LM611
Operational Amplifier and Adjustable Reference
General Description
Features
The LM611 consists of a single-supply op-amp and a programmable voltage reference in one space saving 8-pin
package. The op-amp out-performs most single-supply
op-amps by providing higher speed and bandwidth along
with low supply current. This device was specifically designed to lower cost and board space requirements in transducer, test, measurement and data acquisition systems.
Combining a stable voltage reference with a wide output
swing op-amp makes the LM611 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-mode signals are common. The voltage reference consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from
1.2V to 6.3V via two external resistors. The voltage reference is very stable even when driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.
As a member of National’s Super-Block™ family, the LM611
is a space-saving monolithic alternative to a multi-chip solution, offering a high level of integration without sacrificing
performance.
OP AMP
n Low operating current: 300 µA (op amp)
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V− to (V+−1.8V)
n Wide differential input voltage: ± 36V
n Available in low cost 8-pin DIP
n Available in plastic package rated for Military
Temperature Range Operation
REFERENCE
n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available: ± 0.6%
n Wide operating current range: 17 µA to 20 mA
n Reference floats above ground
n Tolerant of load capacitance
Applications
n
n
n
n
Transducer bridge driver
Process and Mass Flow Control systems
Power supply voltage monitor
Buffered voltage references for A/D’s
Connection Diagrams
DS009221-1
DS009221-2
Super-Block™ is a trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation
DS009221
www.national.com
LM611 Operational Amplifier and Adjustable Reference
May 1998
Absolute Maximum Ratings (Note 1)
Thermal Resistance, Junction-to-Ambient (Note 3)
N Package
100˚C/W
M Package
150˚C/W
Soldering Information Soldering (10 seconds)
N Package
260˚C
M Package
220˚C
± 1 kV
ESD Tolerance (Note 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pins Except VR
(referred to V− pin)
(Note 2)
Current through Any Input Pin and
VR Pin
Differential Input Voltage
Military and Industrial
Commercial
Storage Temperature Range
Maximum Junction Temperature
36V (Max)
−0.3V (Min)
Operating Temperature Range
± 20 mA
−40˚C≤TJ≤+85˚C
−55˚C≤TJ≤+125˚C
0˚C≤TJ≤70˚C
LM611AI, LM611I, LM611BI
LM611AM, LM611M
LM611C
± 36V
± 32V
−65˚C≤TJ≤+150˚C
150˚C
Electrical Characteristics
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM611M
LM611AM
Symbol
Parameter
Conditions
LM611BI
Typical
LM611AI
LM611I
(Note 5)
Limits
LM611C
(Note 6)
Units
Limits
(Note 6)
IS
VS
Total Supply Current
RLOAD = ∞,
210
300
350
µA max
4V ≤ V+ ≤ 36V (32V for LM611C)
221
320
370
µA max
2.2
2.8
2.8
V min
2.9
3
3
V min
46
36
32
V max
43
36
32
V max
Supply Voltage Range
OPERATIONAL AMPLIFIER
VOS1
VOS2
VOS Over Supply
4V ≤ V+ ≤ 36V
1.5
3.5
5.0
mV max
2.0
6.0
7.0
mV max
VOS Over VCM
(4V ≤ V+ ≤ 32V for LM611C)
VCM = 0V through VCM =
1.0
3.5
5.0
mV max
1.5
6.0
7.0
mV max
(V+ − 1.8V), V+ = 30V, V− = 0V
Average VOS Drift
(Note 6)
µV/˚C
15
max
IB
Input Bias Current
10
25
35
nA max
11
30
40
nA max
IOS
Input Offset Current
0.2
4
4
nA max
0.3
5
5
nA max
Average Offset Drift
