Storage Temperature D 1 6 D D 2 5 D G 3 4 S Top View Symbol Max Units Junction−to−Ambient – Steady State RqJA 200 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 141 Junction−to−Lead – Steady State RqJL 102 3 kW S MARKING DIAGRAM & PIN ASSIGNMENT D 1 D TJ M G S TJ M G G SC−88/SOT−363 CASE 419B STYLE 28 D 6 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). D G THERMAL RESISTANCE RATINGS (Note 1) Parameter −3.3 A 67 mW @ −2.5 V Applications Parameter ID Max 45 mW @ −4.5 V D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTJS3151/D NTJS3151P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −12 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS V 10 −1.0 mA VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA VGS = −9.6 V, VDS = 0 V TJ = 25°C mV/°C TJ = 125°C −2.5 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 100 mA −0.40 V 3.4 mV/°C VGS = −4.5 V, ID = −3.3 A 45 60 VGS = −2.5 V, ID = −2.9 A 67 90 VGS = −1.8 V, ID = −1.0 A 133 160 VGS = −10 V, ID = −3.3 A 15 S 850 pF mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −12 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Resistance 170 110 nC 8.6 VGS = −4.5 V, VDS = −5.0 V, ID = −3.3 A 1.3 2.2 RG 3000 W td(ON) 0.86 ms SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = −4.5 V, VDD = −6.0 V, ID = −1.0 A, RG = 6.0 W tf 1.5 3.5 3.9 DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VSD VGS = 0 V, IS = −3.3 A TJ = 25°C −0.85 TJ = 125°C −0.7 2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 −1.2 V NTJS3151P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 TJ = 25°C VGS = −4.5 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 8 VGS = −3.4 V 6 −2 V −2.4 V 4 2 −1.6 V 0 −1.4 V −1.2 V 1 0 2 4 3 VDS ≤ −12 V 6 4 125°C 2 25°C TJ = −55°C 0 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.1 VGS = −4.5 V 0.075 TJ = 125°C 0.05 TJ = 25°C TJ = −55°C 0.025 0 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 −ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.5 0.4 0.3 0.2 0 0.5 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 −50 −25 0 25 50 75 100 125 1.5 2.5 3.5 4.5 5.5 6.5 7.5 −ID, DRAIN CURRENT (AMPS) 100000 ID = −3.3 A VGS = −4.5 V VGS = −4.5 V Figure 4. On−Resistance vs. Drain Current and Gate Voltage −IDSS, LEAKAGE CURRENT (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 VGS = −2.5 V 0.1 Figure 3. On−Resistance vs. Drain Current and Temperature 2.0 TJ = 25°C VGS = −1.8 V 150 VGS = 0 V 10000 TJ = 150°C 1000 TJ = 125°C 100 0 TJ, JUNCTION TEMPERATURE (°C) 2 8 4 6 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 12 NTJS3151P 1600 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1400 1200 1000 Ciss 800 600 400 Coss 200 0 Crss 0 2 4 6 8 12 10 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4.5 QT 4 3.5 3 2.5 Q1 2 1.5 1 ID = −3.3 A TJ = 25°C 0.5 0 0 Figure 7. Capacitance Variation 2 8 4 6 Qg, TOTAL GATE CHARGE (nC) 10 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge 10000 −IS, SOURCE CURRENT (AMPS) 4 tf td(off) t, TIME (ns) Q2 tr 1000 td(on) VDD = −6.0 V ID = −1.0 A VGS = −4.5 V 100 1 10 VGS = 0 V TJ = 25°C 3 2 1 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJS3151P ORDERING INFORMATION Device NTJS3151PT1 NTJS3151PT1G NTJS3151PT2 NTJS3151PT2G Package Shipping† SC−88 3000 Tape & Reel SC−88 (Pb−Free) 3000 Tape & Reel SC−88 3000 Tape & Reel SC−88 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJS3151P PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN A3 6 5 4 HE C −E− 1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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