Renesas H5N2901FN-E Silicon n channel mos fet high speed power switching Datasheet

H5N2901FN
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0372-0100Z
Rev.1.00
May.28.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-220FN
D
1. Gate
2. Drain
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, May.28.2004, page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
290
±30
18
72
18
72
6
2.1
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
H5N2901FN
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
290
—
—
3.0
10
—
Typ
—
—
—
—
18
0.070
Max
—
1
±0.1
4.0
—
0.091
Unit
V
µA
µA
V
S
Ω
Test conditions
ID = 10 mA, VGS = 0
VDS = 290 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9 A, VDS = 10 V Note4
ID = 9 A, VGS = 10 VNote4
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2200
300
38
35
60
110
45
56
13
26
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 230 V
VGS = 10 V
ID = 18 A
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
VDF
trr
Qrr
—
—
—
0.9
190
1.3
1.5
—
—
V
ns
µC
IF = 18 A, VGS = 0 Note4
IF = 18 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, May.28.2004, page 2 of 7
ID = 9 A
VGS = 10 V
RL = 16.1 Ω
Rg = 10 Ω
H5N2901FN
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
30
20
10
ID (A)
300
100
Drain Current
Channel Dissipation
Pch (W)
40
10
30
DC
50
100
Case Temperature
0
at
ion
m
s(
1s
(T
c=
1
0.3 Operation in
25
ho
t)
°C
)
this area is
0.1 limited by RDS(on)
150
200
Tc (°C)
Ta = 25°C
0.01
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
100
VDS = 10 V
Pulse Test
Pulse Test
8V
7V
60
6V
40
20
ID (A)
10 V
80
Drain Current
ID (A)
Op
er
3
10
10
µs
0
1m µ
s
=
s
1
0.03
0
Drain Current
PW
80
60
40
20
Tc = 75°C
VGS = 5 V
0
4
8
12
Drain to Source Voltage
0
16
20
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
5
Pulse Test
4
3
I D = 30 A
2
15 A
9A
1
0
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
25°C
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V
0.1
0.05
0.02
0.01
12
4
8
Gate to Source Voltage
Rev.1.00, May.28.2004, page 3 of 7
16
20
VGS (V)
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.400
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N2901FN
V GS = 10 V
0.320
0.240
I D = 30 A
0.160
15 A
0.080
9A
0
–40
0
40
80
120
Case Temperature Tc (°C)
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
V DS = 10 V
Pulse Test
0.5
0.2
0.2
160
0.5 1
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Reverse Recovery Time trr (ns)
50
20
10
0.1
VGS = 0
f = 1 MHz
2000
1000
500
Coss
200
100
50
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Crss
20
10
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
0
20
40
60
Drain to Source Voltage
V DS = 50 V
100 V
230 V
VGS
16
12
VDD
200
8
V DS = 230 V
100 V
50 V
20
40
Gate Charge
Rev.1.00, May.28.2004, page 4 of 7
60
80
Qg (nC)
4
0
100
80
100
VDS (V)
Switching Characteristics
10000
Switching Time t (ns)
I D = 30 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
0
ID (A)
50 100
Ciss
100
100
Drain Current
5000
200
300
10 20
10000
500
400
5
Typical Capacitance vs.
Drain to Source Voltage
1000
500
2
V GS = 10 V, V DD = 145 V
PW = 5 µs, duty < 1 %
R G =10 Ω
1000
tr
tf
t d(off)
100
tf
t d(on)
10
0.1
tr
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2901FN
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
V GS = 0 V
40
10 V
20
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
2.0
0
50
100
Case Temperature
VSD (V)
150
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
1
0.0
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
ho
tp
ul
se
0.01
PDM
1s
Normalized Transient Thermal Impedance γ s (t)
1
D=
0.003
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
Rev.1.00, May.28.2004, page 5 of 7
100 m
PW (s)
1
10
H5N2901FN
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 145 V
Vout
10%
10%
90%
td(on)
Rev.1.00, May.28.2004, page 6 of 7
tr
10%
90%
td(off)
tf
H5N2901FN
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
φ3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
3 ± 0.3
6.5 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
2.54 ± 0.25
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Ordering Information
Part Name
Quantity
Shipping Container
H5N2901FN-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, May.28.2004, page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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