Current
RIN
Input Resistance
CIN
Input Capacitance
en
Voltage Noise
In
Current Noise
CMRR
Common-Mode
Rejection-Ratio
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4
pA/˚C
Differential
1800
MΩ
Common-Mode
3800
MΩ
5.7
pF
Common-Mode
f = 100 Hz,
Input Referred
f = 100 Hz,
Input Referred
V+ = 30V, 0V ≤ VCM ≤ (V+ − 1.8V)
CMRR = 20 log (∆VCM/∆VOS)
2
74
58
95
80
75
dB min
90
75
70
dB min
Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM611M
LM611AM
Symbol
Parameter
Conditions
LM611BI
Typical
LM611AI
LM611I
(Note 5)
Limits
LM611C
(Note 6)
Units
Limits
(Note 6)
OPERATIONAL AMPLIFIER
PSRR
Power Supply
Rejection-Ratio
AV
Open Loop
4V ≤ V+ ≤ 30V, VCM = V+/2,
PSRR = 20 log (∆V+/∆VOS)
RL = 10 kΩ to GND, V+ = 30V,
SR
Slew Rate
5V ≤ VOUT ≤ 25V
V+ = 30V (Note 7)
GBW
Gain Bandwidth
CL = 50 pF
Voltage Gain
110
80
75
dB min
100
75
70
dB min
500
100
94
V/mV
50
40
40
min
0.70
0.55
0.50
V/µs
0.65
0.45
0.45
0.80
MHz
0.50
VO1
Output Voltage
Swing High
VO2
Output Voltage
Swing Low
IOUT
Output Source
Current
ISINK
Output Sink
Current
ISHORT
Short Circuit Current
RL = 10 kΩ to GND
V+ = 36V (32V for LM611C)
RL = 10 kΩ to V+
V+ = 36V (32V for LM611C)
V+ − 1.4
V+ − 1.7
V+ − 1.8
V min
V+ − 1.6
V+ − 1.9
V+ − 1.9
V min
V− + 0.8
V− + 0.9
V− + 0.95
V max
−
−
V + 0.9
V + 1.0
V− + 1.0
V max
VOUT = 2.5V, V+IN = 0V,
V−IN = −0.3V
25
20
16
mA min
15
13
13
mA min
VOUT = 1.6V, V+IN = 0V,
V−IN = 0.3V
17
14
13
mA min
9
8
8
mA min
VOUT = 0V, V+IN = 3V,
V−IN = 2V, Source
30
50
50
mA max
40
60
60
mA max
VOUT = 5V, V+IN = 2V,
V−IN = 3V, Sink
30
60
70
mA max
32
80
90
mA max
1.244
1.2365
1.2191
V min
1.2515
1.2689
V max
( ± 0.6%)
( ± 2.0%)
80
150
VOLTAGE REFERENCE
VR
Reference Voltage
(Note 8)
Average Temperature
Drift
(Note 9)
Hysteresis
Hyst = (Vro' − Vro)/∆TJ (Note 10)
VR Change
10
VR(100 µA) − VR(17 µA)
Resistance
µV/˚C
0.05
1
1
0.1
1.1
1.1
mV max
VR(10 mA) − VR(100 µA)
1.5
5
5
mV max
mV max
with Current
R
3.2
PPM/˚C
max
mV max
(Note 11)
2.0
5.5
5.5
∆VR(10→0.1 mA)/9.9 mA
0.2
0.56
0.56
Ω max
∆VR(100→17 µA)/83 µA
0.6
13
13
Ω max
VR Change with
VR(Vro
2.5
7
7
mV max
High VRO
(5.06V between Anode and
FEEDBACK)
2.8
10
10
mV max
VR Change with
VR(V+ = 5V) − VR(V+ = 36V)
(V+ = 32V for LM611C)
0.1
1.2
1.2
mV max
0.1
1.3
1.3
mV max
VR(V+
0.01
1
1
mV max
0.01
1.5
1.5
mV max
V+ Change
= Vr)
= 5V)
− VR(Vro
− VR(V+
= 6.3V)
= 3V)
3
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Electrical Characteristics
(Continued)
These specifications apply for V− = GND = 0V, V+ = 5V, VCM = VOUT = 2.5V, IR = 100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for TJ = 25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM611M
LM611AM
Symbol
Parameter
Conditions
LM611BI
Typical
LM611AI
LM611I
(Note 5)
Limits
LM611C
(Note 6)
Units
Limits
(Note 6)
VOLTAGE REFERENCE
VR Change with
VANODE Change
IFB
FEEDBACK Bias
V+ = V+ max, ∆VR = VR
(@ VANODE = V− = GND) − VR
( @ VANODE = V+ − 1.0V)
0.7
1.5
1.6
mV max
3.3
3.0
3.0
mV max
IFB; VANODE ≤ VFB ≤ 5.06V
22
35
50
nA max
29
40
55
nA max
Current
en
VR Noise
10 Hz to 10,000 Hz, VRO = VR
30
µVRMS
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 3: Junction temperature may be calculated using TJ = TA + PD θJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages
soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θJA is 90˚C/W for the N package and 135˚C/W for the M package.
