Clairex CLT335 Npn silicon phototransistor Datasheet

Clairex
®
CLT335

Technologies, Inc.
NPN Silicon Phototransistor
March, 2001
0.210 (5.33)
0.190 (4.83)
0.190 (4.83)
0.176 (4.47)
0.500 (12.7) min
0.215 (5.46)
0.205 (5.21)
COLLECTOR
0.158 (4.01)
0.136 (3.45)
BASE
N/C
EMITTER
0.100 (2.54) dia
0.025 (0.64)
max
0.060 (1.52)
max
0.147 (3.73)
0.137 (3.48)
0.019 (0.48)
0.016 (0.41)
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS)
Case 17
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature ....................................................................... -65°C to +150°C
• ±9° acceptance angle
operating temperature .................................................................... -65°C to +125°C
• custom aspheric lensed TO-18
lead soldering temperature(1) .......................................................................... 260°C
package
collector-emitter voltage...................................................................................... 30V
• transistor base is not bonded
50mA
• tested and characterized at 850nm continuous collector current .............................................................................
continuous power dissipation(2) ..................................................................... 250mW
• RoHS compliant
notes:
description
1. 0.06” (1.5mm) from the header for 5 seconds maximum
The CLT335 is a silicon NPN
2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C.
phototransistor mounted in a TO-18
package which features a custom
double convex glass-to-metal
sealed aspheric lens. Narrow
acceptance angle enables excellent
on-axis coupling. The CLT335 is
mechanically and spectrally matched
to Clairex's CLE335 LED. For
additional information, call Clairex.
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
IL
ICEO
parameter
min
typ
max
units
Light current(3)
1.0
2.5
-
mA
VCE=5V, Ee=0.5mW/cm2
-
-
25
nA
VCE=10V, Ee=0
30
-
-
V
IC=100µA
IC = 1mA, VCE=5V, RL=1kΩ.
Collector dark current
V(BR)CEO
Collector-emitter breakdown
tr, tf
Output rise and fall time
-
5.0
-
µs
θHP
Total angle at half sensitivity points
-
18
-
deg.
notes:
test conditions
3. Radiation source is an aluminum gallium arsenide IRED operating at a peak emission wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Revised 3/16/06
Plano, Texas 75074-8524
www.clairex.com
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