isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD744A DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Collector Power Dissipation: PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD743A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A Base Current-Continuous -5 A Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 90 Junction Temperature 150 ℃ -65~150 ℃ IB B PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD744A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -5A -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.0 V VBE(on)-2 Base-Emitter On Voltage IC= -15A ; VCE= -4V -3.0 V VCB= -70V; IE= 0 -0.1 ICBO Collector Cutoff Current -60 UNIT V B mA VCB= -70V; IE= 0; TC= 125℃ -5.0 ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 20 hFE-3 DC Current Gain IC= -15A ; VCE= -4V 5 B 150 Switching Times td Delay Time tr Rise Time ts Storage Time tf Fall time isc Website：www.iscsemi.cn IC= -5A; IB1= -IB2= -5A; VBE(off)= 4.2V; RL= 6Ω; tp= 20μs,DutyCycle≤ 2% 2 20 ns 120 ns 600 ns 300 ns