Note 4: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 5: Typical values in standard typeface are for TJ = 25˚C; values in boldface type apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type).
Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage
transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.
Note 8: VR is the cathode-feedback voltage, nominally 1.244V.
Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
106 • ∆VR/(VR[25˚C] • ∆TJ), where ∆VR is the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJ is the temperature range. This parameter
is guaranteed by design and sample testing.
Note 10: Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 11: Low contact resistance is required for accurate measurement.
Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.
Simplified Schematic Diagrams
Op Amp
DS009221-3
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4
Simplified Schematic Diagrams
(Continued)
Reference
Bias
DS009221-92
DS009221-91
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V− =
0V, unless otherwise noted
Reference Voltage vs Temp
on 5 Representative Units
Accelerated Reference
Voltage Drift vs Time
Reference Voltage Drift
DS009221-34
DS009221-33
Reference Voltage vs
Current and Temperature
DS009221-35
Reference Voltage vs
Current and Temperature
DS009221-36
Reference Voltage vs
Reference Current
DS009221-37
5
DS009221-38
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Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Voltage vs
Reference Current
Reference AC
Stability Range
Feedback Current vs
Feedback-to-Anode Voltage
DS009221-39
Feedback Current vs
Feedback-to-Anode Voltage
Reference Noise Voltage
vs Frequency
DS009221-42
Reference Power-Up Time
DS009221-41
DS009221-40
Reference Small-Signal
Resistance vs Frequency
DS009221-43
Reference Voltage with
Feedback Voltage Step
DS009221-44
Reference Voltage with
100z12 µA Current Step
DS009221-45
DS009221-46
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6
DS009221-47
Typical Performance Characteristics (Reference)
TJ = 25˚C, FEEDBACK pin shorted to V−
= 0V, unless otherwise noted (Continued)
Reference Step Response
for 100 µA z 10 mA
Current Step
Reference Voltage Change
with Supply Voltage Step
DS009221-49
DS009221-48
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2, VOUT
= V+/2, TJ = 25˚C, unless otherwise noted
Input Common-Mode Voltage
Range vs Temperature
VOS vs Junction
Temperature
Input Bias Current vs
Common-Mode Voltage
DS009221-50
Reference Change vs
Common-Mode Voltage
DS009221-51
Large-Signal
Step Response
DS009221-52
Output Voltage Swing
vs Temp. and Current
DS009221-54
DS009221-53
7
DS009221-55
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Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Output Source Current vs
Output Voltage and Temp.
Output Sink Current vs
Output Voltage
DS009221-56
Output Impedance vs
Frequency and Gain
DS009221-57
Small Signal Pulse
Response vs Temp.
