Infineon BSC0993ND Optimostm power-mosfet, 30 v Datasheet

BSC0993ND
MOSFET
OptiMOSTMPower-MOSFET,30V
Powerstage5x6
Features
•DualN-channelOptiMOS™MOSFET
•Optimizedforcleanswitching
•100%avalanchetested
•Superiorthermalresistance
•Optimizedforwirelesscharger
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
5
mΩ
ID
17
A
QOSS
8.6
nC
QG(0V..4.5V)
6.7
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSC0993ND
PG-TISON-8
0993ND
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
1Maximumratings
atTA=25°C,unlessotherwisespecified,onetransistoractive
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
17
10
A
VGS=10V,TA=25°C
VGS=10V,TA=100°C
-
68
A
TA=25°C
-
-
14
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
2.5
W
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
4.2
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
See Diagram 3 for more detailed information.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.0
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
5.6
4.2
7
5
mΩ
VGS=4.5V,ID=7A
VGS=10V,ID=7A
Gate resistance1)
RG
1.3
2.6
5.2
Ω
-
Transconductance
gfs
24
48
-
S
|VDS|>2|ID|RDS(on)max,ID=11A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
30
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
870
1200
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
330
440
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
49
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
3.6
-
ns
VDD=15V,VGS=10V,ID=7A,
RG,ext=1.6Ω
Rise time
tr
-
3.8
-
ns
VDD=15V,VGS=10V,ID=7A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
17
-
ns
VDD=15V,VGS=10V,ID=7A,
RG,ext=1.6Ω
Fall time
tf
-
3.0
-
ns
VDD=15V,VGS=10V,ID=7A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
2.1
-
nC
VDD=15V,ID=7A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
1.4
-
nC
VDD=15V,ID=7A,VGS=0to4.5V
Gate to drain charge
Qgd
-
2.0
-
nC
VDD=15V,ID=7A,VGS=0to4.5V
Switching charge
Qsw
-
2.7
-
nC
VDD=15V,ID=7A,VGS=0to4.5V
Gate charge total
Qg
-
6.7
-
nC
VDD=15V,ID=7A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=15V,ID=7A,VGS=0to4.5V
Gate charge total
Qg
-
13
18
nC
VDD=15V,ID=7A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
5.4
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
8.6
11
nC
VDD=15V,VGS=0V
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
2.5
A
TA=25°C
-
68
A
TA=25°C
-
0.76
1.1
V
VGS=0V,IF=2.5A,Tj=25°C
-
5
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
3
20
15
ID[A]
Ptot[W]
2
10
1
5
0
0
40
80
120
0
160
0
40
80
TA[°C]
120
160
TA[°C]
Ptot=f(TA)
ID=f(TA);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
102
10
102
0.5
1 µs
101
10 µs
101
0.2
0.1
100 µs
0.05
ZthJA[K/W]
ID[A]
1 ms
10 ms
100
DC
0.02
100
0.01
single pulse
-1
10
10-1
10-2
10-3
10-1
100
101
102
10-2
10-5
10-4
10-3
10-2
VDS[V]
100
101
102
103
tp[s]
ID=f(VDS);TA=25°C;D=0;parameter:tp
Final Data Sheet
10-1
ZthJA=f(tp);parameter:D=tp/T
6
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
250
10
10 V
200
8V 5V
8
4.5 V
3.3 V
ID[A]
RDS(on)[mΩ]
150
100
6
4.5 V
5V
8V
4
10 V
3.3 V
50
0
2
0
1
2
0
3
0
5
10
VDS[V]
15
20
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
250
160
200
120
ID[A]
gfs[S]
150
80
100
40
50
150 °C
0
0
1
25 °C
2
3
4
5
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
7
2.5
6
2.0
5
typ
1.5
VGS(th)[V]
RDS(on)[mΩ]
4
3
1.0
2
0.5
1
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=7A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
102
Ciss
103
IF[A]
C[pF]
Coss
101
102
Crss
101
0
5
10
15
100
20
25
10-1
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
10
15 V
6V
24 V
VGS[V]
IAV[A]
8
25 °C
101
100 °C
125 °C
6
4
2
100
100
101
102
103
0
0
tAV[µs]
4
8
12
16
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=7Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
5PackageOutlines
Figure1OutlinePG-TISON-8,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSC0993ND
RevisionHistory
BSC0993ND
Revision:2016-07-11,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-07-11
Release of final version
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Final Data Sheet
11
Rev.2.0,2016-07-11
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