PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard TO-262 package VCES = 1200V VCE(on) typ. = 3.17V G @VGE = 15V, IC = 5.0A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible TO-262 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C I CM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 2.1 ––– 40 ––– Units °C/W g (oz) 1 8/17/00 IRG4BH20K-L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — 3.17 VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — 2.84 VGE(th) Gate Threshold Voltage 3.5 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 gfe Forward Transconductance 2.3 3.5 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V — IC = 11A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA — S VCE = 100 V, IC = 5.0A 250 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 23 — 26 — TJ = 25°C ns 93 140 IC =5.0A, VCC = 960V 270 400 VGE = 15V, RG = 50Ω 0.45 — Energy losses include "tail" 0.44 — mJ See Fig. 9,10,14 0.89 1.2 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω 23 — TJ = 150°C, 28 — IC = 5.0A, VCC = 960V ns 100 — VGE = 15V, RG = 50Ω 620 — Energy losses include "tail" 1.7 — mJ See Fig. 10,11,14 7.5 — nH Measured 5mm from package 435 — VGE = 0V 44 — pF VCC = 30V See Fig. 7 8.3 — ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by Repetitive rating; pulse width limited by maximum VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω, Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) junction temperature. (See fig. 13a) Pulse width 5.0µs, single shot. * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRG4BH20K-L 16 F or both: 12 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125˚ C T sink = 90˚ C Gate drive as specified Clamp voltage: 80% of rated Power Dissipation = 15W Sq uare wav e: 60% of rated voltage 8 4 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) 10 TJ = 150 °C 1 TJ = 25 ° C V GE = 15V 20µs PULSE WIDTH 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 10 TJ = 150 ° C TJ = 25 ° C V CC = 50V 5µs PULSE WIDTH 1 6 8 10 12 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BH20K-L 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 12 9 6 3 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 10 A 4.0 IC = 3.0 5A IC = 2.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 °( )C) TTJJ ,, Junction Temperature Junction Temperature ( °C TC , Case Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BH20K-L VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc C, Capacitance (pF) 600 Cies 400 200 Coes 20 VGE , Gate-to-Emitter Voltage (V) 800 VCC = 400V I C = 11A 16 12 8 4 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 = 960V = 15V = 25 ° C = 11A 0.85 0.80 0.75 0.70 0 10 20 30 40 RG R,GGate , GateResistance Resistance ((Ohm) Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ 0.90 I C 10 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.95 5 50 Ω RG = 50Ohm VGE = 15V VCC = 960V IC = 10 A IC = 1 5A IC = 2.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 °( C Junction Temperature ( °C ) ) TTJJ, ,Junction Temperature Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BH20K-L RG TJ VCC 4.0 VGE 100 Ω = 50Ohm = 150° C = 960V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 VGE = 20V T J = 125 o C 10 1.0 SAFE OPERATING AREA 1 0.0 0 2 4 6 8 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BH20K-L L D .U .T. VC * 50V RL = 0 - 960V 100 0V 960V 2 X IC@25°C 480µF 960V * D river sam e type as D .U .T .; Vc = 80% of Vce(m ax) * N ote: D ue to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 960V 90% 10% VC 90% Fig. 14b - Switching Loss t d (o ff) 10% I C 5% Waveforms tf tr t d (o n ) t=5µs E on E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BH20K-L TO-262 Package Details IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 8 www.irf.com