Op Amp Voltage Noise
vs Frequency
Op Amp Current Noise
vs Frequency
DS009221-62
DS009221-61
Small-Signal Voltage Gain vs
Frequency and Temperature
DS009221-63
8
DS009221-58
Small-Signal Pulse
Response vs Load
DS009221-60
DS009221-59
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Output Swing,
Large Signal
DS009221-64
Typical Performance Characteristics (Op Amps)
V+ = 5V, V− = GND = 0V, VCM = V+/2,
VOUT = V+/2, TJ = 25˚C, unless otherwise noted (Continued)
Small-Signal Voltage Gain
vs Frequency and Load
Follower Small-Signal
Frequency Response
DS009221-65
Power Supply Current vs
Power Supply Voltage
Common-Mode Input
Voltage Rejection Ratio
DS009221-66
Positive Power Supply
Voltage Rejection Ratio
Negative Power Supply
Voltage Rejection Ratio
DS009221-69
DS009221-68
Slew Rate vs Temperature
DS009221-67
Input Offset Current vs
Junction Temperature
DS009221-70
Input Bias Current vs
Junction Temperature
DS009221-71
DS009221-72
9
DS009221-73
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Typical Performance Distributions
Average VOS Drift
Military Temperature Range
Average VOS Drift
Industrial Temperature Range
DS009221-74
Average VOS Drift
Commercial Temperature
Range
DS009221-75
DS009221-76
Average IOS Drift
Military Temperature Range
Average IOS Drift
Industrial Temperature Range
DS009221-77
Voltage Reference Broad-Band
Noise Distribution
Average IOS Drift
Commercial Temperature Range
DS009221-78
Op Amp Voltage
Noise Distribution
DS009221-80
DS009221-79
Op Amp Current
Noise Distribution
DS009221-81
DS009221-82
Application Information
VOLTAGE REFERENCE
Reference Biasing
The voltage reference is of a shunt regulator topology that
models as a simple zener diode. With current Ir flowing in the
‘forward’ direction there is the familiar diode transfer function. Ir flowing in the reverse direction forces the reference
voltage to be developed from cathode to anode. The applied
voltage to the cathode may range from a diode drop below
V− to the reference voltage or to the avalanche voltage of the
parallel protection diode, nominally 7V. A 6.3V reference with
V+ = 3V is allowed.
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DS009221-14
FIGURE 1. Voltages Associated with Reference
(Current Source Ir is External)
10
Application Information
(Continued)
The reference equivalent circuit reveals how Vr is held at the
constant 1.2V by feedback, and how the FEEDBACK pin
passes little current.
To generate the required reverse current, typically a resistor
is connected from a supply voltage higher than the reference
voltage. Varying that voltage, and so varying Ir, has small effect with the equivalent series resistance of less than an ohm
at the higher currents. Alternatively, an active current source,
such as the LM134 series, may generate Ir.
DS009221-17
FIGURE 4. Thevenin Equivalent of
Reference with 5V Output
DS009221-15
FIGURE 2. Reference Equivalent Circuit
DS009221-18
R1 = Vr/I = 1.24/32µ = 39k
R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k
FIGURE 5. Resistors R1 and R2 Program
Reference Output Voltage to be 5V
Understanding that Vr is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK pin, a
range of Vr temperature coefficients may be synthesized.
DS009221-16
FIGURE 3. 1.2V Reference
Capacitors in parallel with the reference are allowed. See the
Reference AC Stability Range curve for capacitance
values — from 20 µA to 3 mA any capacitor value is stable.
With the reference’s wide stability range with resistive and
capacitive loads, a wide range of RC filter values will perform
noise filtering.
Adjustable Reference
The FEEDBACK pin allows the reference output voltage,
Vro, to vary from 1.24V to 6.3V. The reference attempts to
hold Vr at 1.24V. If Vr is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode,
then Vro = Vr = 1.24V. For higher voltages FEEDBACK is
held at a constant voltage above Anode — say 3.76V for Vro
= 5V. Connecting a resistor across the constant Vr generates
a current I = R1/Vr flowing from Cathode into FEEDBACK
node. A Thevenin equivalent 3.76V is generated from FEEDBACK to Anode with R2 = 3.76/I. Keep I greater than one
thousand times larger than FEEDBACK bias current for
< 0.1% error — I≥32 µA for the military grade over the military
temperature range (I≥5.5 µA for a 1% untrimmed error for a
commercial part.)
DS009221-19
FIGURE 6. Output Voltage has Negative Temperature
Coefficient (TC) if R2 has Negative TC
DS009221-20
FIGURE 7. Output Voltage has Positive TC
if R1 has Negative TC
11
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Application Information
(Continued)
DS009221-24
FIGURE 11. Negative −TC Current Source
DS009221-21
Hysteresis
The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products
vary — always check the data sheet for any given device. Do
not assume that no specification means no hysteresis.
FIGURE 8. Diode in Series with R1 Causes
Voltage Across R1 and R2 to be Proportional
to Absolute Temperature (PTAT)
Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be synthesized.
