MOTOROLA Order this document by MAC218FP/D SEMICONDUCTOR TECHNICAL DATA MAC218FP Series MAC218AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • • • • Blocking Voltage to 800 Volts Glass Passivated Junctions for Greater Parameter Uniformity and Stability Isolated TO-220 Type Package for Ease of Mounting Gate Triggering in Three Modes (MAC218FP Series) or Four Modes (MAC218AFP Series) MT2 ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS MT1 G CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C) (1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP MAC218-6FP, MAC218A6FP MAC218-8FP, MAC218A8FP MAC218-10FP, MAC218A10FP On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, preceded and followed by rated current, TC = 80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width = 1 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) Value VDRM Unit Volts 200 400 600 800 IT(RMS) 8 Amps ITSM 100 Amps I2t 40 A2s PGM 16 Watts PG(AV) 0.35 Watt IGM 4 Amps V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Operating Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS Characteristic 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Off-State Current (Either Direction) (VD = Rated VDRM @ TJ = 125°C, Gate Open ) Peak On-State Voltage (Either Direction) (ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%) Symbol Min Typ Max Unit IDRM — — 2 mA VTM — 1.7 2 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ω) Trigger Mode MT2(+), G(+) ; MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT — — — — Holding Current (Either Direction) (VD = 24 Vdc, Gate Open, Initiating Current = 200 mA) Critical Rate of Rise of Commutating Off-State Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) P D(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TJ = 125°C) 125 115 105 95 85 75 0 1 2 3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. Current Derating 2 7 8 mA — — — — 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — IH — — 50 mA dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 2. Power Dissipation Motorola Thyristor Device Data VGT , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS) 5 OFF-STATE VOLTAGE = 12 V 3 2 1 1 2 0.7 QUADRANT 3 4 0.5 –60 –40 –20 0 20 40 60 80 100 120 140 1.8 OFF-STATE VOLTAGE = 12 V 1.6 1.4 QUADRANT 4 1.2 1 0.8 0.6 1 QUADRANTS 2 3 0.4 –60 –40 –20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Normalized Gate Trigger Current Figure 4. Normalized Gate Trigger Voltage I H , NORMALIZED HOLDING CURRENT (mA) IGT, NORMALIZED GATE TRIGGER CURRENT (mA) TYPICAL CHARACTERISTICS 140 2 GATE OPEN MAIN TERMINAL #1 POSITIVE 1 0.7 0.5 MAIN TERMINAL #2 POSITIVE 0.3 0.2 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Normalized Holding Current Motorola Thyristor Device Data 3 PACKAGE DIMENSIONS SEATING PLANE –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC218FP/D* MAC218FP/D