HANBit HMF1M32F2VC Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-MMC, 3.3V Design Part No. HMF1M32F2VC GENERAL DESCRIPTION The HMF1M32F2VC is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of two 1M x 16 FROM mounted on a 80-pin stackable type, single - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible. FEATURES PIN ASSIGNMENT P1 w Part Identification - HMF1M32F2VC : Socket 5mm w Access time: 70, 80, 90, 120ns w High-density 4MByte design w High-reliability, low-power design w Single + 3.0V ± 0.3V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w 80-pin Designed by P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 Vcc 21 Vcc 1 Vcc 21 Vcc 2 /CE 22 DQ15 2 DQ16 22 NC 3 NC 23 DQ7 3 DQ24 23 NC 4 NC 24 DQ14 4 DQ17 24 /BYTE 5 NC 25 DQ6 5 DQ25 25 /OE 6 /RY_BY 26 DQ13 6 DQ18 26 NC 7 Vss 27 Vss 7 Vss 27 Vss 8 /RESET 28 DQ5 8 DQ26 28 A16 9 /WE 29 DQ12 9 DQ19 29 A0 10 A19 30 DQ4 10 DQ27 30 A18 11 A8 31 DQ11 11 DQ20 31 A17 12 A9 32 DQ3 12 DQ28 32 A7 13 A10 33 DQ10 13 DQ21 33 A6 14 Vss 34 Vss 14 Vss 34 Vss 15 A11 35 DQ2 15 DQ29 35 A5 16 A12 36 DQ9 16 DQ22 36 A4 17 A13 37 DQ1 17 DQ30 37 A3 18 A14 38 DQ8 18 DQ23 38 A2 19 A15 39 DQ0 19 DQ31 39 A1 20 Vcc 40 Vcc 20 Vcc 40 Vcc 40-pin Fine Pitch Connector (x 2EA) w Minimum 1,000,000 write/erase cycle w Sector erases architecture OPTIONS MARKING w Timing 70ns access -70 80ns access -80 90ns access -90 120ns access -120 w Packages 80-pin SMM URL:www.hbe.co.kr REV.2.0 (October, 2002) F -1- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC FUNCTIONAL BLOCK DIAGRAM 32 DQ0- DQ31 20 A0 – A19 A0-19 /WE /OE DQ 0-15 U1 /CE RY-BY /Reset A0-19 URL:www.hbe.co.kr REV.2.0 (October, 2002) /WE /WE /OE /OE /CE /CE /RY_BY /RESET RY-BY /Reset -2- DQ 16-31 U2 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Load Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, V OUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL /CE = VIL, 5MHZ Vcc Active Read Current (1) V 0.45 1MHZ Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 Low Vcc Lock-Out Voltage VLKO V 18 32 4 8 40 60 mA 60 mA 2.5 V ICC1 /OE = VIH, Notes: 2.4 mA 2.3 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL:www.hbe.co.kr REV.2.0 (October, 2002) -3- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Sector Erase Time TYP. MAX. 0.7 15 - Chip Erase Time COMMENTS sec 25 Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time -70R -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE = V IL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 30 35 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Max 25 25 30 30 ns tAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 ns TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 90, 120 UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and full times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL:www.hbe.co.kr REV.2.0 (October, 2002) -4- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 35 50 ns Notes : 1 . This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.2.0 (October, 2002) -5- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD -70R -80 -90 120 tAVAV tWC Write Cycle Time Min 70 80 90 12 tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec 35 35 35 50 ns Notes : 1. This does not include the preprogramming time 2 . This timing is only for Sector Protect operations URL:www.hbe.co.kr REV.2.0 (October, 2002) -6- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC PACKAGE DIMENSIONS <TOP VIEW> <BOTTOM VIEW > 1.30 ± 0.2 Plug (memory) Receptacle (main board) URL:www.hbe.co.kr REV.2.0 (October, 2002) -7- HANBit Electronics Co., Ltd. HANBit HMF1M32F2VC ORDERING INFORMATION Part Number Density Org. Package HMF1M32F2VC-70 4MByte x 32 80Pin – SMM HMF1M32F2VC-80 4Mbyte x 32 HMF1M32F2VC-90 4Mbyte HMF1M32F2VC-120 4Mbyte URL:www.hbe.co.kr REV.2.0 (October, 2002) Component Vcc SPEED 2EA 3.3V 70ns 80Pin – SMM 2EA 3.3V 80ns x 32 80Pin – SMM 2EA 3.3V 90ns x 32 80Pin -SMM 2EA 3.3V 120ns -8- Number HANBit Electronics Co., Ltd.