OPERATIONAL AMPLIFIER
The amp or the reference may be biased in any way with no
effect on the other, except when a substrate diode conducts
(see Guaranteed Electrical Characteristics Note 1). The amp
may have inputs outside the common-mode range, may be
operated as a comparator, or have all terminals floating with
no effect on the reference (tying inverting input to output and
non-inverting input to V− on unused amp is preferred).
Choosing operating points that cause oscillation, such as
driving too large a capacitive load, is best avoided.
Op Amp Output Stage
The op amp, like the LM124 series, has a flexible and relatively wide-swing output stage. There are simple rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability:
1. Output Swing: Unloaded, the 42 µA pull-down will bring
the output within 300 mV of V− over the military temperature range. If more than 42 µA is required, a resistor from
output to V− will help. Swing across any load may be improved slightly if the load can be tied to V+, at the cost of
poorer sinking open-loop voltage gain.
2. Cross-over Distortion: The LM611 has lower cross-over
distortion (a 1 VBE deadband versus 3 VBE for the
LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will force
class-A operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion.
3. Capacitive Drive: Limited by the output pole caused by
the output resistance driving capacitive loads, a
pull-down resistor conducting 1 mA or more reduces the
output stage NPN re until the output resistance is that of
the current limit 25Ω. 200 pF may then be driven without
oscillation.
DS009221-22
I = Vr/R1 = 1.24/R1
FIGURE 9. Current Source is Programmed by R1
DS009221-23
FIGURE 10. Proportional-to-AbsoluteTemperature Current Source
Op Amp Input Stage
The lateral PNP input transistors, unlike those of most op
amps, have BVEBO equal to the absolute maximum supply
voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the inputs
look like high impedances to input sources producing large
differential and common-mode voltages.
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12
Typical Applications
DS009221-28
*10k must be low
t.c. trim pot.
DS009221-30
FIGURE 13. Simple Low Quiescent Drain Voltage
Regulator. Total Supply Current is approximately
320 µA when VIN = 5V, and output has no load.
FIGURE 12. Ultra Low Noise 10.00V Reference.
Total Output Noise is Typically 14 µVRMS.
Adjust the 10k pot for 10.000V.
DS009221-29
VOUT = (R1/R2 + 1) VREF.
R1, R2 should be 1% metal film.
R3 should be low t.c. trim pot.
FIGURE 14. Slow Rise-Time Upon Power-Up,
Adjustable Transducer Bridge Driver.
Rise-time is approximately 0.5 ms.
DS009221-31
FIGURE 15. Low Drop-Out Voltage Regulator Circuit. Drop out voltage is typically 0.2V.
13
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Typical Applications
(Continued)
DS009221-32
FIGURE 16. Nulling Bridge Detection System. Adjust sensitivity via 400 kΩ pot.
Null offset with R1, and bridge drive with the 10k pot.
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14
Ordering Information
Reference
Tolerance & VOS
± 0.6% @
80 ppm/˚C max
VOS = 3.5 mV max
Temperature Range
Military
Industrial
Commercial
−55˚C≤TA≤+125˚C
−40˚C≤TA≤+85˚C
0˚C≤TA≤+70˚C
LM611AMN
LM611AIN
—
Package
NSC
Drawing
8-pin
N08E
molded DIP
LM611AMJ/883 (Note 12)
—
—
8-pin
J08A
ceramic DIP
± 2.0% @
150 ppm/˚C max
VOS = 5 mV max
LM611MN
LM611BIN
LM611CN
8-pin
N08E
molded DIP
—
LM611IM
LM611CM
14-pin Narrow
M14A
Surface Mount
15
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Physical Dimensions
inches (millimeters) unless otherwise noted
Hermetic Dual-In-Line Package (J)
Order Number LM611AMJ/883
NS Package Number J08A
Plastic Surface Mount Narrow Package (0.15) (M)
Order Number LM611CM or LM611IM
NS Package Number M14A
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16
LM611 Operational Amplifier and Adjustable Reference
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Plastic Dual-In-Line Package (N)
Order Number LM611CN, LM611AIN, LM611BIN, LM611AMN or LM611MN
NS Package Number N08E
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2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.