ADPOW APTGS25X120RTP2 Input rectifier bridge brake 3 phase bridge npt igbt power module Datasheet

APTGS25X120RTP2
APTGS25X120BTP2
Input rectifier bridge +
Brake + 3 Phase Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
•
•
•
•
APTGS25X120RTP2: Without Brake (Pin 7 & 14 not connected)
20 19
Benefits
•
•
•
•
•
•
•
•
14 13 12 11 10
18 17 16 15
21
22
9
8
23
7
24
1
2
3
4
5
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
6
Symbol
VRRM
ID
IFSM
Parameter
Repetitive Peak Reverse Voltage
DC Forward Current
Surge Forward Current
tp = 10ms
TC = 80°C
Tj = 25°C
Tj = 150°C
Max ratings
1600
25
300
230
Unit
V
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4
APTGS25X120BTP2 – Rev 0
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
July, 2003
All ratings @ Tj = 25°C unless otherwise specified
APTGS25X120RTP2
APTGS25X120BTP2
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
IF
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
IGBT & Diode Inverter
Symbol
VCES
IC
ICM
VGE
PD
SCSOA
IF
IFSM
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TC = 80°C
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
IR
Reverse Current
VF
Forward Voltage
RthJC
Junction to Case
tp = 1ms
TC = 25°C
Tj = 125°C
TC = 80°C
TC = 80°C
Test Conditions
VR = 1600V
Tj = 150°C
Tj = 25°C
IF = 30A
Tj = 150°C
IF = 25A
IGBT Brake & Diode (only for APTGS25X120BTP2) Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Cies
Input Capacitance
VF
Forward Voltage
RthJC
Junction to Case
VGE = 0V
VCE = 1200V
Max ratings
1200
20
12.5
25
±20
100
25
Unit
V
Max ratings
1200
45
25
50
±20
230
160A @ 720V
25
50
Unit
V
Min
2
1.3
1.05
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 12.5A
Tj = 125°C
VGE = VCE , IC = 0.35 mA
VGE = 20V, VCE = 0V
VGE = 0V, VCE = 25V
f = 1MHz
VGE = 0V
Tj = 25°C
IF = 25A
Tj = 125°C
IGBT
Diode
APT website – http://www.advancedpower.com
Typ
Max
V
W
A
A
V
W
A
Unit
mA
1.5
1.1
1
°C/W
Typ
Max
Unit
0.5
500
µA
0.8
4.5
A
2.7
3.1
5.5
mA
3.15
6.5
300
600
2.05
1.9
V
V
V
nA
July, 2003
Symbol
VCES
pF
2.4
1.2
1.2
V
°C/W
2-4
APTGS25X120BTP2 – Rev 0
IGBT & Diode Brake (only for APTGS25X120BTP2) Absolute maximum ratings
APTGS25X120RTP2
APTGS25X120BTP2
IGBT & Diode Inverter Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Cies
Input Capacitance
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Eoff
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
VF
Forward Voltage
Qrr
Reverse Recovery Charge
RthJC
VGE = 0V
IF = 25A
IF = 25A
VR = 600V
di/dt=800A/µs
Min
Typ
Max
1.5
2
2.1
2.45
5.5
500
1200
4.5
RT =
R25
exp B25 / 50
1 1
−
T25 T
V
nA
ns
290
60
45
45
340
80
3.2
2.05
1.9
ns
mJ
2.5
2.1
Tj = 125°C
Symbol Characteristic
R25
Resistance @ 25°C
B 25/50 T25 = 298.16 K
V
pF
45
45
Tj = 25°C
Tj = 125°C
Tj = 25°C
Temperature sensor NTC
6.5
300
1500
V
µC
4.5
IGBT
Diode
Junction to Case
2.55
Unit
V
µA
mA
0.55
1.2
°C/W
Min
Typ
5
3375
Max
Unit
kΩ
K
Min
Typ
Max
Unit
T: Thermistor temperature
RT: Thermistor value at T
3. Thermal and package characteristics
Symbol Characteristic
RMS Isolation Voltage, any terminal to case t =1 min,
VISOL
I isol<1mA, 50/60Hz
TJ
Operating junction temperature range
TSTG
Storage Temperature Range
TC
Operating Case Temperature
To Heatsink
Torque Mounting torque
Wt
Package Weight
2500
M5
APT website – http://www.advancedpower.com
-40
-40
-40
V
150
125
125
3.3
185
July, 2003
ICES
Test Conditions
VGE = 0V, IC = 500µA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 25A
RG = 27Ω
°C
N.m
g
3-4
APTGS25X120BTP2 – Rev 0
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
APTGS25X120RTP2
APTGS25X120BTP2
4. Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
4-4
APTGS25X120BTP2 – Rev 0
July, 2003
PIN 24
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